Ordering number : ENN7667 2SC5951 NPN Triple Diffused Planar Silicon Transistor 2SC5951 Switching Regulator Applications Features • • High breakdown voltage. High-speed switching. Wide ASO. Adoption of MBIT process. unit : mm 2042B [2SC5951] 8.0 4.0 1.0 1.0 3.3 1.5 7.5 3.0 11.0 • Package Dimensions 1.4 • 15.5 3.0 1.6 0.8 0.8 0.7 0.75 1 Specifications 1 : Emitter 2 : Collector 3 : Base 3 1.7 2.4 4.8 Absolute Maximum Ratings at Ta=25°C Parameter 2 Symbol SANYO : TO-126ML Conditions Ratings Unit Collector-to-Base Voltage VCBO 700 V Collector-to-Emitter Voltage VCEO 400 V Emitter-to-Base Voltage VEBO 8 V 1.5 A Collector Current IC Collector Current (Pulse) Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg PW≤300µs, duty cycle≤10% Tc=25°C 3 A 0.7 A 1.5 W 10 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO Conditions Ratings min typ max VCB=400V, IE=0 VEB=5V, IC=0 Unit 10 µA 10 µA Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61504CB TS IM TA-100821 No.7667-1/4 2SC5951 Continued from preceding page. Parameter Symbol Ratings Conditions min typ hFE1 hFE2 hFE3 VCE=5V, IC=0.1A 20 VCE=5V, IC=0.7A 10 VCE=5V, IC=1mA 10 fT VCE=10V, IC=0.1A 20 Cob VCB=10V, f=1MHz 10 Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) IC=0.7A, IB=0.14A IC=0.7A, IB=0.14A DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CBO V(BR)CEO IC=1mA, IE=0 IC=5mA, RBE=∞ Emitter-to-Base Breakdown Voltage V(BR)EBO IE=1mA, IC=0 IC=1A, IB1=0.2A, IB2=--0.4A,RL=200Ω, VCC=200V Turn-On Time ton tstg Storage Time Fall Time 50 MHz pF 0.8 V 1.5 V 700 V 400 V 8 V µs 0.5 IC=1A, IB1=0.2A, IB2=--0.4A,RL=200Ω, VCC=200V IC=1A, IB1=0.2A, IB2=--0.4A,RL=200Ω, VCC=200V tf Unit max 2.5 µs 0.25 µs Switching Time Test Circuit IB1 PW=20µs D.C.≤1% INPUT OUTPUT IB2 RB VR RL 50Ω + 470µF + 100µF VBE= --5V IC -- VCE 150mA 1.2 100mA 1.0 50mA 0.8 0.6 20mA 10mA 0.4 1.5 1.0 20 °C 25° C --40 °C 1.4 VCE=5V Ta= 1 350mA 300mA 250mA 200mA 500mA Collector Current, IC -- A 1.6 IC -- VBE 2.0 A 400mA 450m Collector Current, IC -- A 2.0 1.8 VCC=200V 0.5 0.2 IB=0 1 2 3 5 4 7 6 Collector-to-Emitter Voltage, VCE -- V 10 Ta=120°C 25°C 7 5 3 --40°C 2 10 7 5 3 2 1.0 0.001 2 3 5 7 0.01 2 3 5 7 0.1 2 3 Collector Current, IC -- A 5 7 1.0 2 3 IT06215 0.6 0.8 1.0 1.2 1.4 IT06214 VCE(sat) -- IC 10 7 5 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 100 0.4 Base-to-Emitter Voltag, VBE -- V VCE=5V 2 0.2 0 IT06213 hFE -- IC 3 DC Current Gain, hFE 0 9 8 IC / IB=5 3 2 1.0 7 5 --40° C 0 Ta=1 20°C 25°C 0 3 2 120 0.1 7 5 3 2 0.01 0.01 °C --40 °C Ta=25°C 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT06216 No.7667-2/4 2SC5951 VBE(sat) -- IC 5 Switching Time, SW Time -- µs 2 Ta= --40°C 1.0 7 120°C 5 3 2 0.1 0.01 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A Collector Current, IC -- A ICP=3A P C =1 DC 0.1 7 5 3 2 op 0µ s s er ati on 0.01 7 5 3 2 2 3 7 5 tf 3 2 5 7 10 2 3 5 7 100 2 3 Collector-to-Emitter Voltage, VCE -- V 3 5 7 2 1.0 3 IT06218 3 2 1.0 7 5 3 2 0.1 7 5 Tc=25°C IB2= --0.3A L=500µH, Single pulse 0.01 10 5 7 1000 IT06219 2 3 5 7 2 100 3 5 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 2.0 2 Reverse Bias A S O 3 2 Tc=25°C Single pulse 0.001 1.0 1.0 10 7 5 0µ 1 10 ms m s 0W tst g 2 Collector Current, IC -- A 10 30 1.0 7 5 3 2 3 IT06217 P T= IC=1.5A 5 0.1 0.1 3 Forward Bias A S O 10 7 5 3 2 IC / IB1=5 IB2 / IB1=2 R load 7 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V IC / IB=5 3 25°C SW Time -- IC 10 7 1000 IT06220 PC -- Tc 12 Collector Dissipation, PC -- W Collector Dissipation, PC -- W 1.8 1.6 1.5 1.4 1.2 No 1.0 he at sin k 0.8 0.6 0.4 10 8 6 4 2 0.2 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06221 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT06222 No.7667-3/4 2SC5951 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2004. Specifications and information herein are subject to change without notice. PS No.7667-4/4