Ordering number : ENN7386 CPH6123 / CPH6223 PNP / NPN Epitaxial Planar Silicon Transistors CPH6123 / CPH6223 High-Current Switching Applications Applications • Package Dimensions DC-DC converter, relay drivers, lamp drivers, motor drivers, strobe. unit : mm 2146A [CPH6123 / CPH6223] • • 0.6 1.6 2.8 0.05 0.6 • 4 1 2 3 0.95 0.2 • 6 Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. Ultrasmall package facilitates miniaturization in end products (mounting height : 0.9mm). High allowable power dissipation. 1 : Collector 2 : Collector 3 : Base 4 : Emitter 5 : Collector 6 : Collector 0.7 0.9 • 5 0.2 Features • 0.15 2.9 0.4 Specifications ( ) : CPH6123 SANYO : CPH6 Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO (--50)100 V Collector-to-Emitter Voltage VCES (--50)100 V Collector-to-Emitter Voltage VCEO (--)50 V Emitter-to-Base Voltage VEBO (--)6 V IC (--)3 A (--)6 Base Current ICP IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Collector Current Collector Current (Pulse) (--)600 Mounted on a ceramic board (600mm2✕0.8mm) A mA 1.3 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product hFE fT Output Capacitance Cob Conditions VCB=(--)40V, IE=0 VEB=(--)4V, IC=0 VCE=(--)2V, IC=(--)100mA VCE=(--)10V, IC=(--)500mA VCB=(--)10V, f=1MHz Ratings min typ max 200 Unit (--)1 µA (--)1 µA 560 (390)380 (24)13 Marking : CPH6123 : BA, CPH6223 : DA MHz pF Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 62503 TS IM TA-3814, 3816 No.7386-1/5 CPH6123 / CPH6223 Continued from preceding page. Parameter Symbol Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Breakdown Voltage V(BR)CES V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Storage Time min IC=(--)1A, IB=(--)50mA IC=(--)2A, IB=(--)100mA IC=(--)2A, IB=(--)100mA Collector-to-Base Breakdown Voltage Turn-ON Time Ratings Conditions typ (--115)90 (--230)130 mV (--240)160 (--650)240 mV (--)0.88 IC=(--)10µA, IE=0 IC=(--)100µA, RBE=0 Unit max (--)1.2 V (--50)100 V (--50)100 V (--)50 V IC=(--)1mA, RBE=∞ IE=(--)10µA, IC=0 (--)6 V ton tstg See specified Test Circuit. (30)35 ns See specified Test Circuit. (230)300 ns tf See specified Test Circuit. (18)25 ns Fall Time Switching Time Test Circuit IB1 PW=20µs D.C.≤1% OUTPUT IB2 INPUT RB VR RL 50Ω + 470µF + 100µF VBE= --5V VCC=25V IC=10IB1= --10IB2=1A For PNP, the polarity is reversed. IC -- VCE CPH6123 mA 0 --4 Collector Current, IC -- A --1.8 IC -- VCE 5.0 mA CPH6223 mA 0 --3 --20 --1.6 A --10m --8mA --6mA --1.4 --1.2 --1.0 --4mA --0.8 --0.6 --2mA --0.4 80mA 0mA 10 4.5 Collector Current, IC -- A --2.0 60mA 4.0 40mA 3.5 3.0 20mA 2.5 10mA 2.0 5mA 1.5 1.0 --0.2 0.5 IB=0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Collector-to-Emitter Voltage, VCE -- V --0.9 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 2.0 IT04565 IC -- VBE 3.0 CPH6223 VCE=2V CPH6123 VCE= --2V 2.5 --2.0 --1.5 Ta=7 5°C 25°C --25°C --1.0 --0.5 2.0 1.5 1.0 Ta=7 5°C 25°C --25°C Collector Current, IC -- A --2.5 Collector Current, IC -- A 1.8 Collector-to-Emitter Voltage, VCE -- V IT04564 IC -- VBE --3.0 IB=0 0 --1.0 0.5 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT04566 0 0.2 0.4 0.6 0.8 Base-to-Emitter Voltage, VBE -- V 1.0 1.2 IT04567 No.7386-2/5 