RICOH R1126N281D

R1126N SERIES
LOW NOISE 150mA LDO REGULATOR
NO. EA-130-0512
OUTLINE
The R1126N Series are CMOS-based voltage regulator ICs with high output voltage accuracy, low supply
current, low on Resistance, and high ripple rejection. Each of these ICs consists of a voltage reference unit, an
error amplifier, resistor-net for voltage setting, a short current limit circuit, a chip enable circuit, and so on.
These ICs perform with low dropout voltage and the chip-enable function. The supply current at no load of this
IC is only 10µA, and the line transient response and the load transient response of the R1126N Series are
excellent, thus these ICs are very suitable for the power supply for hand-held communication equipment.
The supply current at no load of R1126x Series is remarkably reduced compared with R1114x Series. The
mode change signal to reduce the supply current is not necessary. The output voltage accuracy is also improved.
(±1.5%)
The output voltage of these ICs is fixed with high accuracy. Since the package for these ICs is SOT-23-5
therefore high density mounting of the ICs on boards is possible.
R1116N Series that a pin configuration differs from R1126N Series are available.
FEATURES
•
•
•
•
•
•
•
•
•
•
•
•
Low Supply Current ............................................................. Typ. 10µA
Standby Current ................................................................... Typ. 0.1µA
Input Voltage Range ............................................................ 1.8V to 6.0V
Output Voltage Range.......................................................... 1.5V to 4.0V
Low Dropout Voltage............................................................ Typ. 0.29V (IOUT=150mA,VOUT=2.8V)
High Ripple Rejection .......................................................... Typ. 70dB (f=1kHz, VOUT=3.0V)
Typ. 53dB (f=10kHz)
High Output Voltage Accuracy ............................................. ±1.5% (1.5V <
= VOUT <
= 3.0V), ±2.0% (VOUT>3.0V)
Low Temperature-Drift Coefficient of Output Voltage........... Typ. ±100ppm/°C
Excellent Line Regulation .................................................... Typ. 0.02%/V
Small Packages ................................................................. SOT-23-5
Built-in Fold Back Protection Circuit .................................... Typ. 40mA (Current at short mode)
Ceramic capacitors are recommended to be used with this IC ... CIN=COUT=1.0µF (Ceramic)
APPLICATIONS
•
•
•
•
Power source for portable communication equipment.
Power source for portable music player.
Power source for electrical appliances such as cameras, VCRs and camcorders.
Power source for battery-powered equipment.
1
R1126N
BLOCK DIAGRAMS
R1126Nxx1B
VDD
R1126Nxx1D
VOUT
VDD
Vref
VOUT
Vref
Current Limit
CE
Current Limit
GND
CE
SELECTION GUIDE
The output voltage, version, and the taping type for the ICs can be selected at the user’s request.
The selection can be made with designating the part number as shown below;
R1126Nxx1x-xx
↑ ↑
a b
Code
a
b
c
d
2
←Part Number
↑ ↑
c d
Contents
Designation of Package Type:
N: SOT-23-5
Setting Output Voltage (VOUT):
Stepwise setting with a step of 0.1V in the range of 1.5V to 4.0V is possible.
Exceptions:2.85V=R1126N281x5, 1.85V=R1126N181x5
Designation of Active Type:
B: active high type
D: active high, with auto discharge
Designation of Taping Type:
Ex. TR (refer to Taping Specifications; TR type is the standard direction.)
GND
R1126N
PIN CONFIGURATION
SOT-23-5
5
4
(mark side)
1
2
3
PIN DESCRIPTION
•
R1126N
Pin No.
Symbol
Description
1
CE
2
GND
3
NC
No Connection
4
VOUT
Output pin
5
VDD
Input Pin
Chip Enable Pin
Ground Pin
ABSOLUTE MAXIMUM RATINGS
Symbol
Item
Rating
Unit
VIN
Input Voltage
6.5
V
VCE
Input Voltage (CE Pin)
6.5
V
VOUT
Output Voltage
−0.3~VIN+0.3
V
IOUT
Output Current
160
mA
420
mW
∗
PD
Power Dissipation (SOT-23-5)
Topt
Operating Temperature Range
−40~85
°C
Tstg
Storage Temperature Range
−55~125
°C
∗
) For Power Dissipation, please refer to PACKAGE INFORMATION to be described.
