2SC3807C Ordering number : ENA0439 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers. Features • • • • • Large current capacity (IC=2A). Adoption of MBIT process. High DC current gain (hFE=1000 to 2000). Low collector-to-emitter saturation voltage (VCE(sat)≤0.5V). High VEBO (VEBO≥17V). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 30 V Collector-to-Emitter Voltage VCEO 25 V Emitter-to-Base Voltage VEBO 17 V IC 2 A Collector Current Collector Current (Pulse) ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C 4 A 1.2 W 15 W 150 °C --55 to +150 °C Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30707LA TI IM TC-00000055 No. A0439-1/4 2SC3807C Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max Collector Cutoff Current ICBO VCB=20V, IE=0A 0.1 µA Emitter Cutoff Current IEBO hFE1 VEB=10V, IC=0A 0.1 µA DC Current Gain VCE=5V, IC=500mA 1000 VCE=5V, IC=1A 2000 Gain-Bandwidth Product hFE2 fT 600 VCE=10V, IC=0.1A 260 Output Capacitance Cob VCB=10V, f=1MHz 24 Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) IC=1A, IB=20mA IC=1A, IB=20mA Collector-to-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO IC=10µA, IE=0A IC=1mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0A See specified Test Circuit. Collector-to-Base Breakdown Voltage Turn-ON Time ton tstg Storage Time Fall Time tf MHz pF 0.15 0.5 V 0.85 1.2 V 30 V 25 V 17 V 0.14 µs See specified Test Circuit. 0.8 µs See specified Test Circuit. 0.12 µs Package Dimensions Switching Time Test Circuit unit : mm (typ) 7517-002 8.0 4.0 IB2 2.0 INPUT VR 11.0 9.0 IB1 PW=20µs D.C.≤1% 2.7 OUTPUT RB RL 50Ω 1.5 + 100µF 3.0 1.6 0.8 + 470µF --5V 0.8 VCC=10V 0.5 7IB1= --7IB2=IC=700mA 15.5 0.6 2 1 : Emitter 2 : Collector 3 : Base 3 1.2 1 2.4 4.8 SANYO : TO-126LP IC -- VCE 1.8 6.0 1.0mA 1.2 1.0 0.8 0.5mA 0.6 0.4 1.6 1.4 1.2 1.0 0.8 0.6 --25°C 1.4 2.0mA mA 20.0mA Collector Current, IC -- A 1.6 A mA A 5.0 4.0m 3.0m VCE=5V 5°C 25°C 0m 7. 10 1.8 IC -- VBE 2.0 Ta= 7 .0m A Collector Current, IC -- A A 2.0 0.4 0.2 0.2 IB=0mA 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Collector-to-Emitter Voltage, VCE -- V 1.8 0 2.0 IT11142 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT11143 No. A0439-2/4 2SC3807C hFE -- IC 5 Gain-Bandwidth Product, f T -- MHz DC Current Gain, hFE 3 Ta=75°C 25°C 2 --25°C 1000 7 5 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 2 7 1.0 2 3 5 7 10 2 Collector-to-Base Voltage, VCB -- V 3 3 5 7 0.1 2 3 5 7 1.0 2 3 IT11145 VCE(sat) -- IC IC / IB=50 3 2 0.1 7 5 75 = Ta 3 2 °C 5 --2 25 °C °C 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A 3 IT11147 ASO 10 7 5 s 1m 1.0 7 ati er 5 on 3 s s 25°C 75°C 0m op 7 2 m Ta= --25°C 10 IC=2A 10 1.0 ICP=4A 3 DC Collector Current, IC -- A 2 5 2 IT11146 IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 3 7 5 0.01 5 VBE(sat) -- IC 3 7 5 Collector Current, IC -- A Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Output Capacitance, Cob -- pF 3 5 100 5 5 3 2 7 7 2 3 IT11144 f=1MHz 10 0.1 VCE=10V 5 2 0.01 3 Cob -- VCB 100 f T -- IC 7 VCE=5V 3 2 0.1 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 7 5 1.0 3 PC -- Ta 1.4 2 3 5 7 2 10 3 Collector-to-Emitter Voltage, VCE -- V IT11148 5 ITR06041 PC -- Tc 16 15 14 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 1.2 1.0 No 0.8 he at sin k 0.6 0.4 0.2 12 10 8 6 4 2 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11172 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11173 No. A0439-3/4 2SC3807C SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of March, 2007. Specifications and information herein are subject to change without notice. PS No. A0439-4/4