NUD3105 Integrated Relay, Inductive Load Driver This device is used to switch inductive loads such as relays, solenoids incandescent lamps , and small DC motors without the need of a free−wheeling diode. The device integrates all necessary items such as the MOSFET switch, ESD protection, and Zener clamps. It accepts logic level inputs thus allowing it to be driven by a large variety of devices including logic gates, inverters, and microcontrollers. Features • Provides a Robust Driver Interface Between DC Relay Coil and • • • • • • Sensitive Logic Circuits Optimized to Switch Relays from 3.0 V to 5.0 V Rail Capable of Driving Relay Coils Rated up to 2.5 W at 5.0 V Internal Zener Eliminates the Need of Free−Wheeling Diode Internal Zener Clamp Routes Induced Current to Ground for Quieter Systems Operation Low VDS(ON) Reduces System Current Drain Pb−Free Package is Available http://onsemi.com RELAY/INDUCTIVE LOAD DRIVER SILICON SMALLBLOCKt 0.5 AMPERE, 8.0 VOLT CLAMP INTERNAL CIRCUIT DIAGRAM Drain (3) Gate (1) 1.0 k 300 k Typical Applications • Telecom: Line Cards, Modems, Answering Machines, FAX • Computers and Office: Photocopiers, Printers, Desktop Computers • Consumer: TVs and VCRs, Stereo Receivers, CD Players, Cassette Source (2) Recorders MARKING DIAGRAM • Industrial:Small Appliances, Security Systems, Automated Test • Equipment, Garage Door Openers Automotive: 5.0 V Driven Relays, Motor Controls, Power Latches, Lamp Drivers SOT−23 (TO−236) CASE 318 1 JW4 M G G 1 JW4 = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Shipping † Device Package NUD3105LT1 SOT−23 3000 / Tape & Reel SOT−23 (Pb−Free) 3000 / Tape & Reel NUD3105LT1G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 April, 2006 − Rev. 8 1 Publication Order Number: NUD3105/D NUD3105 MAXIMUM RATINGS (TJ = 25°C unless otherwise specified) Symbol Value Unit Drain to Source Voltage − Continuous Rating VDSS 6.0 Vdc Gate to Source Voltage – Continuous VGS 6.0 Vdc Drain Current – Continuous ID 500 mA Single Pulse Drain−to−Source Avalanche Energy (TJinitial = 25°C) (Note 2) Ez 50 mJ Repetitive Pulse Zener Energy Limit (DC v 0.01%) (f = 100 Hz, DC = 0.5) Ezpk 4.5 mJ Junction Temperature TJ 150 °C Operating Ambient Temperature TA −40 to 85 °C Storage Temperature Range Tstg −65 to +150 °C Total Power Dissipation (Note 1) Derating Above 25°C PD 225 1.8 mW mW/°C RqJA 556 °C/W Thermal Resistance, Junction−to−Ambient Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. This device contains ESD protection and exceeds the following tests: Human Body Model 2000 V per MIL_STD−883, Method 3015. Machine Model Method 200 V. 2. Refer to the section covering Avalanche and Energy. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Drain to Source Sustaining Voltage (Internally Clamped), (ID = 10 mA) VBRDSS 6.0 8.0 9.0 V Ig = 1.0 mA BVGSO − − 8.0 V − − − − 15 15 mA 5.0 − − − 19 50 mA 0.8 0.8 1.2 − 1.4 1.4 V − − − − − − − − − − 1.2 1.3 0.9 1.3 0.9 W IDS(on) 300 200 400 − − − mA gFS 350 570 − mmhos OFF CHARACTERISTICS Drain to Source Leakage Current (VDS = 5.5 V , VGS = 0 V, TJ = 25°C) (VDS = 5.5 V, VGS = 0 V, TJ = 85°C ) IDSS Gate Body Leakage