3
R1126N
ELECTRICAL CHARACTERISTICS
•
R1126Nxx1B/D
Topt=25°C
Symbol
Conditions
VOUT
Output Voltage
VIN = Set VOUT+1V
1mA <
= IOUT <
= 30mA
IOUT
Output Current
VIN−VOUT=1.0V
Min.
<
=
Typ.
Max.
3.0V
×0.985
×1.015
VOUT > 3.0V
×0.980
×1.020
VOUT
150
Unit
V
mA
VIN=Set VOUT+1V
1mA <
= IOUT <
= 150mA
28
55
1.5V <
= VOUT < 2.0V
33
66
2.0V <
= VOUT < 3.0V
35
80
3.0V <
= VOUT
Refer to the ELECTRICAL CHARACTERISTICS
by OUTPUT VOLTAGE
∆VOUT/
∆IOUT
Load Regulation
VDIF
Dropout Voltage
ISS
Supply Current
VIN=Set VOUT+1V, IOUT=0mA
10
18
µA
Supply Current (Standby)
VIN=Set VOUT+1V, VCE=VDD
0.1
1.0
µA
Line Regulation
IOUT=30mA
Set VOUT+0.5V
0.02
0.10
%/V
RR
Ripple Rejection
f=1kHz
f=10kHz
Ripple 0.2Vp-p
VIN−VOUT=1.0V,IOUT=30mA
VIN
Input Voltage
Istandby
∆VOUT/
∆VIN
∆VOUT/
∆Topt
<
=
VIN
<
=
6.0V
70
53
1.8
mV
dB
6.0
V
Output Voltage
Temperature Coefficient
IOUT=30mA
−40°C <
= Topt
Ilim
Short Current Limit
VOUT=0V
IPD
CE Pull-down Current
VCEH
CE Input Voltage “H”
1.0
6.0
V
VCEL
CE Input Voltage “L”
0.0
0.3
V
en
RLOW
4
Item
<
=
85°C
±100
ppm
/°C
40
mA
0.5
µA
Output Noise
BW=10Hz to 100kHz
30
µVrms
On Resistance of Nch Tr.
for auto-discharge
(Only for D version)
VCE=0V
70
Ω
R1126N
•
ELECTRICAL CHARACTERISTICS by OUTPUT VOLTAGE
Topt = 25°C
Dropout Voltage VDIF (V)
Output Voltage
VOUT (V)
Condition
VOUT = 1.5V
Typ.
Max.
0.54
0.86
0.50
0.75
0.46
0.70
0.44
0.65
1.5V < VOUT
<
=
1.6V
1.6V < VOUT
<
=
1.7V
1.7V < VOUT
<
=
2.0V
2.0V < VOUT
<
=
2.7V
0.37
0.56
2.7V < VOUT
<
=
4.0V
0.29
0.46
IOUT=150mA
TYPICAL APPLICATIONS
VDD
C1
VOUT
R1126N
Series
CE
C2
GND
(External Components)
C2 Ceramic 1.0µF Ex. Murata GRM155B30J105KE18B
Kyocera CM05X5R105K06AB
C1 Ceramic 1.0µF
5
R1126N
TEST CIRCUITS
VDD
VOUT
R1126N
Series
C1
CE
V
C2
VOUT
↓
IOUT
GND
C1=Ceramic 1.0µF
C2=Ceramic 1.0µF
Fig.1 Standard test Circuit
VDD
A
ISS
VOUT
R1126N
Series
C1
CE
C2
GND
C1=Ceramic 1.0µF
C2=Ceramic 1.0µF
Fig.2 Supply Current Test Circuit
VDD
Pulse
Generator
VOUT
R1126N
Series
CE
C2
↓
IOUT
GND
C2=Ceramic 1.0µF
Fig.3 Ripple Rejection, Line Transient Response Test Circuit
6
R1126N
TYPICAL CHARACTERISTICS
1) Output Voltage vs. Output Current (Topt=25°C)
R1126N151x
R1126N281x
3.0
1.4
Output Voltage VOUT(V)
Output Voltage VOUT(V)
1.6
1.2
1.0
0.8
0.6
VIN=1.8V
VIN=2.0V
VIN=2.5V
VIN=3.5V
0.4
0.2
0
2.5
2.0
1.5
1.0
VIN=3.1V
VIN=3.5V
VIN=3.8V
0.5
0
0
100
200
300
400
Output Current IOUT(mA)
500
0
100
200
300
400
Output Current IOUT(mA)
500
R1126N401x
Output Voltage VOUT(V)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
VIN=4.3V
VIN=4.5V
VIN=5.0V
1.0
0.5
0
0
100
200
300
400
Output Current IOUT(mA)
500
2) Output Voltage vs. Input Voltage (Topt=25°C)
