2SJ630 Ordering number : ENA0489 SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 2SJ630 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 1.8V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS --12 Gate-to-Source Voltage VGSS ±8 V ID --6 A Drain Current (DC) Drain Current (Pulse) IDP V PW≤10µs, duty cycle≤1% --24 A Mounted on a ceramic board (600mm2✕0.8mm) 1.5 W Allowable Power Dissipation PD 3.5 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ max Unit ID=--1mA, VGS=0V VDS=--12V, VGS=0V VGS=±6.4V, VDS=0V --12 VDS=--6V, ID=--1mA VDS=--6V, ID=--3A --0.3 Forward Transfer Admittance VGS(off) yfs RDS(on)1 RDS(on)2 ID=--3A, VGS=--4.5V ID=--1.5A, VGS=--2.5V 45 58 Static Drain-to-Source On-State Resistance 57 80 mΩ ID=--0.3A, VGS=--1.8V VDS=--6V, f=1MHz 78 112 mΩ Input Capacitance RDS(on)3 Ciss Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage V(BR)DSS Conditions IDSS IGSS Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr td(off) tf Rise Time Turn-OFF Delay Time Fall Time Marking : MD 5.7 V --10 µA ±10 µA --1.0 9.5 V S mΩ 940 pF 230 pF 180 pF See specified Test Circuit. 12 ns See specified Test Circuit. 143 ns See specified Test Circuit. 71 ns See specified Test Circuit. 89 ns VDS=--6V, f=1MHz VDS=--6V, f=1MHz Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 81006PA MS IM TC-00000120 No. A0489-1/4 2SJ630 Continued from preceding page. Parameter Symbol Ratings Conditions min typ Unit max Total Gate Charge Qg VDS=--6V, VGS=--4.5V, ID=--6A 11 nC Gate-to-Source Charge Qgs VDS=--6V, VGS=--4.5V, ID=--6A 1.6 nC Gate-to-Drain “Miller” Charge Qgd VDS=--6V, VGS=--4.5V, ID=--6A Diode Forward Voltage VSD IS=--6A, VGS=0V Package Dimensions 2.8 nC --0.95 --1.5 V Switching Time Test Circuit unit : mm (typ) 7007A-003 VDD= --6V VIN 0V --4.5V Top View 4.5 ID= --3A RL=2Ω VIN 1.5 1.6 D VOUT 1 2 G 4.0 1.0 2.5 PW=10µs D.C.≤1% 2SJ630 3 P.G 0.4 50Ω S 0.4 0.5 1.5 3.0 0.75 1 : Gate 2 : Drain 3 : Source SANYO : PCP Bottom View ID -- VDS --2. 5V --2. 0V --3.5 V VDS= --6V V --1 --8 .8 --1 ID -- VGS --9 .5V VGS= --1.0V --1 --4 --3 --2 --25 °C --2 --5 °C --3 --6 5°C V --4 Ta= 7 Drain Current, ID -- A --7 --4.5 --1 25 Drain Current, ID -- A --5 --3.0 V --6 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Drain-to-Source Voltage, VDS -- V --0.9 --1.0 IT11389 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Gate-to-Source Voltage, VGS -- V --1.8 --2.0 IT11390 No. A0489-2/4 2SJ630 RDS(on) -- VGS 160 RDS(on) -- Ta 160 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 120 --1.5A 100 --3.0A ID= --0.3A 80 60 40 20 0 0 --2 A, V GS= I D= --1.5 .5V = --4.5V ID= --3.0A, VGS 40 20 --40 --20 0 20 40 60 80 100 120 140 160 IT11392 IS -- VSD VGS=0V 2 = Ta --2 75 °C 1.0 7 5 3 --1.0 7 5 3 2 --0.1 7 5 3 2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 --0.01 --0.2 5 7 --10 IT11393 --0.6 --0.8 --1.0 --1.2 IT11394 Ciss, Coss, Crss -- VDS 3 VDD= --6V VGS= --4.5V 1000 --0.4 Diode Forward Voltage, VSD -- V SW Time -- ID 2 --25°C 5°C C 25 3 25° °C 5 2 5°C Source Current, IS -- A Forward Transfer Admittance, yfs -- S 60 3 7 Drain Current, ID -- A f=1MHz 2 7 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 80 --10 7 5 10 0.1 --0.01 3 2 tr td(off) 100 7 tf 5 3 Ciss 1000 7 5 3 Coss Crss 2 2 td(on) 10 7 --0.1 100 2 3 5 7 --1.0 2 3 5 Drain Current, ID -- A 7 0 --10 IT11395 3 2 Drain Current, ID -- A --3.5 --3.0 --2.5 --2.0 --1.5 --10 7 5 3 2 4 6 8 Total Gate Charge, Qg -- nC 10 12 IT11397 --10 --12 IT11396 ASO 10 1m µs 100 µs s ID= --6A 3 2 --0.5 0 --8 IDP= --24A 10 1 DC 00m ms s op era tio n --1.0 7 5 --0.1 7 5 2 --6 3 2 --1.0 0 --4 5 VDS= --6V ID= --6A --4.0 --2 Drain-to-Source Voltage, VDS -- V VGS -- Qg --4.5 Gate-to-Source Voltage, VGS -- V --1.8V , V GS= .3A I D= --0 Ambient Temperature, Ta -- °C VDS= --6V 2 100 IT11391 yfs -- ID 3 120 0 --60 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0 --5.5 --6.0 Gate-to-Source Voltage, VGS -- V 140 Ta= 7 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 140 Operation in this area is limited by RDS(on). Tc=25°C Single pulse --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 IT11398 No. A0489-3/4 2SJ630 PD -- Ta 1.5 M ou nte do na 1.0 ce ram ic bo ard PD -- Tc 4.0 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 2.0 (6 00 mm 0.5 2 ✕0 .8m m) 3.5 3.0 2.0 1.0 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11399 0 20 40 60 80 100 120 140 Case Temperature, Ta -- °C 160 IT11400 Note on usage : Since the 2SJ630 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of August, 2006. Specifications and information herein are subject to change without notice. PS No. A0489-4/4