Current (VGS = 3.0 V, VDS = 0 V) (VGS = 5.0 V, VDS = 0 V) IGSS ON CHARACTERISTICS Gate Threshold Voltage (VGS = VDS, ID = 1.0 mA) (VGS = VDS, ID = 1.0 mA, TJ = 85°C) VGS(th) Drain to Source On−Resistance (ID = 250 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 3.0 V) (ID = 500 mA, VGS = 5.0 V) (ID = 500 mA, VGS = 3.0 V, TJ=85°C) (ID = 500 mA, VGS = 5.0 V, TJ=85°C) RDS(on) Output Continuous Current (VDS = 0.25 V, VGS = 3.0 V) (VDS = 0.25 V, VGS = 3.0 V, TJ = 85°C) Forward Transconductance (VOUT = 5.0 V, IOUT = 0.25 A) http://onsemi.com 2 NUD3105 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Input Capacitance (VDS = 5.0 V,VGS = 0 V, f = 10 kHz) Ciss − 25 − pF Output Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) Coss − 37 − pF Transfer Capacitance (VDS = 5.0 V, VGS = 0 V, f = 10 kHz) Crss − 8.0 − pF Symbol Min Typ Max Units tPHL tPLH − − 25 80 − − tPHL tPLH − − 44 44 − − tf tr − − 23 32 − − tf tr − − 53 30 − − DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS Characteristic Propagation Delay Times: High to Low Propagation Delay; Figure 1 (5.0 V) Low to High Propagation Delay; Figure 1 (5.0 V) nS High to Low Propagation Delay; Figure 1 (3.0 V) Low to High Propagation Delay; Figure 1 (3.0 V) Transition Times: Fall Time; Figure 1 (5.0 V) Rise Time; Figure 1 (5.0 V) nS Fall Time; Figure 1 (3.0 V) Rise Time; Figure 1 (3.0 V) VIH Vin 50% 0V tPHL tPLH VOH 90% Vout 50% 10% VOL tr tf Figure 1. Switching Waveforms http://onsemi.com 3 NUD3105 TYPICAL CHARACTERISTICS 10 TJ = 25°C VGS = 5.0 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 10 1.0 VGS = 3.0 V 0.1 VGS = 2.0 V 0.01 0.001 VDS = 0.8 V 1.0 0.1 0.01 85°C 0.001 50°C 0.0001 25°C 0.0001 0.00001 −40°C VGS = 1.0 V 0.00001 0.000001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.5 2.0 2.5 3.0 3.5 4.0 4.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 2. Output Characteristics Figure 3. Transfer Function 5.0 50 ID = 0.5 A VGS = 3.0 V 1000 RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) RDS(ON), DRAIN−TO−SOURCE RESISTANCE (mW) 1.5 VDS, DRAIN TO SOURCE VOLTAGE (V) 1200 ID = 0.25 A VGS = 3.0 V 800 600 400 ID = 0.5 A VGS = 5.0 V 200 0 −50 −25 0 25 50 75 100 125 −40°C 45 ID = 250 mA 40 35 125°C 30 85°C 25 50°C 20 25°C 15 0.8 1.0 1.2 1.4 1.6 1.8 TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 4. On Resistance Variation vs. Temperature Figure 5. RDS(ON) Variation with Gate−To−Source Voltage IZ = 10 mA VZ, ZENER CLAMP VOLTAGE (V) 8.18 8.16 8.14 8.12 8.10 8.08 8.06 8.04 8.02 8.00 −50 2.0 13.0 8.20 VZ, ZENER VOLTAGE (V) 1.0 −25 0 25 50 75 100 125 VGS = 0 V 12.0 −40°C 11.0 25°C 10.0 9.0 8.0 7.0 85°C 6.0 0.1 1.0 10 100 1000 TEMPERATURE (°C) IZ, ZENER CURRENT (mA) Figure 6. Zener Voltage vs. Temperature Figure 7. Zener Clamp Voltage vs. Zener Current http://onsemi.com 4 NUD3105 TYPICAL CHARACTERISTICS 1.2 40 35 RDS(ON), DRAIN−TO−SOURCE RESISTANCE (W) 1.1 IGSS, GATE LEAKAGE (mA) 125°C 1.0 0.9 85°C 0.8 50°C 0.7 25°C 0.6 −40°C 0.5 0.05 0.1 0.15 0.2 0.25 0.3 0.35 0.4 0.45 0.5 30 25 VGS = 5.0 V 20 15 VGS = 3.0 V 10 5 0 −50 0 −25 ID, DRAIN CURRENT (A) 25 50 75 100 125 TEMPERATURE (°C) Figure 8. On−Resistance