NUF4402MN Low Capacitance 4 Line EMI Filter with ESD Protection in DFN8 1.6 x 1.6 mm Package This device is a 4 line EMI filter array for wireless applications. Greater than −25 dB attenuation is obtained at frequencies from 800 MHz to 3.0 GHz. It also offers ESD protection−clamping transients from static discharges. ESD protection is provided across all capacitors. http://onsemi.com 1 8 • Cd Cd Cd Cd 3 >14 kV (Contact) DFN Package, 1.6 x 1.6 mm Moisture Sensitivity Level 1 ESD Ratings: Machine Model = C Human Body Model = 3B This is a Pb−Free Device* 6 4 5 (Top View) MARKING DIAGRAM • Reduces EMI/RFI Emmisions on a Data Line • Integrated Solution Offers Cost and Space Savings • Reduces Parasitic Inductances Which Offer a More “Ideal” Low Pass Filter Response Integrated Solution Improves System Reliability 8 1 1 DFN8 CASE 506AK F2 MG G F2 = Specific Device Code M = Month Code G = Pb−Free Package (Note: Microdot may be in either location) Applications • • • • • Cd 7 Benefits • Cd PIN CONNECTIONS EMI Filtering and ESD Protection for Data Lines Wireless Phones Handheld Products Notebook Computers LCD Displays 8 1 7 2 6 GND • • • Cd 2 Features • EMI Filtering and ESD Protection • Integration of 20 Discrete Components • Compliance with IEC61000−4−2 (Level 4) Cd 3 5 4 (Bottom View) ORDERING INFORMATION *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2005 June, 2005 − Rev. 2 1 Device Package Shipping† NUF4402MNT1G DFN8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NUF4402MN/D NUF4402MN MAXIMUM RATINGS Parameter Symbol ESD Discharge IEC61000−4−2 Value VPP Unit kV Contact Discharge Machine Model Human Body Model 14 0.4 8.0 Operating Temperature Range TOP −40 to 85 °C Storage Temperature Range TSTG −55 to 150 °C TL 260 °C Maximum Lead Temperature for Soldering Purposes (1.8 in from case for 10 seconds) Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Maximum Reverse Working Voltage Breakdown Voltage Symbol Test Conditions Min Typ Max Unit 5.0 V 8.0 V 100 nA 100 115 12 15 VRWM VBR IR = 1.0 mA Leakage Current IR VRWM = 3.3 V Resistance RA IR = 10 mA 85 Capacitance (Notes 1 and 2) Cd VR = 2.5 V, f = 1.0 MHz 10 Cut−Off Frequency (Note 3) f3dB Above this frequency, appreciable attenuation occurs 1. Measured at 25°C. 2. Total Line Capacitance is two times the Diode Capacitance (Cd). 3. 50 source and 50 load termination. http://onsemi.com 2 6.0 7.0 151 pF MHz NUF4402MN 0 0 −5 −5 −10 −10 −15 −15 S21 (dB) S21 (dB) TYPICAL PERFORMANCE CURVES (TA= 25°C unless otherwise specified) −20 −25 Channel 1 −30 −20 −25 Channel 1 to 2 −30 Channel 4 −35 Channel 2 −40 −45 1.0E+6 100E+6 Channel 2 to 3 −40 Channel 3 10.0E+6 Channel 3 to 4 −35 1.0e+9 −45 1.0E+6 10.0E+9 10.0E+6 FREQUENCY (Hz) 1.0e+9 10.0E+9 FREQUENCY (Hz) Figure 1. Insertion Loss Characteristic Figure 2. Insertion Loss Characteristic 110 2.0 108 106 1.5 RESISTANCE () NORMALIZED CAPACITANCE 100E+6 1.0 0.5 104 102 100 98 96 94 92 0 0 1.0 2.0 3.0 4.0 90 −40 5.0 −20 0 20 40 60 80 REVERSE VOLTAGE (V) TEMPERATURE (°C) Figure 3. Typical Capacitance vs. Reverse Biased Voltage (Normalized Capacitance Cd at 2.5 V) Figure 4. Typical Resistance over Temperature http://onsemi.com 3 NUF4402MN PACKAGE DIMENSIONS DFN8 CASE 506AK−01 ISSUE A NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. DIMENSION b APPLIES TO THE EXPOSED PAD AS WELL AS TEH TERMINALS. 4. DIMENSION b APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. EXPOSED PADS CONNECTED TO DIE FLAG. USED AS TEST CONTACTS. A D B PIN ONE REFERENCE 2X 0.15 C ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ ÉÉÉÉ E (A3) TOP VIEW 2X 0.15 C 0.10 C DIM A A1 A3 b D D2 E E2 e K L MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.15 0.25 1.60 BSC 0.70 0.90 1.60 BSC 0.30 0.50 0.40 BSC 0.20 −−− 0.20 0.40 (A3) A 8X 0.08 C SEATING PLANE SIDE VIEW A1 C D2 8X L 1 e 2X 0.25X0.4 MM NOTE 5 4 E2 8X K 8 5 8X b 0.10 C A B BOTTOM VIEW 0.05 C NOTE 3 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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