R1126N151x
R1126N281x
3.0
1.4
Output Voltage VOUT(V)
Output Voltage VOUT(V)
1.6
1.2
1.0
0.8
0.6
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
0.4
0.2
0
2.5
2.0
1.5
1.0
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
0.5
0
0
1
2
3
4
Input Voltage VIN(V)
5
6
0
1
2
3
4
Input Voltage VIN(V)
5
6
7
R1126N
R1126N401x
Output Voltage VOUT(V)
5.0
4.0
3.0
2.0
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
1.0
0
0
1
2
3
4
Input Voltage VIN(V)
5
6
3) Supply Current vs. Input Voltage (Topt=25°C)
R1126N151x
R1126N281x
20
Supply Current ISS(µA)
Supply Current ISS(µA)
10
8
5
3
0
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0
Input Voltage VIN(V)
R1126N401x
Supply Current ISS(µA)
25
20
15
10
5
0
4.0
8
4.5
5.0
5.5
Input Voltage VIN(V)
6.0
15
10
5
0
2.8
3.6
4.4
5.2
Input Voltage VIN(V)
6.0
R1126N
4) Output Voltage vs. Temperature
R1126N281x
2.83
1.52
2.82
Output Voltage VOUT(V)
Output Voltage VOUT(V)
R1126N151x
1.53
1.51
1.50
1.49
1.48
1.47
1.46
-50
-25
0
25
50
75
Temperature Topt(°C)
2.81
2.80
2.79
2.78
2.77
2.76
-50
100
-25
0
25
50
75
Temperature Topt(°C)
100
R1126N401x
Output Voltage VOUT(V)
4.06
4.04
4.02
4.00
3.98
3.96
3.94
3.92
-50
-25
0
25
50
75
Temperature Topt(°C)
100
5) Supply Current vs. Temperature
R1126N281x
16
16
14
14
Supply Current ISS(µA)
Supply Current ISS(µA)
R1126N151x
12
10
8
6
4
2
0
-50
-25
0
25
50
75
Temperature Topt(°C)
100
12
10
8
6
4
2
0
-50
-25
0
25
50
75
Temperature Topt(°C)
100
9
R1126N
R1126N401x
Supply Current ISS(µA)
16
14
12
10
8
6
4
2
0
-50
-25
0
25
50
75
Temperature Topt(°C)
100
6) Dropout Voltage vs. Temperature
R1126N151x
R1126N161x
700
600
500
400
300
85°C
25°C
-40°C
200
100
Dropout Voltage VDIF(mV)
Dropout Voltage VDIF(mV)
700
0
600
500
400
300
85°C
25°C
-40°C
200
100
0
0
25
50
75
100 125
Output Current IOUT(mA)
150
0
R1126N171x
600
500
400
300
200
85°C
25°C
-40°C
100
0
Dropout Voltage VDIF(mV)
Dropout Voltage VDIF(mV)
150
R1126N181x
600
500
400
300
200
85°C
25°C
-40°C
100
0
0
10
25
50
75
100 125
Output Current IOUT(mA)
25
50
75
100 125
Output Current IOUT(mA)
150
0
25
50
75
100 125
Output Current IOUT(mA)
150
R1126N
R1126N211x
R1126N281x
400
Dropout Voltage VDIF(mV)
Dropout Voltage VDIF(mV)
500
400
300
200
85°C
25°C
-40°C
100
0
350
300
250
200
150
85°C
25°C
-40°C
100
50
0
0
25
50
75
100 125
Output Current IOUT(mA)
150
0
25
50
75
100 125
Output Current IOUT(mA)
150
R1126N401x
Dropout Voltage VDIF(mV)
300
250
200
150
100
85°C
25°C
-40°C
50
0
0
25
50
75
100 125
Output Current IOUT(mA)
150
7) Dropout Voltage vs. Set Output Voltage (Topt=25°C)
Dropout Voltage VDIF(mV)
700
150mA
100mA
50mA
30mA
10mA
600
500
400
300
200
100
0
1
2
3
