LOW NOISE 150mA LDO REGULATOR R1113Z SERIES NO. EA-101-0504 OUTLINE The R1113Z Series are CMOS-based voltage regulator ICs with high output voltage accuracy, extremely low supply current, low ON-resistance, and high ripple rejection. Each of these ICs consists of a voltage reference unit, an error amplifier, resistors, a current limit circuit, and a chip enable circuit. These ICs perform with low dropout voltage and a chip enable function. The line transient response and load transient response of the R1113Z Series are excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment. The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is WL-CSP4-P1 (Wafer Level CSP), high density mounting of the ICs on boards is possible. FEATURES • • • • • • • • • • Ultra-Low Supply Current................................................ Typ. 100µA Standby Mode ................................................................. Typ. 0.1µA Low Dropout Voltage....................................................... Typ. 0.23V (IOUT=100mA 3.0V Output type) High Ripple Rejection ..................................................... Typ. 80dB(f=1kHz 3.0V Output type) Low Temperature-Drift Coefficient of Output Voltage...... Typ. ±100ppm/°C Excellent Line Regulation ............................................... Typ. 0.05%/V High Output Voltage Accuracy ........................................ ±2.0% Excellent Dynamic Response Small Package .............................................................. WL-CSP4-P1 (Wafer Level CSP) Output Voltage .................................................. ............. Stepwise setting with a step of 0.1V in the range of 1.5V to5.0V is possible • Built-in Chip Enable Circuit (2 types; A: active low, B: active high) • Built-in Fold Back Protection Circuit ............................... Typ. 30mA (Current at short mode) • Ceramic capacitors are recommended to be used with this IC APPLICATIONS • Power source for cellular phones such as GSM, CDMA and various kinds of PCS. • Power source for electrical appliances such as cameras, VCRs and camcorders. • Power source for battery-powered equipment. 1 R1113Z BLOCK DIAGRAM R1113Zxx1A R1113Zxx1B 2 VOUT VDD 3 2 VOUT VDD 3 - - + + Vref Vref Current Limit Current Limit 1 GND CE 4 CE 4 1 GND SELECTION GUIDE The output voltage, the active type, the packing type, and the taping type for the ICs can be selected at the user's request. The selection can be made with designating the part number as shown below; R1113xxx1x-xx ↑↑ a b Code a b c d 2 ←Part Number ↑ ↑ c d Contents Designation of Package Type : Z:WL-CSP4-P1 (Wafer Level CSP) Setting Output Voltage (VOUT) : Stepwise setting with a step of 0.1V in the range of 1.5V to 5.0V is possible. Designation of Active Type : A : active low type B : active high type Designation of Taping Type : Ex. TR, TL (refer to Taping Specifications; TR type is the standard direction.) R1113Z PIN CONFIGURATION WL-CSP4-P1 3 VDD 4 CE 4 3 2 VOUT 1 GND 1 2 Bottom View Top