2SA2181 Ordering number : EN8527 PNP Epitaxial Planar Silicon Transistor 2SA2181 50V / 15A High-Speed Switching Applications Applications • High-speed switching applications (switching regulator, driver circuit). Features • • • • Adoption of MBIT processes. Large current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO --50 V Collector-to-Emitter Voltage VCEO --50 V Emitter-to-Base Voltage VEBO --6 V IC --15 A ICP IB --20 A Collector Current Collector Current (Pulse) Base Current Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C --3 A 2 W 25 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current ICBO IEBO hFE1 hFE2 DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol fT Cob Conditions VCB=--40V, IE=0A VEB=--4V, IC=0A VCE=--2V, IC=--330mA VCE=--2V, IC=--10A VCE=--10V, IC=--700mA Ratings min typ max 200 Unit --10 µA --10 µA 500 50 VCB=--10V, f=1MHz 120 MHz 140 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2505FA MS IM TB-00001826 No.8527-1/4 2SA2181 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Fall Time min --50 V See specified Test Circuit. 300 ns See specified Test Circuit. 45 ns IB1 IB2 OUTPUT INPUT 2.8 VR RB + 16.0 50Ω 18.1 100µF RL + 470µF VBE=5V 0.7 1 2 3 2.4 1 : Base 2 : Collector 3 : Emitter 2.55 SANYO : TO-220ML IC -- VCE --8 --7 5 --4 --50mA --6 --5 --4 ---30 --250m 200m 0mA A A --1 80 mA --9 --7 --20mA Collector Current, IC -- A --11 --10 IC -- VCE --8 mA --250 --200mA A m 0 0 --3 --150mA A 0m 5 --3 A --100mA A -400m m 0 --800 --700 -600m mA mA A --50 0mA --12 VCC= --25V IC=20IB1= --20IB2= --7A 14.0 5.6 1.6 1.2 0.75 --13 V ns 7.2 3.5 V 80 4.5 3.2 --14 V --50 Switching Time Test Circuit 10.0 --15 mV --6 PW=20µs D.C.≤1% 2.55 --500 --1.2 IE=--100µA, IC=0A See specified Test Circuit. tf Unit max --250 IC=--100µA, IE=0A IC=--1mA, RBE=∞ Package Dimensions unit : mm 7508-002 Collector Current, IC -- A typ IC=--7.5A, IB=--375mA IC=--7.5A, IB=--375mA ton tstg Storage Time Ratings Conditions --6 --5 A 0m --10 A 20m A --80m --60mA --1 A 0m --14 A 60m --1 --40mA --4 --20mA --3 --10mA --2 --3 --2 --1 --1 0 IB=0mA 0 --0.5 --1.0 --1.5 Collector-to-Emitter Voltage, VCE -- V --2.0 IT09987 IB=0mA 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Collector-to-Emitter Voltage, VCE -- V IT09988 No.8527-2/4 2SA2181 IC -- VBE --16 DC Current Gain, hFE --10 --8 --6 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 VC = E 0 --2 --50 V V --2 0m V --1V 0m DC Current Gain, hFE 2 3 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 2 100 7 5 3 2 5 7 --1.0 2 3 5 7 --10 2 5 7 7 5 3 2 3 2 °C 75 = C Ta 5° --2 °C 25 --0.1 7 5 Ta= --25°C 2 2 3 5 7 --1.0 2 3 5 7 --10 IT09992 VCE(sat) -- IC IC / IB=20 5 3 2 --0.1 7 5 3 2 C Ta= --25° 75°C 25°C 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 IT09994 VBE(sat) -- IC IC / IB=20 --1.0 7 5 25°C 5 7 --0.1 3 2 --0.01 --0.01 3 Collector Current, IC -- A VCE(sat) -- IC 2 2 IT09993 IC / IB=50 3 100 7 5 --0.01 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 3 2 IT09900 2 --0.01 Collector-to-Base Voltage, VCB -- V 5 7 --10 3 7 3 3 3 5 --1.0 5 2 2 Collector Current, IC -- A f=1MHz 10 --0.1 5 7 --1.0 VCE= --10V IT09991 7 3 fT -- IC 10 --0.01 5 Cob -- VCB 1000 2 7 3 10 --0.01 2 3 5 7 --0.1 1000 5 5 3 Collector Current, IC -- A Gain-Bandwidth Product, fT -- MHz 7 2 IT09989 Ta=25°C 7 5 10 --0.01 --1.4 hFE -- IC 100 7 2 Base-to-Emitter Voltage, VBE -- V 1000 100 3 0 0 2 75 °C 25 °C --25 °C --2 Ta=75°C 25°C --25°C 3 Ta = --4 Ta= 75° C 25° --25 C °C Collector Current, IC -- A 5 --12 3 VCE= --2V 7 --14 5 3 hFE -- IC 1000 VCE= --2V 2 --1.0 Ta= --25°C 7 5 25°C 75°C 3 75°C 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 2 3 IT09995 2 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 Collector Current, IC -- A 5 7 --10 2 3 IT09996 No.8527-3/4 2SA2181 Forward Bias A S O 5 s DC 3 2 op --1.0 7 5 Collector Dissipation, PC -- W 0m s 0µ 50 10 ms s 10 1m er ati on Collector Current, IC -- A IC= --15A --10 7 5 3 2 --0.1 7 5 3 2 Tc=25°C Single pulse --0.01 --0.1 2 3 2.0 1.5 No he at 1.0 sin k 0.5 0 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 IT09997 0 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT09985 PC -- Tc 30 Collector Dissipation, PC -- W PC -- Ta 2.5 ICP= --20A 3 2 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT09998 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2005. Specifications and information herein are subject to change without notice. PS No.8527-4/4