NTMS5P02R2 Power MOSFET −5.4 Amps, −20 Volts P−Channel Enhancement−Mode Single SOIC−8 Package http://onsemi.com Features VDSS • High Density Power MOSFET with Ultra Low RDS(on) • • • • • • Providing Higher Efficiency Miniature SOIC−8 Surface Mount Package − Saves Board Space Diode Exhibits High Speed with Soft Recovery IDSS Specified at Elevated Temperature Drain−to−Source Avalanche Energy Specified Mounting Information for the SOIC−8 Package is Provided Pb−Free Package is Available −20 V RDS(ON) TYP ID MAX 26 mW @ −4.5 V −5.4 A Single P−Channel D G Applications • Power Management in Portable and Battery−Powered Products, i.e.: S Computers, Printers, PCMCIA Cards, Cellular & Cordless Telephones MARKING DIAGRAM & PIN ASSIGNMENT 8 1 8 D D E5P02x AYWW G G SOIC−8 CASE 751 STYLE 13 1 NC S E5P02 x A Y WW G D D S G = Specific Device Code = Blank or S = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device NTMS5P02R2 NTMS5P02R2G Package Shipping † SOIC−8 2500/Tape & Reel SOIC−8 (Pb−Free) 2500/Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D © Semiconductor Components Industries, LLC, 2006 March, 2006 − Rev. 2 1 Publication Order Number: NTMS5P02R2/D NTMS5P02R2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Drain−to−Gate Voltage (RGS = 1.0 mW) VDGR −20 V Gate−to−Source Voltage − Continuous VGS ±10 V Thermal Resistance − Junction−to−Ambient (Note 1) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4) RqJA PD ID ID PD ID IDM 50 2.5 −7.05 −5.62 1.2 −4.85 −28 °C/W W A A W A A Thermal Resistance − Junction−to−Ambient (Note 2) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4) RqJA PD ID ID PD ID IDM 85 1.47 −5.40 −4.30 0.7 −3.72 −20 °C/W W A A W A A Thermal Resistance − Junction−to−Ambient (Note 3) Total Power Dissipation @ TA = 25°C Continuous Drain Current @ 25°C Continuous Drain Current @ 70°C Maximum Operating Power Dissipation Maximum Operating Drain Current Pulsed Drain Current (Note 4) RqJA PD ID ID PD ID IDM 159 0.79 −3.95 −3.15 0.38 −2.75 −12 °C/W W A A W A A Operating and Storage Temperature Range TJ, Tstg −55 to +150 °C EAS 360 mJ TL 260 °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −5.0 Vdc, Peak IL = −8.5 Apk, L = 10 mH, RG = 25 W) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t ≤ 10 seconds. 2. Mounted onto a 2″ square FR−4 Board (1″ sq. 2 oz Cu 0.06″ thick single sided), t = steady state. 3. Minimum FR−4 or G−10 PCB, t = Steady State. 4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%. http://onsemi.com 2 NTMS5P02R2 ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) (Note 5) Characteristic Symbol Min Typ Max Unit −20 − − −15 − − − − − − − −0.2 −1.0 −10 − − − −100 − − 100 −0.65 − −0.9 2.9 −1.25 − − − 0.026 0.037 0.033 0.048 gFS − 15 − Mhos Ciss − 1375 1900 pF Coss − 510 900 Crss − 200 380 td(on) − 18 35 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = −250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = −16 Vdc, VGS = 0 Vdc, TJ = 25°C) (VDS = −16 Vdc, VGS = 0 Vdc, TJ = 125°C) (VDS = −20 Vdc, VGS = 0 Vdc, TJ = 25°C) IDSS Gate−Body Leakage Current (VGS = −10 Vdc, VDS = 0 Vdc) IGSS Gate−Body Leakage Current (VGS = +10 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc nAdc ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−State Resistance (VGS = −4.5 Vdc, ID = −5.4 Adc) (VGS = −2.5 Vdc, ID = −2.7 Adc) RDS(on) Forward Transconductance (VDS = −9.0 Vdc, ID = −5.4 Adc) Vdc mV/°C W DYNAMIC CHARACTERISTICS Input Capacitance (VDS = −16 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Notes 6 & 7) Turn−On Delay Time (VDD = −16 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, RG = 6.0 W) Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time (VDD = −16 Vdc, ID = −5.4 Adc, VGS = −4.5 Vdc, RG = 6.0 W) Rise Time Turn−Off Delay Time Fall Time Total Gate Charge (VDS = −16 Vdc, VGS = −4.5 Vdc, ID = −5.4 Adc) Gate−Source Charge Gate−Drain Charge ns tr − 25 50 td(off) − 70 125 tf − 55 100 td(on) − 22 − tr − 70 − td(off) − 65 − tf − 90 − Qtot − 20 35 Qgs − 4.0 − Qgd − 7.0 − VSD − − −0.95 −0.72 −1.25 − Vdc trr − 40 75 ns ta − 20 − tb − 20 − QRR − 0.03 − ns nC BODY−DRAIN DIODE RATINGS (Note 6) Diode Forward On−Voltage (IS = −5.4 Adc, VGS = 0 V) (IS = −5.4 Adc, VGS = 0 Vdc, TJ = 125°C) Reverse Recovery Time (IS = −5.4 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) Reverse Recovery Stored Charge 5. Handling precautions to protect against electrostatic discharge is mandatory. 