PRELIMINARY Preliminary PRELIMINARY CMOS SRAM K6R1004C1B-C Document Title 256Kx4 Bit (with OE) High Speed Static RAM(5.0V Operating), Revolutionary Pin out. Revision History Rev No. History Draft Data Rev. 0.0 Initial release with Design Target. Apr. 1st, 1997 Design Target Rev.1.0 Release to Preliminary Data Sheet. 1.1. Replace Design Target to Preliminary. Jun. 1st, 1997 Preliminary Rev.2.0 Release to Final Data Sheet. 2.1. Delete Preliminary. 2.2. Delete L-version. 2.3. Delete Data Retention Characteristics and Waveform. 2.4. Delete Industrial Temperature Range Part. 2.5. Delete TSOP2 Package. 2.6. Add Capacitive load of the test environment in A.C test load. 2.7. Change D.C characteristics. Previous spec. Changed spec. Items (8/10/12ns part) (8/10/12ns part) ICC 150/140/130mA 150/145/140mA ISB 30mA 50mA Feb. 25th, 1998 Final Remark The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 2.0 February 1998 PRELIMINARY Preliminary PRELIMINARY CMOS SRAM K6R1004C1B-C 256K x 4 Bit (with OE)High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 8,10,12ns(Max.) • Low Power Dissipation Standby (TTL) : 50mA(Max.) (CMOS) : 10mA(Max.) Operating K6R1004C1B-8 : 150mA(Max.) K6R1004C1B-10 : 145mA(Max.) K6R1004C1B-12 : 140mA(Max.) • Single 5.0V±10% Power Supply • TTL Compatible Inputs and Outputs • I/O Compatible with 3.3V Device • Fully Static Operation - No Clock or Refresh required • Three State Outputs • Center Power/Ground Pin Configuration • Standard Pin Configuration K6R1004C1B-J : 32-SOJ-400 The K6R1004C1B is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words by 4 bits. The K6R1004C1B uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNG′s advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R1004C1B is packaged in a 400 mil 32-pin plastic SOJ. PIN CONFIGURATION(Top View) FUNCTIONAL BLOCK DIAGRAM Clk Gen. Pre-Charge Circuit A0 A2 A3 A4 A5 Row Select A1 Memory Array 256 Rows 1024x4 Columns A6 A7 N.C 1 32 A17 A0 2 31 A16 A1 3 30 A15 A2 4 29 A14 A3 5 28 A13 6 27 7 26 I/O4 Vcc 8 Vss 9 24 Vcc I/O2 10 23 I/O3 WE 11 22 A12 A4 12 21 A11 A5 13 20 A10 A6 14 19 A9 A7 15 18 A8 25 Vss SOJ 17 N.C N.C 16 I/O1 ~ I/O4 Data Cont. OE CS I/O1 I/O Circuit & Column Select CLK Gen. PIN FUNCTION A8 A9 A10 A11 A12 A13 A14 A15 A16 A17 Pin Name A0 - A17 CS WE OE WE Write Enable CS Chip Select OE Output Enable I/O1 ~ I/O 4 -2- Pin Function Address Inputs Data Inputs/Outputs VCC Power(+5.0V) VSS Ground N.C No Connection Rev 2.0 February 1998 PRELIMINARY Preliminary PRELIMINARY CMOS SRAM K6R1004C1B-C ABSOLUTE MAXIMUM RATINGS* Parameter Symbol Voltage on Any Pin Relative to VSS Rating Unit VIN, VOUT -0.5 to 7.0 V VCC -0.5 to 7.0 V Voltage on VCC Supply Relative to VSS Power Dissipation Storage Temperature PD 1.0 W TSTG -65 to 150 °C TA 0 to 70 °C Operating Temperature * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS(TA=0 to 70°C) Parameter Symbol Min Typ Max Unit Supply Voltage VCC 4.5 5.0 5.5 V Ground VSS 0 0 0 V Input High Voltage VIH 2.2 - VCC+0.5** V Input Low Voltage VIL -0.5* - 0.8 V * V IL(Min) = -2.0V a.c(Pulse Width ≤ 6ns) for I ≤ 20mA. ** VIH (Max) = VCC + 2.0V a.c (Pulse Width ≤ 6ns) for I ≤ 20mA. DC AND OPERATING CHARACTERISTICS(TA=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified) Min Max Unit Input Leakage Current Parameter ILI VIN=VSS to VCC -2 2 µA Output Leakage Current ILO CS=VIH or OE=VIH or WE=VIL VOUT=VSS to VCC -2 2 µA Operating Current ICC Min. Cycle, 100% Duty CS=VIL, VIN=VIH or VIL, IOUT=0mA mA Standby Current Symbol Test Conditions 8ns - 150 10ns - 145 12ns - 140 ISB Min. Cycle, CS=VIH - 50 ISB1 f=0MHz, CS ≥VCC-0.2V, VIN≥VCC-0.2V or VIN≤0.2V - 10 mA Output Low Voltage Level VOL IOL=8mA - 0.4 V Output High Voltage Level VOH IOH=-4mA 2.4 - V - 3.95 V VOH1* IOH1=-0.1mA * VCC=5.0V±5%, Temp.=25°C. CAPACITANCE*(TA=25°C, f=1.0MHz) Symbol Test Conditions MIN Max Unit Input/Output Capacitance Item CI/O VI/O=0V - 8 pF Input Capacitance CIN VIN=0V - 6 pF * Capacitance is sampled and not 100% tested. -3- Rev 2.0 February 1998 PRELIMINARY Preliminary PRELIMINARY CMOS SRAM K6R1004C1B-C AC CHARACTERISTICS(TA=0 to 70°C, VCC=5.0V±10%, unless otherwise noted.) TEST CONDITIONS Parameter Value Input Pulse Levels 0V to 3V Input Rise and Fall Times 3ns Input and Output timing Reference Levels 1.5V Output Loads See below Output Loads(B) for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ Output Loads(A) +5.0V RL = 50Ω DOUT 480Ω VL = 1.5V ZO = 50Ω DOUT 30pF* 255Ω * Capacitive Load consists of all components of the test environment. 