CPH5517 Ordering number : ENN8205 CPH5517 PNP / NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications • relay drivers, lamp drivers, motor drivers. Features • • • Composite type with a PNP/NPN transistor contained in package, facilitating high-density mounting. The CPH5517 consists of two chips which are equivalent to the CPH3116 and the CPH3216, respectively. Ultrasmall package permitting applied sets to be small and slime (mounting height : 0.9mm). Specifications ( ) : PNP Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)60 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)5 V IC (--)1.0 A Base Current ICP IB (--)200 Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Collector Current Collector Current (Pulse) (--)3 Mounted on a ceramic board (600mm2✕0.8mm) 1unit A mA 0.9 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Symbol ICBO IEBO Conditions Ratings min typ max VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 Gain-Bandwideth Product hFE fT VCE=(--)2V, IC=(--)100mA VCE=(--)10V, IC=(--)300mA Output Capacitance Cob VCB=(--)10V, f=1MHz 200 Marking : EM Unit (--)0.1 µA (--)0.1 µA 560 420 MHz (9)6 pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 21505 TS IM TB-00001151 No.8205-1/5 CPH5517 Continued from preceding page. Parameter Symbol Ratings Conditions min typ IC=(--)500mA, IB=(--)10mA Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)300mA, IB=(--)6mA Base-to-Emitter Saturation Voltage VBE(sat) Collector-to-Base Breakdown Voltage V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time ton tstg tf Storage Time Fall Time IC=(--)500mA, IB=(--)10mA IC=(--)10µA, IE=0 IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0 mV (--145) (--220) mV 90 135 mV (--)0.81 (--)1.2 V (--50)60 V (--)50 V (--)5 V See specified test circuit. (173)332 ns See specified test circuit. (28)40 ns ns IB1 PW=20µs DC≤1% 0.15 IB2 OUTPUT 0.2 0.6 INPUT RB VR 0.05 2.8 1.6 mV 190 (36)38 3 + 50Ω 100µF 0.6 1 (--430) 130 Switching Time Test Circuit 0.4 4 (--280) See specified test circuit. Package Dimensions unit : mm 2242 5 Unit max 24Ω + 470µF 2 1 : Collector1 2 : Collector2 3 : Emitter2 4 : Base Common 5 : Emitter1 0.95 0.7 0.9 0.2 2.9 VBE= --5V VCC=25V 20IB1= --20IB2= IC=500mA For PNP, the polarity is reversed. SANYO : CPH5 Electrical Connection 5 4 3 1 1 : Collector1 2 : Collector2 3 : Emitter2 4 : Base Common 5 : Emitter1 2 Top view IC -- VCE [PNP] --30 40mA --2 0mA --1 --8mA --6mA --600 --4mA --400 --2mA --200 IB=0 0 0 --0.2 --0.4 --0.6 --0.8 Collector-to-Emitter Voltage, VCE -- V --1.0 IT01643 Collector Current, IC -- mA --800 IC -- VCE 1000 0mA 800 [NPN] 10mA 30mA 8mA 20mA mA 50mA 0 --4 mA --5 0 Collector Current, IC -- mA mA --1000 6mA 4mA 600 2mA 400 200 IB=0 0 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, VCE -- V IT01644 No.8205-2/5 CPH5517 [PNP] --0.8 0.8 --0.6 --0.5 --0.4 --0.3 --0.2 --0.1 0.5 0.4 0.3 0.1 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V 0 --1.2 5 [PNP] DC Current Gain, hFE 25°C 100 7 5 3 5 7 --1.0 2 5 IT01647 f T -- IC [PNP] 5 10 0.01 3 Collector Current, IC -- A 3 5 7 2 0.1 3 5 7 1.0 f T -- IC 5 Gain-Bandwidth Product, f T -- MHz 1000 7 5 3 2 100 7 5 2 3 IT01648 [NPN] VCE=10V 3 2 3 2 --0.01 2 Collector Current, IC -- A VCE= --10V 3 25°C 7 2 2 --25°C 100 2 7 --0.1 [NPN] Ta=75°C 2 3 5 1.2 IT01646 3 3 3 1.0 VCE=2V 5 --25°C 2 0.8 7 3 10 --0.01 0.6 hFE -- IC 1000 Ta=75°C 2 0.4 Base-to-Emitter Voltage, VBE -- V VCE= --2V 7 0.2 IT01645 hFE -- IC 1000 DC Current Gain, hFE 0.6 0 0 Gain-Bandwidth Product, f T -- MHz 0.7 0.2 0 2 1000 7 5 3 2 100 7 5 3 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 2 0.01 3 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A IT01649 Cob -- VCB 100 100 3 IT01650 Cob -- VCB [PNP] f=1MHz [NPN] f=1MHz 7 7 5 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF [NPN] VCE=2V C 25°C --25°C Collector Current, IC -- A 0.9 Ta=7 5°C 25°C --25°C Collector Current, IC -- A --0.9 --0.7 IC -- VBE 1.0 VCE= --2V Ta=7 5° IC -- VBE --1.0 3 2 10 7 5 3 5 3 2 10 7 5 3 2 2 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 --100 IT01651 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 5 7 100 IT01652 No.8205-3/5 CPH5517 VCE(sat) -- IC --1.0 [PNP] 3 2 --0.1 C 75° Ta= 7 5 3 C 25° --25° C 2 --0.01 --0.01 2 3 5 7 2 --0.1 3 5 Collector Current, IC -- A VCE(sat) -- IC --1.0 3 2 5°C --0.1 7 Ta= 7 25° C 5 --25° C 3 2 3 5 7 3 2 --0.1 5 3 2 Ta= --25°C 7 75°C 25°C 3 2 3 5 7 2 --0.1 3 5 Collector Current, IC -- A ASO 5 s 10 m DC 10 0.1 7 5 s s op ati on Ta=25°C Single pulse Mounted on a ceramic board (600mm2✕0.8mm) For PNP, minus sign is omitted 0.01 0.1 2 3 2 3 °C 25 C 5 7 2 0.1 3 5 5 7 1.0 2 3 5 7 10 2 Collector-to-Emitter Voltage, VCE -- V 7 1.0 IT01654 VCE(sat) -- IC [NPN] IC / IB=50 5 3 2 0.1 5°C 7 7 Ta= 5 25° C C --25° 3 2 2 3 5 7 2 0.1 3 5 VBE(sat) -- IC 7 1.0 IT01656 [NPN] IC / IB=50 5 3 2 1.0 Ta= --25°C 7 5 75°C 25°C 3 2 2 3 5 7 2 0.1 3 5 7 1.0 IT01658 Collector Current, IC -- A PC -- Ta 1.4 [PNP / NPN] 1.2 0m er 2 2 --1.0 IT01657 s s 0µ 0µ 10 50 1m IC=1A 3 3 --25° 0.1 0.01 7 [PNP / NPN] 2 1.0 7 5 2 7 ICP=3A 3 5°C 7 Ta= 3 10 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 2 5 Collector Current, IC -- A [PNP] 7 --0.1 --0.01 7 0.01 0.01 --1.0 IT01655 IC / IB=50 5 0.1 1.0 7 VBE(sat) -- IC --10 --1.0 2 7 5 2 3 Collector Current, IC -- A [PNP] Collector Current, IC -- A Collector Current, IC -- A --1.0 IT01653 IC / IB=50 --0.01 --0.01 5 0.01 0.01 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 [NPN] IC / IB=20 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 VCE(sat) -- IC 1.0 IC / IB=20 1.0 M ou 0.9 nte do 0.8 na ce ram ic 0.6 bo ard (60 0m 0.4 m2 ✕0 .8 mm 0.2 )1 un 0 3 5 7 IT09272 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 it 160 IT01660 No.8205-4/5 CPH5517 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2005. Specifications and information herein are subject to change without notice. PS No.8205-5/5