SANYO 2SC6106

2SC6106
Ordering number : ENA0878
SANYO Semiconductors
DATA SHEET
2SC6106
NPN Triple Diffused Planar Silicon Transistor
Switching Regulator Applications
Features
•
•
•
•
High breakdown voltage and high reliability.
Ultrahigh-speed switching.
Wide ASO.
Adoption of MBIT process.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
1000
V
Collector-to-Emitter Voltage
VCEO
500
V
Emitter-to-Base Voltage
VEBO
7
V
IC
4
A
Collector Current
Collector Current (Pulse)
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
PW≤300µs, duty cycle≤10%
Tc=25°C
8
A
1
W
30
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
Conditions
ICBO
IEBO
VCB=500V, IE=0A
VEB=5V, IC=0A
hFE1
hFE2
VCE=5V, IC=0.3A
VCE=5V, IC=2.0A
fT
Cob
VCE=10V, IC=0.3A
VCB=10V, f=1MHz
Ratings
min
typ
Unit
max
40
10
µA
10
µA
80
8
18
MHz
40
pF
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
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Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
70407KB TI IM TC-00000387 No. A0878-1/4
2SC6106
Continued from preceding page.
Symbol
Ratings
Conditions
min
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
VBE(sat)
IC=1.5A, IB=0.3A
IC=1.5A, IB=0.3A
Collector-to-Emitter Breakdown Voltage
V(BR)CBO
V(BR)CEO
IC=1mA, IE=0A
IC=5mA, RBE=∞
Emitter-to-Base Breakdown Voltage
V(BR)EBO
ton
tstg
IE=1mA, IC=0A
VCC=200V, 5IB1=--2.5IB2=IC=2A, RL=100Ω
VCC=200V, 5IB1=--2.5IB2=IC=2A, RL=100Ω
tf
VCC=200V, 5IB1=--2.5IB2=IC=2A, RL=100Ω
Collector-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
Package Dimensions
Package Dimensions
unit : mm (typ)
7518-003
unit : mm (typ)
7003-003
5.5
0.85
0.7
1
2
2.3
V
8
2.3
3.0
µs
0.3
µs
3
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
3
µs
2.5
0.8
2
0.6
0.5
V
0.5
0.5
1
7.5
0.8
1.6
0.6
V
500
0.5
0.85
1.2
V
V
1000
1.5
1.5
7.0
4
5.5
4
1.0
1.5
2.3
6.5
5.0
0.5
Unit
max
7.0
2.3
6.5
5.0
typ
1.2
Parameter
1 : Base
2 : Collector
3 : Emitter
4 : Collector
1.2
2.3
2.3
SANYO : TP-FA
SANYO : TP
Switching Time Test Circuit
IB1
PW=20µs
D.C.≤1%
INPUT
OUTPUT
IB2
VR
RB
RL
100Ω
50Ω
+
470µF
+
100µF
VCC=200V
IC -- VCE
VCE=5V
200mA
2.5
2.0
100mA
1.5
50mA
20mA
1.0
3
2
1
0.5
IB=0mA
0
0
1
2
3
4
5
6
7
8
Collector-to-Emitter Voltage, VCE -- V
9
--40°C
300mA
3.0
Collector Current, IC -- A
Collector Current, IC -- A
3.5
IC -- VBE
4
500mA
400mA
25°C
4.0
Ta=
120
°C
VBE= --5V
0
10
IT12741
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
IT12742
No. A0878-2/4
2SC6106
hFE -- IC
DC Current Gain, hFE
7
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Ta=120°C
100
25°C
5
--40°C
3
2
10
7
5
3
2
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
3
2
1.0
7
5
3
2
7
5
C
0°
Ta= -4
0.1
--4
0°C
120°C
C
25°
25°C
2
3
5
7 0.1
2
3
5
7 1.0
2
Ta= --40°C
25°C
7
120°C
5
3
7
VCC=200V
IC/IB2= 5
IB2/IB1= 2.5
7
5
1.0
5
IT12744
SW Time -- IC
10
IC / IB=5
2
3
Collector Current, IC -- A
IT12743
Switching Time, SW Time -- µs
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
IC / IB=5
3
2
0.01
5 7
VBE(sat) -- IC
3
VCE(sat) -- IC
7
5
VCE=5V
Ta=1
20°C
2
tstg
3
2
1.0
7
5
3
2
tf
0.1
7
5
2
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
Collector Current, IC -- A
P
C=
s
W
10
1.0
7
5
s
1m
30
ms
tio
era
op
3
2
n
0.1
7
5
2
3
5 7 10
2
3
5 7 100
2
3
5
7
10
IT12746
3
2
1.0
7
5
Tc=25°C
IB2= --0.6A
L=500mH
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
Collector-to-Emitter Voltage, VCE -- V
IT12747
PC -- Ta
1.2
3
5
0.1
1.0
5 7 1000
Collector-to-Emitter Voltage, VCE -- V
2
1.0
7
2
Tc=25°C
Single pulse
0.01
1.0
7
Reverse Bias A S O
3
3
2
5
10
Collector Current, IC -- A
0µ
DC
Collector Current, IC -- A
<50µs
10
IC=4A
3
2
3
2
ICP=8A
10
7
5
2
Collector Current, IC -- A
Forward Bias A S O
2
2
IT12748
PC -- Tc
35
30
1.0
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
3
0.1
5 7 10
IT12745
0.8
No
he
at
0.6
sin
k
0.4
0.2
25
20
15
10
5
0
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT12749
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT12750
No. A0878-3/4
2SC6106
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products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd.
products described or contained herein.
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of July, 2007. Specifications and information herein are subject
to change without notice.
PS No. A0878-4/4