View PIN DESCRIPTION Pin No Symbol Description 1 GND Ground Pin 2 VOUT Output pin 3 VDD Input Pin 4 CE or CE Chip Enable Pin ABSOLUTE MAXIMUM RATINGS Symbol Item Rating Unit 7.0 V VIN Input Voltage VCE Input Voltage( CE or CE Pin) -0.3 ~ VIN+0.3 V VOUT Output Voltage -0.3 ~ VIN+0.3 V IOUT Output Current 200 mA PD Power Dissipation 190 mW Topt Operating Temperature Range -40 ~ 85 °C Tstg Storage Temperature Range -55 ~ 125 °C 3 R1113Z Power Dissipation Typical Characteristics ∗Measurement Conditions Mounted on board (Wind velocity=0m/s) Board Material: FR-4 (Double-layer) Board Size: 40mm×40mm×t1.6mm Wiring area ratio against the board: 50% ∗Result Power dissipation 465mW Thermal Resistance 215°C/W 700 Power Dissipation(mW) 600 500 400 300 WL-CSP-4 200 100 0 0 25 50 75 100 Temperature Topt(°C) 4 125 R1113Z ELECTRICAL CHARACTERISTICS • R1113Zxx1A Symbol Item Conditions VOUT Output Voltage VIN = Set VOUT+1V IOUT Output Current VIN − VOUT = 1.0V Min. 1mA < = IOUT < = 30mA Typ. VOUT×0.98 Max. Unit VOUT×1.02 V 150 1mA < = IOUT < = 80mA mA ∆VOUT/∆IOUT Load Regulation VIN = Set VOUT+1V VDIF Dropout Voltage Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE ISS Supply Current VIN = Set VOUT+1V Supply Current (Standby) VIN = VCE = Set VOUT+1V ∆VOUT/∆VIN Line Regulation Set VOUT+0.5V < = VIN < = 6V RR Ripple Rejection Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE VIN Input Voltage Istandby 20 IOUT = 30mA IOUT = 30mA ILIM Short Current Limit VOUT = 0V RPU CE Pull-up Resistance 2.5 VCEH CE Input Voltage “H” VCEL CE Input Voltage “L” en Output Noise 45 mV 100 170 µA 0.1 1.0 µA 0.05 0.20 %/V 6.0 V 2.0 Output Voltage Temperature Coefficient ∆VOUT/∆T • Topt=25°C −40°C < = Topt < = 85°C ±100 ppm/°C 30 mA 10.0 MΩ 1.5 VIN V 0.00 0.25 V BW=10Hz to 100kHz 5.0 µVrms 30 R1113Zxx1B Symbol Topt=25°C Item Conditions 1mA < = IOUT < = 30mA Min. Typ. Unit VOUT×1.02 V VOUT Output Voltage VIN = Set VOUT+1V IOUT Output Current VIN − VOUT = 1.0V ∆VOUT/∆IOUT Load Regulation VIN = Set VOUT+1V VDIF Dropout Voltage Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE ISS Supply Current VIN = Set VOUT+1V Supply Current (Standby) ∆VOUT/∆VIN RR Istandby VIN VOUT×0.98 Max. 150 1mA < = IOUT < = 80mA 45 mV 100 170 µA VIN = VCE = Set VOUT+1V 0.1 1.0 µA Line Regulation Set VOUT+0.5V < = VIN < = 6V IOUT = 30mA 0.05 0.20 %/V Ripple Rejection Refer to the ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE 6.0 V Input Voltage 20 2.0 Output Voltage Temperature Coefficient IOUT = 30mA ILIM Short Current Limit VOUT = 0V RPU CE Pull-up Resistance 2.5 VCEH CE Input Voltage “H” VCEL CE Input Voltage “L” ∆VOUT/∆T en mA Output Noise −40°C < = Topt < = 85°C BW=10Hz to 100kHz ±100 ppm/°C 30 mA 5.0 10.0 MΩ 1.5 VIN V 0.00 0.25 V 30 µVrms 5 R1113Z ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE Topt = 25°C Dropout Voltage VDIF (V) Condition Typ. 0.50 0.45 0.40 0.34 IOUT = 100mA 0.28 0.25 0.24 0.23 Output Voltage VOUT (V) 2.0 2.4 2.8 < = < = < = 1.5 1.6 1.7 1.8 1.9 VOUT VOUT VOUT < = < = < = 2.3 2.7 5.0 Max. 0.70 0.65 0.60 0.55 0.44 0.35 0.29 0.26 Topt = 25°C Ripple Rejection RR (dB) Condition Typ. 80 f = 1kHz, Ripple 0.5Vp-p VIN = Set VOUT + 1V 70 Output Voltage VOUT (V) 1.5 4.1 < = < = VOUT VOUT < = < = 4.0 5.0 Max. OPERATION R1113Zxx1A R1113Zxx1B 2 VOUT VDD 3 2 VOUT VDD 3 - + + R1 Vref Vref Current Limit CE 4 R1 R2 Current Limit 1 GND CE 4 R2 1 GND In these ICs, fluctuation of output voltage, VOUT is detected by feedback registers R1, R2, and the result is compared with a reference voltage by the error amplifier, so that a constant voltage is output. A current limit circuit for protection in short mode and a chip enable circuit, are included. 6 R1113Z TECHNICAL NOTES When using these ICs, consider the following points: Phase Compensation In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance). We use Ceramic Capacitors for evaluation of these ICs. Recommended Capacitors ; GRM40X5R225K6.3 (Murata) GRM40-034X5R335K6.3 (Murata) GRM40-034X5R475K6.3 (Murata) (Note: When the additional ceramic capacitors are connected to the output pin with an output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as same external components as ones to be used on the PCB.) PCB Layout Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result. Connect a capacitor with a capacitance value as much as 2.2µF or more between VDD and GND pin, and as close as possible to the pins. Set external components, especially the output capacitor, as close as possible to the ICs, and make wiring as short as possible. 7 R1113Z TEST CIRCUITS CE CE 4 4 VOUT VDD IN R1113Zxx1B Series 3 2 VOUT VDD IN IOUT 3 ISS R1113Zxx1B Series 2.2µF 1 2.2µF OUT GND Fig.1 Standard test Circuit Fig.2 Supply Current Test Circuit CE CE 4 4 VOUT VDD 3 P.G R1113Zxx1B Series OUT 2.2µF 1 2.2µF GND IN 2 2 OUT VOUT VDD IN 3 IOUT R1113Zxx1B Series OUT 2 2.2µF 2.2µF 1 2.2µF GND 1 GND I1 Fig.3 Ripple Rejection, Line Transient Response Test Circuit I2 Fig.4 Load Transient Response Test Circuit TYPICAL APPLICATION CE CE VDD R1113Zxx1A VOUT Series IN + Cap. OUT + GND Cap. VDD R1113Zxx1B VOUT Series IN + Cap. + GND (External Components) Output Capacitor ; Ceramic 2.2µF (Set Output Voltage in the range from 2.6 to 5.0V) Ceramic 4.7µF (Set Output Voltage in the range from 1.5 to 2.5V) Input Capacitor ; Ceramic 2.2µF 8 OUT Cap. R1113Z TYPICAL CHARACTERISTICS 1) Output Voltage vs. Output Current Topt=25°C R1113Z201B R1113Z301B 3.5 Output Voltage VOUT(V) Output Voltage VOUT(V) 2.5 2 VIN=2.3V VIN=2.5V VIN=3.0V VIN=4.0V 1.5 1 0.5 0 3 2.5 VIN=3.3V VIN=3.5V VIN=4.0V VIN=5.0V 2 1.5 1 0.5 0 0 100 200 300 400 500 0 Output Current IOUT(mA) 100 R1113Z401B 400 500 R1113Z501B 6 Output Voltage VOUT(V) Output Voltage VOUT(V) 300 Output Current IOUT(mA) 5 4 VIN=4.3V VIN=4.5V VIN=5.0V VIN=6.0V 3 2 1 5 VIN=5.3V VIN=5.5V VIN=6.0V VIN=7.0V 4 3 2 1 0 0 0 100 200 300 400 500 0 Output Current IOUT(mA) 2) Output Voltage vs. Input Voltage 100 200 300 400 500 Output Current IOUT(mA) Topt=25°C R1113Z201B R1113Z301B 3.2 