CPH6123 / CPH6223 hFE -- IC 1000 7 DC Current Gain, hFE DC Current Gain, hFE 25°C 3 CPH6223 VCE=2V 7 Ta=75°C 5 hFE -- IC 1000 CPH6123 VCE= --2V --25°C 2 5 Ta=75°C 25°C 3 --25°C 2 100 100 7 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 2 100 7 5 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 3 2 3 5 7 1.0 3 2 100 7 5 3 2 2 3 2 5 7 0.1 2 3 5 7 1.0 2 3 5 IT04571 Cob -- VCB 100 CPH6223 f=1MHz 7 Output Capacitance, Cob -- pF 3 5 CPH6223 VCE=10V Collector Current, IC -- A CPH6123 f=1MHz 3 f T -- IC IT04570 5 2 IT04569 5 10 0.01 5 7 Output Capacitance, Cob -- pF 7 0.1 Collector Current, IC -- A Cob -- VCB 100 5 7 3 3 3 1000 5 2 2 IT04568 CPH6123 VCE= --10V 7 3 --0.01 7 0.01 5 f T -- IC 1000 Gain-Bandwidth Product, f T -- MHz 3 Gain-Bandwidth Product, f T -- MHz 5 --0.01 5 3 2 10 7 2 3 5 Collector-to-Base Voltage, VCB -- V 2 --1000 7 5 3 2 5°C =7 Ta 5°C 25°C --2 2 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 5 7 --10 IT04574 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 3 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 IT04573 VCE(sat) -- IC 5 CPH6123 IC / IB=20 --100 7 5 2 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC 5 --10 --0.01 5 0.1 7 --100 IT04572 CPH6223 IC / IB=20 3 2 100 7 °C --10 5 75 7 C 5 Ta = 3 3 5° 2 --2 10 --1.0 °C 25 2 10 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 IT04575 No.7386-3/5 CPH6123 / CPH6223 --1000 7 5 3 2 C 75° Ta= 5°C --2 --100 7 5 3 25° 2 2 3 5 7 --0.1 2 C 3 5 7 --1.0 2 3 2 --1.0 Ta= --25°C 7 75°C 25°C 3 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 s ms 0m s op er ati 3 2 on CPH6123 Ta=25°C Single pulse Mounted on a ceramic board(600mm2✕0.8mm) 3 2 --0.01 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 5 7 --100 Collector-to-Emitter Voltage, VCE -- V PC -- Ta 1.4 5 7 0.1 2 3 5 7 1.0 2 3 5 IT04577 VBE(sat) -- IC CPH6223 IC / IB=50 1.0 Ta= --25°C 7 25°C 5 2 3 5 7 0.1 75°C 2 3 5 7 1.0 2 3 3 2 ASO ICP=6A <10µs IC=3A 50 1m s DC 1.0 7 5 10 0µ 10 s ms 0m s op er 3 2 0.1 7 5 5 7 10 IT04579 ati on CPH6223 Ta=25°C Single pulse Mounted on a ceramic board(600mm2✕0.8mm) 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V 5 7 100 IT05568 CPH6123 / CPH6223 1.3 M 1.2 Collector Dissipation, PC -- W IT05567 3 2 3 2 3 2 µs 10 DC 0µ 10 2 100 s --1.0 7 5 --0.1 7 5 50 1m s 0µ IC= --3A 3 2 3 10 7 5 <10µs 10 Collector Current, IC -- A ICP= --6A C 5° =7 Ta C 5°C 25° --2 5 Collector Current, IC -- A ASO --10 7 5 7 3 0.01 5 7 --10 IT04578 Collector Current, IC -- A 100 3 Collector Current, IC -- A Base-to-Emitter Saturation Voltage, VBE(sat) -- V CPH6123 IC / IB=50 2 Collector Current, IC -- A VBE(sat) -- IC 3 3 10 0.01 5 7 --10 IT04576 Collector Current, IC -- A 5 CPH6223 IC / IB=50 5 2 --10 --0.01 VCE(sat) -- IC 7 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 VCE(sat) -- IC CPH6123 IC / IB=50 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 5 ou nt 1.0 ed on ac er 0.8 am ic bo ar 0.6 d( 60 0m m2 ✕ 0.4 0. 8m m ) 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT05569 No.7386-4/5 CPH6123 / CPH6223 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2003. Specifications and information herein are subject to change without notice. PS No.7386-5/5