2SD2600 Ordering number : EN8564 SANYO Semiconductors DATA SHEET 2SD2600 NPN Triple Diffused Planar Silicon Darlington Transistor Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers, voltage regulator control. Features • • High DC current gain. Large current capacity and wide ASO. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 110 V Collector-to-Emitter Voltage VCEO 100 V Emitter-to-Base Voltage VEBO 6 V IC 8 A 12 A Collector Dissipation ICP PC Junction Temperature Tj Storage Temperature Tstg Collector Current Collector Current (Pulse) Tc=25°C 35 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Symbol ICBO IEBO hFE fT Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Turn-ON Time Storage Time Fall Time ton tstg tf Conditions VCB=80V, IE=0A VEB=5V, IC=0A VCE=3V, IC=4A Ratings min typ 1500 VCE=5V, IC=4A IC=4A, IB=8mA IC=4A, IB=8mA IC=5mA, IE=0A IC=50mA, RBE=∞ See specified test circuit. max Unit 0.1 mA 3.0 mA 4000 20 0.9 MHz 1.5 V 2.0 V 110 V 100 V 0.6 µs See specified test circuit. 4.8 µs See specified test circuit. 1.6 µs Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 73106IA MS IM TA-1084 No.8564-1/3 2SD2600 Package Dimensions Switching Time Test Circuit unit : mm (typ) 7002-003 OUTPUT PW=50µs DC≤1% 0.6 IB2 TUT INPUT IB1 2 VR 0.3 0.6 1.0 2.54 + 100µF 5.08 1 : Base 2 : Emitter 3 : Collector 6.2 5.2 7.8 2.5 10.0 6.0 50Ω 0.7 1.2 4.2 1.0 2.54 1 RL 12.5Ω RB 8.4 10.0 0.4 0.2 8.2 7.8 6.2 3 + 470µF VBE= --5V VCC=50V 500IB1= --500IB2=IC=4A SANYO : ZP Electrical Connection C B 6kΩ 200Ω E IC -- VCE From top 20mA 18mA 16mA 14mA 12mA 10mA 8mA 6mA 8 6 IC -- VCE 8 From top 2000µA 1800µA 1600µA 1400µA 1200µA A 4m Collecotr Current, IC -- A Collecotr Current, IC -- A 10 2mA 4 6 1000µA 800µA 4 600µA 400µA 2 2 200µA IB=0mA 0 0 1 2 3 1 2 DC Current Gain, hFE --40°C 25°C 0°C 2 5 IT03403 VCE=3V 0°C 12 Ta= 10000 7 5 4 4 hFE -- IC 2 VCE=3V 6 3 Collector-to-Emitter Voltage, VCE -- V IT03402 IC -- VBE Ta=1 2 Collector Current, IC -- A 0 5 Collector-to-Emitter Voltage, VCE -- V 8 IB=0µA 0 4 25° C 3 2 --40° C 1000 7 5 3 2 100 0 0.4 0.8 1.2 1.6 2.0 Base-to-Emitter Voltage, VBE -- V 2.4 IT03404 7 5 0.1 2 3 5 7 1.0 2 3 Collector Current, IC -- A 5 7 10 IT03405 No.8564-2/3 2SD2600 VCE(sat) -- IC 10 IC / IB=500 IC / IB=500 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 5 3 2 1.0 Ta= --40°C 25°C 7 120°C 5 5 3 2 Ta= --40°C 25°C 1.0 120°C 7 3 0.1 2 3 5 7 2 1.0 3 5 Collector Current, IC -- A 5 0.1 7 10 IT03406 2 3 5 2 1.0 3 5 7 10 IT03407 PC -- Tc 50 ICP=12A 7 Collector Current, IC -- A ASO 2 Tc=25°C 100 1m s 5 ms 10 ms IC=8A Collector Dissipation, PC -- W 10 3 2 1.0 DC op 5 ati er 3 on Collector Current, IC -- A VBE(sat) -- IC 10 2 0.1 40 30 20 10 5 3 2 1ms to 100ms : Single pulse 2 3 5 7 10 2 0 3 5 7 100 Collector-to-Emitter Voltage, VCE -- V 2 IT03408 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT03409 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2006. Specifications and information herein are subject to change without notice. PS No.8564-3/3