5pF* * Including Scope and Jig Capacitance READ CYCLE Parameter Symbol K6R1004C1B-8 Min K6R1004C1B-10 Max Min K6R1004C1B-12 Max Min Max Unit Read Cycle Time tRC 8 - 10 - 12 - ns Address Access Time tAA - 8 - 10 - 12 ns Chip Select to Output tCO - 8 - 10 - 12 ns Output Enable to Valid Output tOE - 4 - 5 - 6 ns Chip Enable to Low-Z Output Output Enable to Low-Z Output Chip Disable to High-Z Output tLZ 3 - 3 - 3 - ns tOLZ 0 - 0 - 0 - ns tHZ 0 4 0 5 0 6 ns Output Disable to High-Z Output tOHZ 0 4 0 5 0 6 ns Output Hold from Address Change tOH 3 - 3 - 3 - ns Chip Selection to Power Up Time tPU 0 - 0 - 0 - ns Chip Selection to Power DownTime tPD - 8 - 10 - 12 ns -4- Rev 2.0 February 1998 PRELIMINARY Preliminary PRELIMINARY CMOS SRAM K6R1004C1B-C WRITE CYCLE Parameter Symbol K6R1004C1B-8 K6R1004C1B-10 K6R1004C1B-12 Min Max Min Max Min Max Unit Write Cycle Time tWC 8 - 10 - 12 - ns Chip Select to End of Write tCW 6 - 7 - 8 - ns Address Set-up Time tAS 0 - 0 - 0 - ns Address Valid to End of Write tAW 6 - 7 - 8 - ns Write Pulse Width(OE High) tWP 6 - 7 - 8 - ns Write Pulse Width(OE Low) tWP1 8 - 10 - 12 - ns Write Recovery Time tWR 0 - 0 - 0 - ns Write to Output High-Z tWHZ 0 4 0 5 0 6 ns Data to Write Time Overlap tDW 4 - 5 - 6 - ns Data Hold from Write Time tDH 0 - 0 - 0 - ns End Write to Output Low-Z tOW 3 - 3 - 3 - ns TIMMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL , WE=VIH) tRC Address tAA tOH Data Out Valid Data Previous Valid Data TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) tRC Address tAA tCO CS tHZ(3,4,5) tOHZ tOE OE tOLZ tLZ(4,5) Data out tOH Valid Data VCC ICC Current ISB tPU tPD 50% 50% -5- Rev 2.0 February 1998 PRELIMINARY Preliminary PRELIMINARY CMOS SRAM K6R1004C1B-C NOTES(READ CYCLE) 1. WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to V OH or VOL levels. 4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device. 5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with CS=VIL. 7. Address valid prior to coincident with CS transition low. 8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock) tWC Address tWR(5) tAW OE tCW(3) CS tWP(2) tAS(4) WE tDW Data in High-Z tDH Valid Data tOHZ(6) High-Z(8) Data out TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed) tWC Address tAW tWR(5) tCW(3) CS tAS(4) tWP1(2) WE tDW Data in High-Z tDH Valid Data tWHZ(6) tOW High-Z(8) Data out -6- (10) (9) Rev 2.0 February 1998 PRELIMINARY Preliminary PRELIMINARY CMOS SRAM K6R1004C1B-C TIMING WAVEFORM OF WRITE CYCLE(3) (CS=Controlled) tWC Address tAW tWR(5) tCW(3) CS tWP(2) tAS(4) WE tDW High-Z Data in Valid Data tLZ High-Z tWHZ(6) High-Z(8) High-Z Data out tDH NOTES(WRITE CYCLE) 1. All write cycle timing is referenced from the last valid address to the first transition address. 2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ; A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write to the end of write. 3. tCW is measured from the later of CS going low to end of write. 4. tAS is measured from the address valid to the beginning of write. 5. tWR is measured from the end of write to the address change. tWR applied in case a write ends as CS or WE going high. 6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase of the output must not be applied because bus contention can occur. 7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. 8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state. 9. Dout is the read data of the new address. 10.When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be applied. FUNCTIONAL DESCRIPTION CS WE OE Mode I/O Pin Supply Current H X X* Not Select High-Z ISB, ISB1 L H H Output Disable High-Z ICC L H L Read DOUT ICC L L X Write DIN ICC * X means Don′t Care. -7- Rev 2.0 February 1998 PRELIMINARY Preliminary PRELIMINARY CMOS SRAM K6R1004C1B-C Units:millimeters/Inches PACKAGE DIMENSIONS 32-SOJ-400 #17 10.16 0.400 #32 11.18 ±0.12 0.440 ±0.005 9.40 ±0.25 0.370 ±0.010 0.20 #1 #16 0.008 0.69 MIN 0.027 21.36 MAX 0.841 20.95 ±0.12 0.825 ±0.005 ( 1.30 ) 0.051 ( 1.30 ) 0.051 ( 0.95 ) 0.0375 +0.10 -0.05 +0.004 0.017 -0.002 0.43 1.27 0.050 +0.10 -0.05 +0.004 -0.002 0.71 0.028 -8- 3.76 MAX 0.148 0.10 MAX 0.004 +0.10 -0.05 +0.004 -0.002 Rev 2.0 February 1998