6. Indicates Pulse Test: Pulse Width = 300 ms max, Duty Cycle = 2%. 7. Switching characteristics are independent of operating junction temperature. http://onsemi.com 3 mC NTMS5P02R2 −8 V −2.3 V −4.5 V −3.7 V −3.1 V 10 8 −2.7 V −2.5 V 6 12 TJ = 25°C −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) 12 −2.1 V −1.9 V 4 −1.7 V 2 0 VGS = −1.3 V 0 0.25 0.5 0.75 1 1.25 1.5 1.75 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VDS ≥ −10 V 10 8 6 4 25°C 1 ID = −5.4 A TJ = 25°C 0.06 0.04 0.02 8 2 4 6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.08 0 TJ = 25°C VGS = −2.5 V 0.04 VGS = −2.7 V 0.03 VGS = −4.5 V 0.02 0.01 2 4 8 10 6 −ID, DRAIN CURRENT (AMPS) 12 Figure 4. On-Resistance versus Drain Current and Gate Voltage 10,000 1.6 VGS = 0 V ID = −5.4 A VGS = −4.5 V 1.2 1 0.8 0.6 −50 3 0.05 Figure 3. On−Resistance versus Gate−To−Source Voltage 1.4 1.5 2 2.5 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 2. Transfer Characteristics −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0 TJ = −55°C 2 0 2 100°C −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) TJ = 150°C 1000 TJ = 125°C 100 150 2 Figure 5. On−Resistance Variation with Temperature 4 6 8 10 12 14 16 18 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 20 Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 4 C, CAPACITANCE (pF) 4000 VGS = 0 V Ciss TJ = 25°C 3000 Crss 2000 Ciss 1000 0 Coss Crss 10 5 0 5 10 15 20 −VGS −VDS 5 20 QT 4 −VGS −VDS 3 Q1 16 12 Q2 8 2 ID = −5.4 A TJ = 25°C 1 0 0 4 8 12 16 20 4 24 0 Qg, TOTAL GATE CHARGE (nC) −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) VDS = 0 V −VGS , GATE−TO−SOURCE VOLTAGE (VOLTS) NTMS5P02R2 Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation t, TIME (ns) VDD = −16 V ID = −5.4 A VGS = −4.5 V −IS, SOURCE CURRENT (AMPS) 1000 td(off) tf tr 100 td(on) 10 1 10 5 4 3 2 1 0 100 VGS = 0 V TJ = 25°C 0.2 RG, GATE RESISTANCE (OHMS) 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Figure 9. Resistive Switching Time Variation versus Gate Resistance Figure 10. Diode Forward Voltage versus Current DRAIN−TO−SOURCE DIODE CHARACTERISTICS ID , DRAIN CURRENT (AMPS) 100 VGS = 20 V SINGLE PULSE TC = 25°C 1 ms 10 di/dt IS 10 ms trr 1 0.1 ta RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 1 1 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) tb TIME 0.25 IS tp dc 10 100 IS VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Diode Reverse Recovery Waveform http://onsemi.com 5 NTMS5P02R2 TYPICAL ELECTRICAL CHARACTERISTICS Rthja(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 10 1 0.1 0.01 0.001 D = 0.5 0.2 0.1 0.05 Normalized to qja at 10s. 0.02 0.01 Chip 0.0163 W 0.0652 W 0.1988 W 0.0307 F 0.1668 F 0.5541 F 0.6411 W 1.9437 F 0.9502 W 72.416 F SINGLE PULSE 1.0E−05 1.0E−04 1.0E−03 1.0E−02 1.0E−01 1.0E+00 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 6 1.0E+01 1.0E+02 Ambient 1.0E+03 NTMS5P02R2 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AG −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 −Y− K G C N MILLIMETERS DIM MIN MAX A 4.80 5.00 B 3.80 4.00 C 1.35 1.75 D 0.33 0.51 G 1.27 BSC H 0.10 0.25 J 0.19 0.25 K 0.40 1.27 M 0_ 8 _ N 0.25 0.50 S 5.80 6.20 STYLE 13: PIN 1. N.C. 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 6. DRAIN 7. DRAIN 8. DRAIN X 45 _ SEATING PLANE −Z− H 0.10 (0.004) D 0.25 (0.010) M Z Y S X M J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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