Set Output Voltage VREG(V)
4
11
R1126N
8) Ripple Rejection vs. Input Bias Voltage (Topt=25°C, CIN = none, COUT = 1µF)
R1126N281x
R1126N281x
70
70
60
50
40
30
20
10
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
50
40
30
10
R1126N281x
60
50
40
30
1kHz
10kHz
100kHz
20
10
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
60
50
40
30
10
0
2.9
3.5
3.0
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
3.5
R1126N281x
R1126N281x
Ripple Vp-p=0.2V, IOUT=50mA
Ripple Vp-p=0.5V, IOUT=50mA
80
70
70
60
50
40
30
1kHz
10kHz
100kHz
3.0
1kHz
10kHz
100kHz
20
80
0
2.9
3.5
Ripple Vp-p=0.5V, IOUT=30mA
70
10
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
R1126N281x
70
20
3.0
Ripple Vp-p=0.2V, IOUT=30mA
80
3.0
1kHz
10kHz
100kHz
20
0
2.9
3.5
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
3.0
60
80
0
2.9
Ripple Rejection RR(dB)
1kHz
10kHz
100kHz
Ripple Rejection RR(dB)
80
0
2.9
12
Ripple Vp-p=0.5V, IOUT=1mA
80
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
3.5
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
Ripple Vp-p=0.2V, IOUT=1mA
60
50
40
30
1kHz
10kHz
100kHz
20
10
0
2.9
3.0
3.1
3.2
3.3
3.4
Input Voltage VIN(V)
3.5
R1126N
9) Ripple Rejection vs. Frequency (CIN=none)
R1126N151x
R1126N151x
VIN=2.7VDC+0.5Vp-p,COUT=2.2µF
90
90
80
80
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
VIN=2.7VDC+0.5Vp-p,COUT=1µF
70
60
50
40
30
20
10
0
0.1
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
1
10
Frequency f(kHz)
70
60
50
40
30
20
10
0
0.1
100
R1126N281x
80
80
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
90
70
60
50
40
10
0
0.1
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
1
10
Frequency f(kHz)
70
60
50
40
30
20
10
0
0.1
100
R1126N401x
80
80
Ripple Rejection RR(dB)
Ripple Rejection RR(dB)
90
70
60
50
40
10
0
0.1
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
1
10
Frequency f(kHz)
1
10
Frequency f(kHz)
100
VIN=5VDC+0.5Vp-p,COUT=2.2µF
90
20
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
R1126N401x
VIN=5VDC+0.5Vp-p,COUT=1µF
30
100
VIN=3.8VDC+0.5Vp-p,COUT=2.2µF
90
20
1
10
Frequency f(kHz)
R1126N281x
VIN=3.8VDC+0.5Vp-p,COUT=1µF
30
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
100
70
60
50
40
30
20
10
0
0.1
IOUT=1mA
IOUT=30mA
IOUT=50mA
IOUT=150mA
1
10
Frequency f(kHz)
100
13
R1126N
10) Input Transient Response (IOUT=30mA, CIN= none, tr=tf=5µs, COUT = Ceramic 1µF)
R1126N151x
R1126N281x
3
2.84
1.53
2
1.52
1
1.51
0
Output Voltage
1.50
1.49
1.48
6
5
Input Voltage
2.83
4
3
2.82
2
2.81
Output Voltage
2.80
1
2.79
0
Input Voltage VIN(V)
Input Voltage
2.85
Output Voltage VOUT(V)
1.54
4
Input Voltage VIN(V)
Output Voltage VOUT(V)
1.55
2.78