vs. Drain Current and Temperature Figure 9. Gate Leakage vs. Temperature 1.0 VGS = 3.0 V, TC = 25°C ID, DRAIN CURRENT (A) ID−Continuous = 0.5 A RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT DC PW = 0.1 s DC = 50% 0.1 PW = 10 ms DC = 20% PW = 7.0 ms DC = 5% Typical IZ vs. VZ V(BR)DSS min = 6.0 V 0.01 0.01 0.1 1.0 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 Figure 10. Safe Operating Area r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 D = 0.5 0.2 0.1 0.1 0.05 Pd(pk) 0.02 0.01 0.01 0.001 0.01 PW t1 t2 SINGLE PULSE 0.1 PERIOD DUTY CYCLE = t1/t2 1.0 10 100 1000 t1, PULSE WIDTH (ms) Figure 11. Transient Thermal Response http://onsemi.com 5 10,000 100,000 1,000,000 NUD3105 Designing with this Data Sheet 4. Verify that the circuit driving the gate will meet the VGS(th) from the Electrical Characteristics table. 5. Using the max output current calculated in step 1, check Figure 7 to insure that the range of Zener clamp voltage over temperature will satisfy all system & EMI requirements. 6. Use IGSS and IDSS from the Electrical Characteristics table to ensure that “OFF” state leakage over temperature and voltage extremes does not violate any system requirements. 7. Review circuit operation and insure none of the device max ratings are being exceeded. 1. Determine the maximum inductive load current (at max VCC, min coil resistance & usually minimum temperature) that the NUD3105 will have to drive and make sure it is less than the max rated current. 2. For pulsed operation, use the Transient Thermal Response of Figure 11 and the instructions with it to determine the maximum limit on transistor power dissipation for the desired duty cycle and temperature range. 3. Use Figures 10 and 11 with the SOA notes to insure that instantaneous operation does not push the device beyond the limits of the SOA plot. APPLICATIONS DIAGRAMS +3.0 ≤ VDD ≤ +3.75 Vdc +4.5 ≤ VCC ≤ +5.5 Vdc + + Vout (3) Vout (3) NUD3105LT1 NUD3105LT1 Vin (1) Vin (1) GND (2) GND (2) Figure 12. A 200 mW, 5.0 V Dual Coil Latching Relay Application with 3.0 V Level Translating Interface http://onsemi.com 6 NUD3105 Max Continuous Current Calculation for TX2−5V Relay, R1 = 178 W Nominal @ RA = 25°C Assuming ±10% Make Tolerance, R1 = 178 W * 0.9 = 160 W Min @ TA = 25°C − − TC for Annealed Copper Wire is 0.4%/°C AROMAT JS1E−5V R1 = 160 W * [1+(0.004) * (−40°−25°)] = 118 W Min @ −40°C IO Max = (5.5 V Max − 0.25V) /118 W = 45 mA +4.5 TO +5.5 Vdc AROMAT JS1E−5V + + + + +4.5 TO +5.5 Vdc + AROMAT JS1E−5V AROMAT TX2−5V AROMAT JS1E−5V − − Vout (3) − Vout (3) NUD3105LT1 NUD3105LT1 Vin (1) Vin (1) GND (2) GND (2) Figure 13. A 140 mW, 5.0 V Relay with TTL Interface Figure 14. A Quad 5.0 V, 360 mW Coil Relay Bank http://onsemi.com 7 NUD3105 PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. D SEE VIEW C 3 HE E c 1 2 b DIM A A1 b c D E e L L1 HE 0.25 e q A L A1 L1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 VIEW C SOLDERING FOOTPRINT 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. SMALLBLOCK is a trademark of Semiconductor Components Industries, LLC (SCILLC). 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