2SC6099 Ordering number : ENA0435 SANYO Semiconductors DATA SHEET 2SC6099 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 120 V Collector-to-Emitter Voltage VCES 120 V Collector-to-Emitter Voltage VCEO 100 V Emitter-to-Base Voltage VEBO 6.5 V 2 A Collector Current IC Collector Current (Pulse) ICP Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 3 400 A mA 0.8 W 15 W 150 °C --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Collector Cutoff Current ICBO Emitter Cutoff Current IEBO VCB=80V, IE=0A VEB=4V, IC=0A DC Current Gain hFE VCE=5V, IC=100mA Ratings min typ Unit max 300 1 µA 1 µA 600 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82306 / 62006EA MS IM TB-00002424 No. A0435-1/4 2SC6099 Continued from preceding page. Symbol Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) V(BR)CBO Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton tstg tf Storage Time Fall Time Ratings Conditions min 300 IC=1A, IB=100mA IC=1A, IB=100mA 110 165 0.9 1.2 IC=10µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ IE=10µA, IC=0A ns 1.5 5.5 7.0 1.5 0.5 0.5 2.5 0.8 1 2 3 0 to 0.2 0.6 0.5 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP ns 2.3 6.5 5.0 7.0 5.5 V ns 1.2 2.3 V 6.5 40 4 7.5 0.8 1.6 2.3 V 100 See specified Test Circuit. 0.5 3 120 40 2.3 2 V 1100 0.85 1 V 120 See specified Test Circuit. Package Dimensions 0.6 pF mV See specified Test Circuit. unit : mm 7003-003 0.85 0.7 Unit MHz 13 unit : mm 7518-003 4 max VCE=10V, IC=300mA VCB=10V, f=1MHz Package Dimensions 6.5 5.0 typ 1.2 Parameter 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA Switching Time Test Circuit IB1 PW=20µs D.C.≤1% INPUT OUTPUT IB2 VR10 RB RL 50Ω + 100µF VBE= --5V + 470µF VCC=50V 10IB1= --10IB2=IC=0.5A No. A0435-2/4 2SC6099 IC -- VCE A 40mA 1.4 20mA 1.2 1.0 10mA 0.8 5mA 0.6 2mA 0.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Collector-to-Emitter Voltage, VCE -- V 1.0 0.8 0.6 0 0 1.0 Gain-Bandwidth Product, f T -- MHz Ta=75°C 25°C --25°C 2 100 7 5 3 2 0.01 2 3 5 7 2 0.1 3 5 7 1.0 Collector Current, IC -- A 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 10 7 5 100 7 5 3 2 3 5 7 2 0.1 3 5 7 2 1.0 IT11118 VCE(sat) -- IC IC / IB=10 0.1 7 5 75 Ta= 3 2 25° 0.01 °C 5°C --2 C 7 5 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 3 0.01 5 7 100 IT11119 Collector Current, IC -- A 25°C 5 2 3 5 7 0.1 75°C 2 3 5 Collector Current, IC -- A 7 1.0 2 3 IT11121 7 0.1 2 3 5 7 1.0 2 <10µs ICP=3A 10 IC=2A 1.0 7 5 3 2 10 DC 50 ms 1m 0m s 0µ s s op era tio 0.1 7 5 3 2 0.01 7 5 3 2 3 IT11128 s 0µ 7 5 10 2 Ta= --25°C 3 ASO 7 5 3 2 IC / IB=10 1.0 2 Collector Current, IC -- A VBE(sat) -- IC 3 3 0.01 2 2 2 3 0.1 3 3 3 1.2 IT11126 VCE=10V Collector Current, IC -- A f=1MHz 5 1.0 5 IT11127 7 0.8 f T -- IC 2 0.01 3 Cob -- VCB 100 0.6 7 7 3 0.4 Base-to-Emitter Voltage, VBE -- V VCE=5V 5 0.2 IT11125 hFE -- IC 1000 DC Current Gain, hFE 1.2 0.2 IB=0mA 0 Output Capacitance, Cob -- pF 1.4 0.4 0.2 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 1.6 --25°C 100 1.6 VCE=5V 1.8 25°C mA 80m Collector Current, IC -- A Collector Current, IC -- A 1.8 IC -- VBE 2.0 60mA Ta=7 5 °C 2.0 n Ta=25°C Single Pulse 0.001 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 IT11129 Collector-to-Emitter Voltage, VCE -- V No. A0435-3/4 2SC6099 ASO 3 0µ m 1.0 7 5 s 0.8 s 1m 10 0m s s 3 DC 2 on rati ope Collector Current, IC -- A 10 IC=2A µs 100 50 2 0.1 7 5 3 2 2 3 0.7 0.6 0.5 0.4 0.3 0.2 0.1 Tc=25°C Single Pulse 0.01 0.1 PC -- Ta 0.9 <10µs ICP=3A Collector Dissipation, PC -- W 5 0 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- 5 7 100 2 V IT11130 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11131 PC -- Tc 17.5 Collector Dissipation, PC -- W 15.0 12.5 10.0 7.50 5.00 2.50 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11132 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. PS No. A0435-4/4