0 10 20 30 40 50 60 70 80 90 100
Time t(µs)
0 10 20 30 40 50 60 70 80 90 100
Time t(µs)
R1126N401x
7
4.04
4.03
6
Input Voltage
5
4
4.02
3
4.01
Output Voltage
4.00
2
3.99
1
3.98
0
0 10 20 30 40 50 60 70 80 90 100
Time t(µs)
Input Voltage VIN(V)
Output Voltage VOUT(V)
4.05
11) Load Transient Response (tr=tf=0.5µs, CIN=Ceramic 1µF)
R1126N151x
R1126N151x
60
1.8
30
0
1.7
Output Current 0mA↔30mA
1.6
1.5
Output Voltage
1.4
1.3
60
1.8
30
0
1.7
Output Current 0mA↔30mA
1.6
1.5
Output Voltage
1.4
1.3
0 10 20 30 40 50 60 70 80 90 100
Time t(µs)
14
1.9
0 10 20 30 40 50 60 70 80 90 100
Time t(µs)
Output Current IOUT(mA)
1.9
Output Voltage VOUT(V)
VIN=2.5V,COUT=Ceramic 2.2µF
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=2.5V,COUT=Ceramic 1.0µF
R1126N
R1126N151x
R1126N151x
20
1.8
10
0
1.7
Output Current 1mA↔10mA
1.6
Output Voltage
1.5
1.4
1.3
1.9
20
1.8
10
0
1.7
Output Current 1mA↔10mA
1.6
Output Voltage
1.5
1.4
1.3
0 10 20 30 40 50 60 70 80 90 100
Time t(µs)
0 10 20 30 40 50 60 70 80 90 100
Time t(µs)
R1126N151x
R1126N151x
150
1.8
100
1.7
50
Output Current 50mA↔100mA
1.6
0
Output Voltage
1.5
1.4
1.3
1.9
150
1.8
100
1.7
50
Output Current 50mA↔100mA
1.6
0
Output Voltage
1.5
1.4
Output Current IOUT(mA)
1.9
Output Voltage VOUT(V)
VIN=2.5V,COUT=Ceramic 2.2µF
Output Current IOUT(mA)
1.3
0
2
4
6
8 10 12 14 16 18 20
Time t(µs)
0
R1126N281x
30
Output Voltage
2.8
2.7
2.6
0
Output Voltage VOUT(V)
3.1
Output Current IOUT(mA)
60
2.9
6
8 10 12 14 16 18 20
Time t(µs)
VIN=3.8V,COUT=Ceramic 2.2µF
3.2
Output Current 0mA↔30mA
4
R1126N281x
VIN=3.8V,COUT=Ceramic 1.0µF
3.0
2
3.2
60
3.1
30
3.0
Output Current 0mA↔30mA
2.9
2.8
Output Voltage
2.7
0
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=2.5V,COUT=Ceramic 1.0µF
Output Voltage VOUT(V)
Output Current IOUT(mA)
1.9
Output Voltage VOUT(V)
VIN=2.5V,COUT=Ceramic 2.2µF
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=2.5V,COUT=Ceramic 1.0µF
2.6
0
10 20 30 40 50 60 70 80 90
Time t(µs)
0 10 20 30 40 50 60 70 80 90 100
Time t(µs)
15
R1126N
R1126N281x
R1126N281x
3.1
10
3.0
0
Output Current 1mA↔10mA
2.9
Output Voltage
2.8
2.7
Output Voltage VOUT(V)
20
Output Current IOUT(mA)
2.6
3.2
20
3.1
10
3.0
2.9
Output Voltage
2.8
2.7
2.9
10 20 30 40 50 60 70 80 90
Time t(µs)
0 10 20 30 40 50 60 70 80 90 100
Time t(µs)
R1126N281x
R1126N281x
3.2
150
3.1
100
3.0
50
Output Current 50mA↔100mA
2.9
0
Output Voltage
2.8
2.7
Output Voltage VOUT(V)
VIN=3.8V,COUT=Ceramic 2.2µF
Output Current IOUT(mA)
Output Voltage VOUT(V)
VIN=3.8V,COUT=Ceramic 1.0µF
2.6
3.2
150
3.1
100
3.0
2.9
0
Output Voltage
2.8
2.7
2.6
0
2
4
6
8 10 12 14 16 18 20
Time t(µs)
0
R1126N401x
30
4.1
Output Voltage
