2SK2624ALS Ordering number : ENA0362A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK2624ALS General-Purpose Switching Device Applications Features • • • Low ON-resistance. Low Qg. Ultrahigh-speed switching. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 600 Gate-to-Source Voltage VGSS ±30 V ID 3.5 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V 12 A 2.0 W Allowable Power Dissipation PD 25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS 49 mJ Avalanche Current *2 IAV 3 A Tc=25°C *1 VDD=50V, L=10mH, IAV=3A *2 L≤10mH, single pulse Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Marking : K2624 Symbol V(BR)DSS IDSS IGSS VGS(off) Conditions ID=1mA, VGS=0V VDS=600V, VGS=0V VGS=±30V, VDS=0V VDS=10V, ID=1mA Ratings min typ max 600 Unit V 1.0 ±100 3.5 5.5 mA nA V Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22107 TI IM TC-00000529 / 72006QB MS IM TC-00000028 No. A0362-1/5 2SK2624ALS Continued from preceding page. Parameter Symbol Forward Transfer Admittance Ratings Conditions min ID=1.8A, VGS=15V VDS=20V, f=1MHz 550 pF Output Capacitance Coss VDS=20V, f=1MHz 165 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 85 pF VDS=200V, ID=3A, VGS=10V 15 nC ns Input Capacitance Total Gate Charge Qg 1.0 Unit max yfs RDS(on) Ciss Static Drain-to-Source On-State Resistance VDS=10V, ID=1.8A typ 2.0 S 2.0 2.6 Ω Turn-ON Delay Time td(on) See specified Test Circuit. 17 Rise Time tr td(off) See specified Test Circuit. 17 ns See specified Test Circuit. 40 ns tf VSD See specified Test Circuit. Turn-OFF Delay Time Fall Time Diode Forward Voltage 22 IS=3A, VGS=0V Package Dimensions ns 0.98 1.2 V Switching Time Test Circuit unit : mm (typ) 7509-002 VDD=200V 4.5 10.0 ID=1.8A RL=111Ω 2.8 VOUT VGS=15V 7.2 3.5 3.2 D 16.0 PW=1µs D.C.≤0.5% 0.6 16.1 G 0.75 2.4 1 2 3 2.55 P.G 1.2 14.0 3.6 0.9 1.2 2.55 RGS 50Ω S 2SK2624ALS 0.7 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Avalanche Resistance Test Circuit L ≥50Ω RG 2SK2624ALS 15V 0V 50Ω VDD No. A0362-2/5 2SK2624ALS ID -- VDS 4.0 ID -- VGS 5.0 VDS=10V Tc= --25°C 4.5 3.5 15V 2.5 Drain Current, ID -- A Drain Current, ID -- A 4.0 3.0 V 10 8V 2.0 7V 1.5 1.0 3.5 25°C 3.0 2.5 75°C 2.0 1.5 1.0 VGS=6V 0.5 0.5 0 0 0 1 2 3 4 5 6 7 8 9 Drain-to-Source Voltage, VDS -- V 10 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 3.5 3.0 ID=3.0A 1.8A 2.0 1.0A 1.5 10 12 14 16 18 20 IT01021 RDS(on) -- Tc 6.0 5.5 5.0 4.5 4.0 =1 GS 3.5 0V ,V 5V =1 .8A S =1 , VG ID .8A =1 ID 3.0 2.5 2.0 1.5 1.0 0.5 0 2 4 6 8 10 12 14 16 18 Gate-to-Source Voltage, VGS -- V 0 --50 20 3 2 Tc= --25°C 25°C 1.0 7 75°C 5 3 2 0.1 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A 10 IT01024 Tc= 7 0.01 7 5 3 2 0.001 100 125 150 IT01023 5 4 3 2 1 --25 0 25 50 75 100 125 150 IT01025 SW Time -- ID 100 VDD=200V VGS=15V 7 Switching Time, SW Time -- ns 5°C 25° C --25 °C 0.1 7 5 3 2 75 Case Temperature, Tc -- °C VGS=0V 10 7 5 3 2 1.0 7 5 3 2 50 VDS=10V ID=1mA 0 --50 7 IS -- VSD 100 7 5 3 2 25 VGS(off) -- Tc 6 Cutoff Voltage, VGS(off) -- V 5 0 Case Temperature, Tc -- °C VDS=10V 7 --25 IT01022 yfs -- ID 10 Forward Transfer Admittance, yfs -- S 8 6.5 1.0 Source Current, IS -- A 6 7.0 Tc=25°C 2.5 4 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS 4.0 2 IT01020 td(off) 5 3 tf td(on) 2 tr 10 7 5 3 2 1.0 0 0.3 0.6 0.9 1.2 Diode Forward Voltage, VSD -- V 1.5 IT01026 5 7 1.0 2 Drain Current, ID -- A 3 5 IT01027 No. A0362-3/5 2SK2624ALS Ciss, Coss, Crss -- VDS 1000 Ciss 7 2 Coss 100 Crss Drain Current, ID -- A Ciss, Coss, Crss -- pF 5 3 7 5 3 2 10 5 0 10 15 20 25 Drain-to-Source Voltage, VDS -- V 1.0 7 5 3 2 1.5 1.0 0.5 10 10 ms 0m s s 10 0µ s op era tio n Tc=25°C Single Pulse 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT10851 PD -- Tc 30 2.0 DC Operation in this area is limited by RDS(on). 0.1 7 5 3 2 10 µs 1m Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W ID=3.5A IT01028 25 20 15 10 5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT01031 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT01030 EAS -- Ta 120 Avalanche Energy derating factor -- % PW≤10µs IDP=12A 10 7 5 3 2 0.01 1.0 30 PD -- Ta 2.5 ASO 100 7 5 3 2 f=1MHz 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0362-4/5 2SK2624ALS Note on usage : Since the 2SK2624ALS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of February, 2007. Specifications and information herein are subject to change without notice. PS No. A0362-5/5