1SMA5914~1SMA5949 SURFACE MOUNT SILICON ZENER DIODE VOLTAGE 3.6 to 100 Volts POWER 1.5 Watts SMA/DO-214AC Unit: inch (mm) FEATURES • For surface mounted applications in order to optimize board space. .114(2.90) .098(2.50) • Low profile package • Built-in strain relief • Low inductance • Typical IR less than 1.0µA above 12V .062(1.60) .047(1.20) • Glass passivated junction .181(4.60) .157(4.00) • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • High temperature soldering : 260°C /10 seconds at terminals MECHANICALDATA .096(2.44) environment substance directive request .012(.305) .006(.152) .078(2.00) • Pb free product : 99% Sn above can meet RoHS .060(1.52) .030(0.76) .008(.203) .002(.051) • Case: JEDEC DO-214AC,Molded plastic over passivated junction. • Terminals: Solder plated,solderable per MIL-STD-750, Method 2026 • Polarity: Color band denotes positive end (cathode) .208(5.28) .188(4.80) • Standard Packaging:12mm tape (EIA-481) • Weight: 0.002 ounce, 0.064 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS VALUE UNITS Pwak Pulse Power Dissipation on TA=70°C (Notes A) Derate above 70°C 1.5 Watts PD 15.0 mW / °C Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC method) IFSM 10 Amps Operating and Storage Temperature Range TJ, TSTG -55 to +150 °C NOTES: A.Mounted on 5.0mm2 (.013mm thick) land areas. B.Measured on 8.3ms, and single half sine-wave or equivalent square wave ,duty cycle=4 pulses per minute maximum. STAD-JAN.13.2006 PAGE . 1 1SMA5914~1SMA5949 N o m i n a l Ze n e r Vo l t a g e Part N umber M a x i m u m Ze n e r I m p e d a n c e Z ZT @ I Zt V z@ I zt Max R everse Leakage C urrent Z ZK @ I ZK I R@ V R Marking C ode No m.V M i n. V M a x. V Ω mA Ω mA µA V 1SMA5914 3.6 3.42 3.78 9 104.2 500 1.00 75.00 1.00 914A 1SMA5915 3.9 3.71 4.10 8 96.1 500 1.00 25.00 1.00 915A 1SMA5916 4.3 4.09 4.52 6 87.2 500 1.00 5.00 1.00 916A 1SMA5917 4.7 4.47 4.94 5 79.8 500 1.00 5.00 1.50 917A 1SMA5918 5.1 4.85 5.36 4 73.5 350 1.00 5.00 2.00 918A 1SMA5919 5.6 5.32 5.88 2 66.9 250 1.00 5.00 3.00 919A 1SMA5920 6.2 5.89 6.51 2 60.5 200 1.00 5.00 4.00 920A 1SMA5921 6.8 6.46 7.14 3 55.1 200 1.00 5.00 5.20 921A 1SMA5922 7.5 7.13 7.88 3 50.0 400 0.50 5.00 6.00 922A 1SMA5923 8.2 7.79 8.61 4 45.7 400 0.50 5.00 6.50 923A 1SMA5924 9.1 8.65 9.56 4 41.2 500 0.50 5.00 7.00 924A 1SMA5925 10 9.50 10.50 5 37.5 500 0.25 5.00 8.00 925A 1SMA5926 11 10.45 11.55 6 34.1 550 0.25 1.00 8.40 926A 1SMA5927 12 11.40 12.60 7 31.2 550 0.25 1.00 9.10 927A 1SMA5928 13 12.35 13.65 7 28.8 550 0.25 1.00 9.90 928A 1SMA5929 15 14.25 15.75 9 25.0 600 0.25 1.00 11.40 929A 1SMA5930 16 15.20 16.80 10 23.4 600 0.25 1.00 12.20 930A 1SMA5931 18 17.10 18.90 12 20.8 650 0.25 1.00 13.70 931A 1SMA5932 20 19.00 21.00 14 18.7 650 0.25 1.00 15.20 932A 1SMA5933 22 20.90 23.10 18 17.0 650 0.25 1.00 16.70 933A 1SMA5934 24 22.80 25.20 19 15.6 700 0.25 