4.0
3.9
3.8
0
Output Voltage VOUT(V)
4.3
Output Current IOUT(mA)
60
Output Current 0mA↔30mA
4
6
8 10 12 14 16 18 20
Time t(µs)
R1126N401x
4.4
4.2
2
VIN=5.0V,COUT=Ceramic 2.2µF
VIN=5.0V,COUT=Ceramic 1.0µF
Output Voltage VOUT(V)
50
Output Current 50mA↔100mA
Output Current IOUT(mA)
0
4.4
60
4.3
30
4.2
Output Current 0mA↔30mA
4.1
Output Voltage
4.0
3.9
3.8
0
16
0
Output Current 1mA↔10mA
10 20 30 40 50 60 70 80 90
Time t(µs)
0 10 20 30 40 50 60 70 80 90 100
Time t(µs)
0
Output Current IOUT(mA)
Output Voltage VOUT(V)
3.2
Output Current IOUT(mA)
VIN=3.8V,COUT=Ceramic 2.2µF
VIN=3.8V,COUT=Ceramic 1.0µF
R1126N
R1126N401x
R1126N401x
4.3
10
4.2
0
Output Current 1mA↔10mA
4.1
Output Voltage
4.0
3.9
Output Voltage VOUT(V)
20
Output Current IOUT(mA)
3.8
4.4
20
4.3
10
4.2
4.1
Output Voltage
4.0
3.9
3.8
0
10 20 30 40 50 60 70 80 90
Time t(µs)
0 10 20 30 40 50 60 70 80 90 100
Time t(µs)
R1126N401x
R1126N401x
4.4
150
4.3
100
4.2
50
Output Current 50mA↔100mA
4.1
0
Output Voltage
4.0
3.9
3.8
Output Voltage VOUT(V)
VIN=5.0V,COUT=Ceramic 2.2µF
Output Current IOUT(mA)
VIN=5.0V,COUT=Ceramic 1.0µF
Output Voltage VOUT(V)
0
Output Current 1mA↔10mA
4.4
150
4.3
100
4.2
50
Output Current 50mA↔100mA
4.1
0
Output Voltage
4.0
3.9
Output Current IOUT(mA)
Output Voltage VOUT(V)
4.4
Output Current IOUT(mA)
VIN=5.0V,COUT=Ceramic 2.2µF
VIN=5.0V,COUT=Ceramic 1.0µF
3.8
0
2
4
6
8 10 12 14 16 18 20
Time t(µs)
0
2
4
6
8 10 12 14 16 18 20
Time t(µs)
12) Turn-on/off speed with CE pin (D version) (CIN=Ceramic 1.0µF, COUT=Ceramic 1.0µF)
4
3
2
3
1
Output Voltage
2
1
IOUT=0mA
IOUT=30mA
IOUT=150mA
0
-5
0
5 10 15 20 25 30 35 40 45
Time t(µs)
0
VIN=2.5V
6
Output Voltage VOUT(V)
CE Input Voltage
5
4
CE Input Voltage VCE(V)
6
Output Voltage VOUT(V)
R1126N151D
VIN=2.5V
5
CE Input Voltage
3
IOUT=0mA
IOUT=30mA
IOUT=150mA
4
3
4
2
2
1
0
1
Output Voltage
0
-40
0
CE Input Voltage VCE(V)
R1126N151D
40 80 120 160 200 240 280 320 360
Time t(µs)
17
R1126N
CE Input Voltage
8
3
7
6
2
5
1
4
0
Output Voltage
2
IOUT=0mA
IOUT=30mA
IOUT=150mA
1
0
-5
0
VIN=3.8V
2
1
5
4
0
Output Voltage
3
2
0
-40
0
6
12
4
8
2
0
6
Output Voltage
IOUT=0mA
IOUT=30mA
IOUT=150mA
0
0
5 10 15 20 25 30 35 40 45
Time t(µs)
Output Voltage VOUT(V)
14
10
-5
18
8
CE Input Voltage VCE(V)
Output Voltage VOUT(V)
CE Input Voltage
2
40 80 120 160 200 240 280 320 360
Time t(µs)
R1126N401D
VIN=5.0V
4
IOUT=0mA
IOUT=30mA
IOUT=150mA
1
R1126N401D
12
3
CE Input Voltage
6
5 10 15 20 25 30 35 40 45
Time t(µs)
14
4
VIN=5.0V
8
6
10
4
CE Input Voltage
2
8
0
6
IOUT=0mA
IOUT=30mA
IOUT=150mA
4
2
0
Output Voltage
-40
0
40 80 120 160 200 240 280 320 360
Time t(µs)
CE Input Voltage VCE(V)
3
Output Voltage VOUT(V)
