2SK3707 Ordering number : ENN7706 2SK3707 N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • • Low ON-resistance. 4V drive. Motor driver, DC / DC converter. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V ID 20 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 80 A 2.0 W Allowable Power Dissipation PD 25 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Enargy (Single Pulse) *1 EAS 125 mJ Avalanche Current *2 IAV 20 A Tc=25°C Note : *1 VDD=20V, L=500µH, IAV=20A *2 L≤500µH, single pulse Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Ratings min typ ID=1mA, VGS=0 VDS=100V, VGS=0 VGS= ±16V, VDS=0 100 IDSS IGSS VGS(off) yfs VDS=10V, ID=1mA VDS=10V, ID=10A 1.2 RDS(on)1 RDS(on)2 ID=10A, VGS=10V ID=10A, VGS=4V Unit max V ±10 µA µA 2.6 V 45 60 mΩ 56 80 mΩ 1 11 17 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN D1003QA TS IM TA-100958 No.7706-1/4 2SK3707 Continued from preceding page. Parameter Symbol Conditions Ratings min typ Unit max Input Capacitance Ciss pF Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 2150 Output Capacitance 160 pF Reverse Transfer Capacitance Crss VDS=20V, f=1MHz 110 pF Turn-ON Delay Time td(on) See specified Test Circuit. 19.5 ns Rise Time tr td(off) See specified Test Circuit. 30 ns See specified Test Circuit. 185 ns tf See specified Test Circuit. 60 ns Turn-OFF Delay Time Fall Time Total Gate Charge Qg VDS=50V, VGS=10V, ID=20A 44 nC Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=20A 7.8 nC Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=10V, ID=20A Diode Forward Voltage VSD IS=20A, VGS=0 9.8 nC 0.95 1.2 V Marking : K3707 Package Dimensions unit : mm 2063A 4.5 2.8 3.5 7.2 10.0 5.6 18.1 16.0 3.2 2.4 14.0 1.6 1.2 0.7 0.75 2.4 2.55 1 : Gate 2 : Drain 3 : Source 1 2 3 2.55 2.55 SANYO : TO-220ML 2.55 Switching Time Test Circuit Unclamped Inductive Test Circuit VDD=50V VIN 10V 0V ≥50Ω RG ID=10A RL=5Ω VIN D L DUT VOUT PW=10µs D.C.≤1% 15V 0V G 50Ω VDD 2SK3707 P.G 50Ω S No.7706-2/4 2SK3707 4V 35 ID -- VGS VDS=10V 15 10 VGS=3V 1.5 2.0 2.5 3.0 Drain-to-Source Voltage, VDS -- V Tc= -0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 110 100 90 80 Tc= 75°C 60 50 25°C 40 --25°C 30 20 10 0 3 2 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 2 10 = Tc 7 5 C 5°C --2 °C 75 3 2 2 3 5 7 1.0 2 3 5 7 10 2 3 4.5 IT06746 90 80 =4V V GS 0V , 1 10A S= I D= , VG A 10 I D= 70 60 50 40 30 20 10 --25 0 25 50 75 100 125 150 IT06748 IF -- VSD VGS=0 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 5 7 100 IT06749 Drain Current, ID -- A 0 3 1.2 1.5 IT06750 f=1MHz Ciss Ciss, Coss, Crss -- pF 2 tf 5 3 tr 2 0.9 3 100 7 0.6 Ciss, Coss, Crss -- VDS 5 VDD=50V VGS=10V td(off) 2 0.3 Diode Forward Voltage, VSD -- V SW Time -- ID 5 1000 7 5 3 Coss 2 Crss td(on) 100 7 10 7 0.1 4.0 0.01 7 5 3 2 0.001 1.0 7 5 0.1 3.5 100 100 7 5 3 2 Forward Drain Current, IF -- A 25° 3.0 Case Temperature, Tc -- °C 5 3 2.5 110 0 --50 10 VDS=10V 7 2.0 RDS(on) -- Tc IT06747 yfs -- ID 100 1.5 120 ID=10A 70 1.0 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 120 0.5 IT06745 --25°C 1.0 °C 25°C 0.5 Tc= 75 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 10 0 0 Forward Transfer Admittance, yfs -- S 15 5 5 Switching Time, SW Time -- ns 20 =7 5°C --25 °C 20 25 Tc 25 30 25 °C 30 Drain Current, ID -- A 10 Drain Current, ID -- A V 35 75° C 6V 8V Tc=25°C 40 2 25°C 5°C ID -- VDS 40 5 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 IT06751 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT06752 No.7706-3/4 2SK3707 VGS -- Qg 10 VDS=50V ID=20A 8 100 7 5 7 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 6 5 4 1 3 2 5 10 15 20 25 30 35 40 Total Gate Charge, Qg -- nC 50 Tc=25°C Single pulse 2 3 5 7 1.0 0.5 2 3 5 7 10 2 3 5 7 100 2 IT06754 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.0 s 10 ms 0 op ms er ati on 10 Operation in this area is limited by RDS(on). PD -- Tc 30 1.5 0µ s 1m DC IT06753 2.0 10 µs 10 ID=20A 0.1 0.1 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 45 <10µs 3 2 2 0 IDP=80A 10 7 5 1.0 7 5 3 0 ASO 2 25 20 15 10 5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT06755 0 20 40 60 80 100 120 140 Case Temperature, Tc -- °C 160 IT06756 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of December, 2003. Specifications and information herein are subject to change without notice. PS No.7706-4/4