2SK4118LS Ordering number : ENA0829 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 2SK4118LS General-Purpose Switching Device Applications Features • • • • Low ON-resistance, low input capacitance, ultrahigh-speed switching. Adoption of high reliability HVP process. Attachment workability is good by Mica-less package. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS ±30 V IDc*1 IDpack*2 Drain Current (DC) Drain Current (Pulse) IDP Limited only by maximum temperature SANYO’s ideal heat dissipation condition PW≤10µs, duty cycle≤1% 18 A 11.9 A 60 A 2.0 W Allowable Power Dissipation PD 37 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *3 EAS 427 mJ Avalanche Current *4 IAV 18 A Tc=25°C (SANYO’s ideal heat dissipation condition) *1 Shows chip capability *2 Package limited *3 VDD=99V, L=2mH, IAV=18A *4 L≤2mH, single pulse Marking : K4118 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 61307QB TI IM TC-00000711 No. A0829-1/5 2SK4118LS Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Ratings Conditions min typ Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=320V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±30V, VDS=0V VDS=10V, ID=1mA 3 yfs RDS(on) VDS=10V, ID=9A 4 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Unit max 400 V 100 µA ±100 nA 5 V 0.34 Ω 8 S Input Capacitance Ciss ID=9A, VGS=10V VDS=30V, f=1MHz Output Capacitance Coss VDS=30V, f=1MHz Reverse Transfer Capacitance Crss td(on) VDS=30V, f=1MHz See specified Test Circuit. 52 Turn-ON Delay Time 25 ns Rise Time tr td(off) See specified Test Circuit. 100 ns See specified Test Circuit. 108 ns tf See specified Test Circuit. 49 ns Turn-OFF Delay Time Fall Time 0.26 1000 pF 240 pF pF Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=200V, VGS=10V, ID=18A VDS=200V, VGS=10V, ID=18A 38.8 nC 6.7 nC Gate-to-Drain “Miller” Charge Qgd VDS=200V, VGS=10V, ID=18A 25 Diode Forward Voltage VSD IS=18A, VGS=0V 0.9 nC 1.2 V Package Dimensions unit : mm (typ) 7509-002 4.5 10.0 2.8 0.6 16.1 16.0 7.2 3.5 3.2 1.2 14.0 3.6 0.9 1.2 0.75 0.7 1 : Gate 2 : Drain 3 : Source 2.4 1 2 3 2.55 SANYO : TO-220FI(LS) 2.55 Switching Time Test Circuit VIN Avalanche Resistance Test Circuit VDD=200V L 10V 0V ≥50Ω RG ID=9A RL=22.2Ω VIN D VOUT PW=10µs D.C.≤0.5% 2SK4118LS 10V 0V G 50Ω VDD 2SK4118LS P.G RGS=50Ω S No. A0829-2/5 2SK4118LS ID -- VDS Tc=25°C 45 15V 50 10V 45 35 30 25 8V 20 15 10 6V 10 15 20 25 25 20 15 30 0 1.0 0.8 0.6 Tc= --25°C 25°C 75°C 0 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 Gate-to-Source Voltage, VGS -- V 5°C --2 = Tc C 75° 3 A 2 1.0 0.2 0.1 7 1.0 2 3 5 7 2 10 Drain Current, ID -- A 3 Ciss, Coss, Crss -- pF td(off) 100 7 tr tf 5 td(on) 3 2 3 150 IT12515 3 2 0.4 0.6 0.8 1.0 1.2 1.4 IT12517 Ciss, Coss, Crss -- VDS f=1MHz 3 2 Ciss 1000 7 5 Coss 3 2 100 7 5 Crss 3 2 VDD=200V VGS=10V 0.1 125 Diode Forward Voltage, VSD -- V 5 2 100 1.0 7 5 10000 7 5 3 75 VGS=0V IT12516 7 50 IS -- VSD 0.01 0.2 5 SW Time -- ID 1000 25 3 2 3 2 5 0 10 7 5 3 3 --25 3 2 5 2 1 S= VG 0.3 0.1 7 5 7 2 0.1 =9 , ID 0V 0.4 Case Temperature, Tc -- °C Source Current, IS -- A 7 5 0.5 5 C 25° 10 15 IT12513 0.6 IT12514 VDS=10V 2 12 0.7 0 --50 10 yfs -- ID 3 9 RDS(on) -- Tc 0.8 1.2 0.2 6 Gate-to-Source Voltage, VGS -- V ID=9A 0.4 3 IT12512 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 75°C 30 5 RDS(on) -- VGS 1.4 Forward Transfer Admittance, yfs -- S 35 25°C --25°C 5 Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 25°C 40 0 0 10 Tc= --25°C 10 VGS=5V 0 2 VDS=20V Tc=7 5°C Drain Current, ID -- A 40 5 ID -- VGS 55 Drain Current, ID -- A 50 10 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 IT12518 0 10 20 30 40 Drain-to-Source Voltage, VDS -- V 50 IT12519 No. A0829-3/5 2SK4118LS VGS -- Qg 10 VDS=200V ID=10A 8 7 6 5 4 3 1 0 10 20 30 40 Total Gate Charge, Qg -- nC IDpack(*2)=11.9A 1.0 7 5 3 2 2.0 1.5 1.0 0.5 1m s m 1 s DC 00 ms op era tio n 10 µs 0µ s 10 Operation in this area is limited by RDS(on). *1. Shows chip capability *2. SANYO’s ideal heat dissipation condition 2 3 5 7 10 2 3 5 7 100 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 10 7 5 3 2 2 3 5 7 IT12430 PD -- Tc 40 37 35 30 25 20 15 10 5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT12368 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT12431 EAS -- Ta 120 Avalanche Energy derating factor -- % 10 IDc(*1)=18A IT12520 PD -- Ta 2.5 PW≤10µs 0.1 7 5 3 Tc=25°C 2 Single pulse 0.01 0.1 2 3 5 7 1.0 2 0 IDP=60A 100 7 5 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 ASO 2 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A0829-4/5 2SK4118LS Note on usage : Since the 2SK4118LS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No. A0829-5/5