7
4
CE Input Voltage VCE(V)
8
Output Voltage VOUT(V)
R1126N281D
VIN=3.8V
CE Input Voltage VCE(V)
R1126N281D
R1126N
TECHNICAL NOTES
VDD
VOUT
R1126N
Series
C1
CE
C2
GND
(External Components)
C2 Ceramic 1.0µF Ex. Murata GRM155B30J105KE18B
Kyocera CM05X5R105K06AB
C1 Ceramic 1.0µF
When using these ICs, consider the following points:
1.Mounting on PCB
Make VDD and GND lines sufficient. If their impedance is high, noise pickup or unstable operation may result.
Connect a capacitor with a capacitance value as much as 1.0µF or more as C1 between VDD and GND pin, and
as close as possible to the pins.
Set external components, especially the output capacitor, as close as possible to the ICs, and make wiring as
short as possible.
2.Phase Compensation
In these ICs, phase compensation is made for securing stable operation even if the load current is varied. For
this purpose, use a capacitor C2 with good frequency characteristics and ESR (Equivalent Series Resistance).
(Note: If additional ceramic capacitors are connected with parallel to the output pin with an output capacitor for
phase compensation, the operation might be unstable. Because of this, test these ICs with as same external
components as ones to be used on the PCB.)
If you use a tantalum type capacitor and ESR value of the capacitor is large, output might be unstable.
Evaluate your circuit with considering frequency characteristics.
Depending on the capacitor size, manufacturer, and part number, the bias characteristics and temperature
characteristics are different. Evaluate the circuit with actual using capacitors.
19
R1126N
ESR vs. Output Current
When using these ICs, consider the following points:
The relations between IOUT (Output Current) and ESR of an output capacitor are shown below.
The conditions when the white noise level is under 40µV (Avg.) are marked as the hatched area in the graph.
Measurement conditions
VIN=VOUT+1V
COUT: GRM155B30J105KE18B
Frequency Band: 10Hz to 2MHz
Temperature: −40°C to 25°C
R1126N151x
R1126N281x
VIN=1.52V to 6.5V, CIN=COUT=1.0µF
100
VIN=2.82V to 6.5V
100
Topt=85°C
Topt=85°C
10
ESR(Ω)
ESR(Ω)
10
Topt=-40°C
1
0.1
0.1
0.01
0.01
0
30
60
90
120
Output Current IOUT(mA)
150
R1126N401x
VIN=4.02V to 6.5V
100
Topt=85°C
ESR(Ω)
10
Topt=-40°C
1
0.1
0.01
0
20
Topt=-40°C
1
30
60
90
120
Output Current IOUT(mA)
150
0
30
60
90
120
Output Current IOUT(mA)
150
PACKAGE INFORMATION
•
PE-SOT-23-5-0510
SOT-23-5 (SC-74A)
Unit: mm
PACKAGE DIMENSIONS
2.9±0.2
+0.2
1.1 −0.1
1.9±0.2
(0.95)
(0.95)
2
0 to 0.1
3
+0.1
0.15 −0.05
0.4±0.1
0.2 MIN.
1
2.8±0.3
4
+0.2
1.6 −0.1
5
0.8±0.1
3.2
3.5±0.05
2.0±0.05
3.3
4.0±0.1
2.0MAX.