1.00 18.20 934A 1SMA5935 27 25.65 28.35 23 13.9 700 0.25 1.00 20.60 935A 1SMA5936 30 28.50 31.50 26 12.5 750 0.25 1.00 22.80 936A 1SMA5937 33 31.35 34.65 33 11.4 800 0.25 1.00 25.10 937A 1SMA5938 36 34.20 37.80 38 10.4 850 0.25 1.00 27.40 938A 1SMA5939 39 37.05 40.95 45 9.6 900 0.25 1.00 29.70 939A 1SMA5940 43 40.85 45.15 53 8.7 950 0.25 1.00 32.70 940A 1SMA5941 47 44.65 49.35 67 8.0 1000 0.25 1.00 35.80 941A 1SMA5942 51 48.45 53.55 70 7.3 1100 0.25 1.00 38.80 942A 1SMA5943 56 53.20 58.80 86 6.7 1300 0.25 1.00 42.60 943A 1SMA5944 62 58.90 65.10 100 6.0 1500 0.25 1.00 47.10 944A 1SMA5945 68 64.60 71.40 120 5.5 1700 0.25 1.00 51.70 945A 1SMA5946 75 71.25 78.75 140 5.0 2000 0.25 1.00 56.00 946A 1SMA5947 82 77.90 86.10 160 4.6 2500 0.25 1.00 62.20 947A 1SMA5948 91 86.45 95.55 200 4.1 3000 0.25 1.00 68.20 948A 1SMA5949 100 95.00 105.00 250 3.7 3100 0.25 1.00 76.00 949A STAD-JAN.13.2006 PAGE . 2 2.5 2 1.5 1 0.5 0 0 20 40 60 80 100 120 140 150 180 qvz, TEMPERATURE COEFICENT (mV/ OC) P D , MAXIMUM POWER DISSIPATION (WATTS) 1SMA5914~1SMA5949 10 V @I Z ZT 8 6 4 2 0 -2 -4 2 O TL,LEADTEMPERATURE( C) 70 50 30 20 10 30 50 70 200 100 Zz, DYNAMIC IMPEDANCE (OHMS) qvz, TEMPERATURE COEFICENT (mV/ OC) V @I Z ZT 20 10 12 Fig.2 Zener Voltage - to 12 volts 200 10 8 V , ZENER VOLTAGE (VOLTS) Z Fig.1 Steady State Power Derating 100 6 4 1K 500 VZ=150V 200 100 50 T = 25 O C J I (rms) =0.1 I (dc) Z Z 91V 62V 20 10 5 22V 12V 2 1 0.5 Vz, ZENER VOLTAGE (VOLTS) 6.8V 1 5 2 10 20 50 100 200 500 Iz, ZENER TEST CURRENT (mA) Fig.3 Zener Voltage - 14 to 200 Volts Fig.4 Effect of Zener Current I Z (dc)=1mA 100 70 50 30 20 10mA 10 7 5 3 2 I Z (rms)=0.1I Z (dc) 20mA 5 7 10 20 3 0 40 50 60 70 Vz, ZENER VOLTAGE (VOLTS) Fig.5 Effect of Zener Voltage STAD-JAN.13.2006 100 Ppk, PEAKSURGE POWER (WATTS) Zz, DYNAMIC IMPEDANCE (OHMS) 1K 200 RECTANGULAR NONREPETITIVE WAVEFORM O T J =25 C PRIOR TO INTIAL PULSE 500 300 200 100 50 30 20 10 0.1 0.20.3 0.5 1 2 3 5 10 20 30 50 100 PW, PULSE WIDTH (ms) Fig.6 Maximum Surge Power PAGE . 3 1SMA5914~1SMA5949 100 Iz, ZENER CURRENT (mA) Iz, ZENER CURRENT (mA) 100 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 1 2 3 4 5 6 7 8 Vz, ZENER VOLTAGE (VOLTS) Fig.7 Vz = 6.8 thru 10 Volts 9 10 50 30 20 10 5 3 2 1 0.5 0.3 0.2 0.1 0 10 20 30 40 50 60 70 80 90 100 Vz, ZENER VOLTAGE (VOLTS) Fig.8 Vz = 12 thru 82 Volts NOTE 3. ZENER VOLTAGE (Vz) MEASUREMENT Nominal zener voltage is measured with the device function in thermal equilibrium with ambient O temperature at 25 C NOTE 4. ZENER IMPEDANCE (Zz) DERIVATION Zzt and Zzk are measured by dividing the ac voltage drop across the device by the accurrent applied. The specified limits are for Iz(ac) = 0.1 Iz, (dc) with the ac freqency = 60Hz LEGAL STATEMENT Copyright PanJit International, Inc 2006 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. STAD-JAN.13.2006 PAGE . 4