Output Voltage VOUT(V) 2.2 Output Voltage VOUT(V) 200 2 1.8 1.6 1.4 IOUT=1mA IOUT=30mA IOUT=50mA 1.2 1 3 2.8 2.6 2.4 IOUT=1mA IOUT=30mA IOUT=50mA 2.2 2 1 2 3 4 5 Input Voltage VIN(V) 6 7 1 2 3 4 5 6 7 Input Voltage VIN(V) 9 R1113Z R1113Z401B R1113Z501B 5.2 Output Voltage VOUT(V) Output Voltage VOUT(V) 4.2 4 3.8 3.6 3.4 IOUT=1mA IOUT=30mA IOUT=50mA 3.2 3 5 IOUT=1mA IOUT=30mA IOUT=50mA 4.8 4.6 4.4 4.2 4 1 2 3 4 5 6 7 1 Input Voltage VIN(V) 2 3 4 5 6 7 Input Voltage VIN(V) 3) Dropout Voltage vs. Output Current R1113Z201B R1113Z301B 0.6 Dropout Voltage VDIF(V) Dropout Voltage VDIF(V) 0.6 0.5 Topt=-40˚C Topt=25˚C Topt=85˚C 0.4 0.3 0.2 0.1 0.0 0.5 Topt=-40˚C Topt=25˚C Topt=85˚C 0.4 0.3 0.2 0.1 0.0 0 50 100 150 0 Output Current IOUT(mA) R1113Z401B 150 0.6 Dropout Voltage VDIF(V) Dropout Voltage VDIF(V) 100 R1113Z501B 0.6 0.5 Topt=-40˚C Topt=25˚C Topt=85˚C 0.4 0.3 0.2 0.1 0.0 0.5 Topt=-40˚C Topt=25˚C Topt=85˚C 0.4 0.3 0.2 0.1 0.0 0 50 100 Output Current IOUT(mA) 10 50 Output Current IOUT(mA) 150 0 50 100 Output Current IOUT(mA) 150 R1113Z 4) Output Voltage vs. Temperature R1113Z201B R1113Z301B VIN=3.0V, IOUT=30mA VIN=4.0V, IOUT=30mA 3.06 2.03 Output Voltage VOUT(V) Output Voltage VOUT(V) 2.04 2.02 2.01 2.00 1.99 1.98 1.97 1.96 -50 -25 0 25 50 75 3.04 3.02 3.00 2.98 2.96 2.94 -50 100 -25 0 Temperature Topt(˚C) R1113Z401B R1113Z501B Output Voltage VOUT(V) Output Voltage VOUT(V) 4.06 4.04 4.02 4.00 3.98 3.96 3.94 0 25 50 75 100 5.10 5.08 5.06 5.04 5.02 5.00 4.98 4.96 4.94 4.92 4.90 -50 -25 Temperature Topt(˚C) 5) Supply Current vs. Input Voltage 100 0 25 50 75 100 6 7 Temperature Topt(˚C) Topt=25°C R1113Z201B R1113Z301B 100 Supply Current ISS(µA) 100 Supply Current ISS(µA) 75 VIN=6.0V, IOUT=30mA 4.08 -25 50 Temperature Topt(˚C) VIN=5.0V, IOUT=30mA 3.92 -50 25 80 60 40 20 0 80 60 40 20 0 1 2 3 4 5 Input Voltage VIN(V) 6 7 1 2 3 4 5 Input Voltage VIN(V) 11 R1113Z R1113Z401B R1113Z501B 100 Supply Current ISS(µA) Supply Current ISS(µA) 100 80 60 40 20 0 80 60 40 20 0 1 2 3 4 5 6 7 1 2 Input Voltage VIN(V) 3 4 5 6 7 Input Voltage VIN(V) 6) Supply Current vs. Temperature R1113Z201B R1113Z301B VIN=3.0V VIN=4.0V 200 Supply Current ISS(µA) Supply Current ISS(µA) 200 150 100 50 0 -50 -25 0 25 50 75 150 100 50 0 -50 100 -25 0 25 50 Temperature Topt(˚C) Temperature Topt(˚C) R1113Z401B R1113Z501B VIN=5.0V Supply Current ISS(µA) Supply Current ISS(µA) 200 150 100 50 -25 0 25 50 Temperature Topt(˚C) 12 100 VIN=6.0V 200 0 -50 75 75 100 150 100 50 0 -50 -25 0 25 50 Temperature Topt(˚C) 75 100 R1113Z 7) Dropout Voltage vs. Set Output Voltage R1113Zxx1B Dropout Voltage VDIF(V) 0.5 25mA 50mA 100mA 150mA 0.4 0.3 0.2 0.1 0.0 0.0 1.0 2.0 3.0 4.0 5.0 Set Output Voltage VREG(V) 8) Ripple Rejection vs. Frequency R1113Z201B R1113Z301B VIN=3.0V+0.5Vp-p, COUT=ceramic 4.7µF VIN=4.0V+0.5Vp-p, COUT=ceramic 2.2µF 90 Ripple Rejection RR(dB) Ripple Rejection RR(dB) 120 100 80 60 IOUT=1mA IOUT=30mA IOUT=50mA 40 20 0 0.1 1 10 80 70 60 50 40 IOUT=1mA IOUT=30mA IOUT=50mA 30 20 10 0 0.1 100 Frequency