∅1.1±0.1
TR
User Direction of Feed
TAPING REEL DIMENSIONS
(1reel=3000pcs)
2±0.5
21±0.8
∅60 +1
0
∅180 0
−1.5
∅ 13±0.2
11.4±1.0
9.0±0.3
8.0±0.3
4.0±0.1
+0.1
φ1.5 0
0.3±0.1
1.75±0.1
TAPING SPECIFICATION
PACKAGE INFORMATION
PE-SOT-23-5-0510
POWER DISSIPATION (SOT-23-5)
This specification is at mounted on board. Power Dissipation (PD) depends on conditions of mounting on board.
This specification is based on the measurement at the condition below:
(Power Dissipation (SOT-23-5) is substitution of SOT-23-6.)
Measurement Conditions
Standard Land Pattern
Environment
Mounting on Board (Wind velocity=0m/s)
Board Material
Glass cloth epoxy plactic (Double sided)
Board Dimensions
40mm × 40mm × 1.6mm
Copper Ratio
Top side : Approx. 50% , Back side : Approx. 50%
Through-hole
φ0.5mm × 44pcs
Measurement Result
(Topt=25°C,Tjmax=125°C)
Standard Land Pattern
Free Air
Power Dissipation
420mW
250mW
Thermal Resistance
θja=(125−25°C)/0.42W=263°C/W
400°C/W
500
40
On Board
420
400
Free Air
300
250
40
Power Dissipation PD(mW)
600
200
100
0
0
25
50
75 85 100
Ambient Temperature (°C)
125
150
Power Dissipation
Measurement Board Pattern
IC Mount Area Unit : mm
RECOMMENDED LAND PATTERN
0.7 MAX.
1.0
2.4
0.95 0.95
1.9
(Unit: mm)
MARK INFORMATION
ME-R1126N-0509
R1126N SERIES MARK SPECIFICATION
• SOT-23-5 (SC-74A)
1
•
2
3
4
1
,
2
4
,
5
,
3
: Product Code (refer to Part Number vs. Product Code)
: Lot Number ( 4 ,
5
Part Number vs. Product Code
Part Number
Product Code
1
2
3
R1126N151B
2
1
5
R1126N161B
2
1
6
R1126N171B
2
1
R1126N181B
2
R1126N191B
2
R1126N201B
R1126N211B
Part Number
Product Code
1
2
3
R1126N151D
3
1
5
R1126N161D
3
1
6
7
R1126N171D
3
1
7
1
8
R1126N181D
3
1
8
1
9
R1126N191D
3
1
9
2
2
0
R1126N201D
3
2
0
2
2
1
R1126N211D
3
2
1
R1126N221B
2
2
2
R1126N221D
3
2
2
R1126N231B
2
2
3
R1126N231D
3
2
3
R1126N241B
2
2
4
R1126N241D
3
2
4
R1126N251B
2
2
5
R1126N251D
3
2
5
R1126N261B
2
2
6
R1126N261D
3
2
6
R1126N271B
2
2
7
R1126N271D
3
2
7
R1126N281B
2
2
8
R1126N281D
3
2
8
R1126N291B
2
2
9
R1126N291D
3
2
9
R1126N301B
2
3
0
R1126N301D
3
3
0
R1126N311B
2
3
1
R1126N311D
3
3
1
R1126N321B
2
3
2
R1126N321D
3
3
2
R1126N331B
2
3
3
R1126N331D
3
3
3
R1126N341B
2
3
4
R1126N341D
3
3
4
R1126N351B
2
3
5
R1126N351D
3
3
5
R1126N361B
2
3
6
R1126N361D
3
3
6
R1126N371B
2
3
7
R1126N371D
3
3
7
R1126N381B
2
3
8
R1126N381D
3
3
8
R1126N391B
2
3
9
R1126N391D
3
3
9
R1126N401B
2
4
0
R1126N401D
3
4
0
R1126N181B5
2
4
1
R1126N181D5
3
4
1
R1126N281B5
2
4
2
R1126N281D5
3
4
2
5
: alphabetic character)