f(kHz) R1113Z401B R1113Z501B Ripple Rejection RR(dB) Ripple Rejection RR(dB) 70 80 70 60 50 40 IOUT=1mA IOUT=30mA IOUT=50mA 10 0 0.1 100 VIN=6.0V+0.5Vp-p, COUT=ceramic 2.2µF 90 20 10 Frequency f(kHz) VIN=5.0V+0.5Vp-p, COUT=ceramic 2.2µF 30 1 1 10 Frequency f(kHz) 100 60 50 40 30 20 10 0 0.1 IOUT=1mA IOUT=30mA IOUT=50mA 1 10 100 Frequency f(kHz) 13 R1113Z 9) Ripple Rejection vs. Input Voltage (DC bias) R1113Z301B R1113Z301B IOUT=30mA, COUT=ceramic 2.2µF 90 80 80 70 Ripple Rejection RR(dB) Ripple Rejection RR(dB) IOUT=1mA, COUT=ceramic 2.2µF 70 60 50 40 f=400Hz f=1kHz f=10kHz 30 20 10 0 3.1 3.2 3.3 3.4 3.5 Input Voltage VIN(V) 60 50 40 f=400Hz f=1kHz f=10kHz 30 20 10 0 3.1 3.2 3.3 3.4 Input Voltage VIN(V) R1113Z301B IOUT=50mA, COUT=ceramic 2.2µF Ripple Rejection RR(dB) 80 70 60 50 40 f=400Hz f=1kHz f=10kHz 30 20 10 0 3.1 3.2 3.3 3.4 3.5 Input Voltage VIN(V) 10) Input Transient Response R1113Z201B VIN VOUT 14 Topt=25°C VIN=3.0V↔4.0V IOUT=30mA CIN =none COUT=4.7µF tr/tf=5µs 3.5 R1113Z R1113Z301B Topt=25°C VIN=4.0V↔5.0V IOUT=30mA CIN=none COUT=2.2µF tr/tf=5µs VIN VOUT R1113Z401B Topt=25°C VIN=5.0V↔6.0V IOUT=30mA CIN=none COUT=2.2µF tr/tf=5µs VIN VOUT R1113Z501B VIN Topt=25°C VIN=6.0V↔7.0V IOUT=30mA CIN=none COUT=2.2µF tr/tf=5µs VOUT 15 R1113Z 11) Load Transient Response R1113Z201B Topt=25°C IOUT=50mA↔100mA VIN=3.0V CIN=2.2µF COUT=4.7µF tr/tf=5µs IOUT VOUT R1113Z301B Topt=25°C IOUT=50mA↔100mA VIN=4.0V CIN=2.2µF COUT=2.2µF tr/tf=5µs IOUT VOUT R1113Z401B IOUT VOUT 16 Topt=25°C IOUT=50mA↔100mA VIN=5.0V CIN=2.2µF COUT=2.2µF tr/tf=5µs R1113Z R1113Z501B Topt=25°C IOUT=50mA↔100mA VIN=6.0V CIN=2.2µF COUT=2.2µF tr/tf=5µs IOUT VOUT TECHNICAL NOTES When using these ICs, consider the following points: In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For this purpose, use a capacitor COUT with good frequency characteristics and ESR (Equivalent Series Resistance) of which is in the range described as follows: 4 VOUT CE R1113Zxx1B 3 VIN Ceramic Cap. 2 Ceramic Cap. VIN GND 1 S.A. ESR Spectrum Analyzer IOUT Measuring Circuit for white noise; R1113Zxx1B 17 R1113Z The relations between IOUT (Output Current) and ESR of an output capacitor are shown below. The conditions when the white noise level is under 40µV (Avg.) are marked as the hatched area in the graph. (Note: If additional ceramic capacitors are connected to the Output Pin with Output capacitor for phase compensation, the operation might be unstable. Because of this, test these ICs with as same external components as ones to be used on the PCB.) <Measurement conditions> (1) VIN=VOUT+1V (2) Frequency Band: 10Hz to 1MHz (3) Temperature: 25°C R1113Z201B R1113Z201B COUT=4.7µF, CIN=2.2µF 100 100 10 10 1 1 ESR (Ω) ESR (Ω) COUT=2.2µF, CIN=2.2µF 0.1 0.01 0.1 0.01 0.001 0.001 0 30 60 90 120 150 0 30 60 IOUT(mA) R1113Z301B R1113Z301B 100 10 10 1 1 0.1 0.01 120 150 COUT=4.7µF, CIN=2.2µF 100 ESR (Ω) ESR (Ω) COUT=2.2µF, CIN=2.2µF 0.1 0.01 0.001 0.001 0 30 60 90 IOUT(mA) 18 90 IOUT(mA) 120 150 0 30 60 90 IOUT(mA) 120 150