SANYO CPH6528

CPH6528
Ordering number : EN8708
SANYO Semiconductors
DATA SHEET
CPH6528
PNP / NPN Epitaxial Planar Silicon Transistor
Push-Pull Circuit Applications
Applications
•
MOSFET gate drivers, relay drivers, lamp drivers, motor drivers.
Features
•
•
Composite type with a PNP / NPN transistor contained in one package, facilitating high-density mounting.
Ultrasmall package permitting applied sets to be small and slim.
Specifications ( ) : PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--30)40
Collector-to-Emitter Voltage
VCEO
(--30)30
V
Emitter-to-Base Voltage
VEBO
(--)5
V
Collector Current
Collector Current (Pulse)
IC
ICP
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
(--)700
V
mA
(--)1.4
A
0.6
W
150
°C
--55 to +150
°C
Mounted on a ceramic board (600mm2✕0.8m) 1unit
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
VCB=(--)30V, IE=0A
VEB=(--)4V, IC=0A
DC Current Gain
Gain-Bandwidth Product
hFE
fT
VCE=(--)2V, IC=(--10)50mA
VCE=(--)2V, IC=(--)50mA
Output Capacitance
Cob
VCE(sat)
VCB=(--)10V, f=1MHz
IC=(--)200mA, IB=(--)10mA
Collector-to-Base Breakdown Voltage
VBE(sat)
V(BR)CBO
IC=(--)200mA, IB=(--)10mA
IC=(--)10µA, IE=0A
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
IC=(--)1mA, RBE=∞
IE=(--)10µA, IC=0A
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Ratings
min
typ
(200)300
max
Unit
(--)100
nA
(--)100
nA
(500)800
(520)540
MHz
(4.7)3.3
pF
(--110)85 (--220)190
(--)0.9
(--)1.2
mV
V
(--30)40
V
(--)30
V
(--)5
V
Marking : EL
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
80906 / 22006EA MS IM TB-00002078 No.8708-1/5
CPH6528
Package Dimensions
unit : mm
7018-006
Electrical Connection
0.4
5
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
1
2
3
Top view
0.2
0.05
2.8
1.6
2
4
4
0.6
1
5
0.15
0.6
6
6
3
1 : Emitter1
2 : Base1
3 : Collector2
4 : Emitter2
5 : Base2
6 : Collector1
0.95
0.7
0.9
0.2
2.9
SANYO : CPH6
--400
A
--1mA
--200
--500µA
10
5mA
3mA
30m
500
[NPN]
7mA
mA
15m
A 20mA
600
--3mA
--2mA
--300
IC -- VCE
700
2mA
400
1mA
A
--500
[PNP]
A
--20m
A
--15m
A
--10m
A
m
7
---5mA
Collector Current, IC -- mA
-mA 40mA
--
--50
Collector Current, IC -- mA
--600
A
mA
30m --25
300
50m
IC -- VCE
--700
400µA
200
200µA
100
--100
0
0
IB=0A
0
0
--100 --200 --300 --400 --500 --600 --700 --800 --900 --1000
Collector-to-Emitter Voltage, VCE -- mV
IC -- VBE
--800
IB=0A
100
200
300
400
500
600
700
Collector-to-Emitter Voltage, VCE -- mV
IT05049
[PNP]
IC -- VBE
800
1000
IT05082
[NPN]
VCE=2V
VCE= --2V
700
Ta=7
5 °C
25°C
--25°C
--400
--300
--200
500
400
300
--25°C
--500
600
C
25°C
--600
Ta=7
5°
Collector Current, IC -- mA
--700
Collector Current, IC -- mA
900
800
200
100
--100
0
0
0
--0.2
--0.4
--0.6
--0.8
--1.0
Base-to-Emitter Voltage, VBE -- V
--1.2
IT05050
0
0.2
0.4
0.6
0.8
Base-to-Emitter Voltage, VBE -- V
1.0
IT05083
No.8708-2/5
CPH6528
hFE -- IC
1000
7
hFE -- IC
1000
7
DC Current Gain, hFE
--25°C
3
2
100
[NPN]
VCE=2V
Ta=75°C
Ta=75°C
25°C
5
DC Current Gain, hFE
[PNP]
VCE= --2V
25°C
5
--25°C
3
2
7
5
3
--1.0
2
3
5 7 --10
3
2
5 7 --100
2
3
Collector Current, IC -- mA
VCE(sat) -- IC
--1000
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
5
3
2
--100
7
5 °C
7
Ta=
5°C
--2
5 °C
3
2
2
--10
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
VCE(sat) -- IC
3
5
3
2
5°C
--100
7
7
Ta=
5
C
25°
3
2
--10
--1.0
5 °C
--2
2
3
5 7 --10
2
3
5 7 --100
2
3
Collector Current, IC -- mA
VBE(sat) -- IC
--10
Ta= --25°C
--1.0
7
75°C
5
25°C
3
2
--0.1
--1.0
2
3
5 7 --10
2
3
5 7 --100
Collector Current, IC -- mA
2
3
5 7--1000
IT05056
5 7 1000
IT05084
[NPN]
IC / IB=20
100
7
5
°C
75
5°C
3
2
2
Ta=
5
--2
°C
10
7
5
3
2
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05085
VCE(sat) -- IC
[NPN]
IC / IB=50
5
3
2
°C
75
100
7
°C
25
5° C
--2
5
=
Ta
3
2
2
3
5 7 10
2
3
5 7 100
2
3
5 7 1000
IT05086
VBE(sat) -- IC
10
[NPN]
IC / IB=20
7
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
2
3
Collector Current, IC -- mA
[PNP]
3
2
3
2
10
1.0
5 7--1000
IT05055
5
5 7 100
7
IC / IB=20
7
3
VCE(sat) -- IC
1000
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
7
2
5 7 10
Collector Current, IC -- mA
[PNP]
--1000
3
1000
7
5
1.0
1.0
5 7--1000
IT05054
IC / IB=50
2
2
Collector Current, IC -- mA
[PNP]
IC / IB=20
7
5
100
1.0
5 7--1000
IT05051
5
3
2
Ta= --25°C
1.0
7
75°C
25°C
5
3
2
0.1
1.0
2
3
5 7 10
2
3
5 7 100
Collector Current, IC -- mA
2
3
5 7 1000
IT05087
No.8708-3/5
CPH6528
Cob -- VCB
10
10
Output Capacitance, Cob -- pF
Output Capacitance, Cob -- pF
7
5
3
2
0.1
--1.0
2
5
3
7
2
--10
5
3
2
2
3
5
7
2
10
[PNP]
Gain-Bandwidth Product, fT -- MHz
3
2
100
--1.0
2
3
5 7 --10
2
3
5 7 --100
2
3
[NPN]
VCE=10V
Collector Current, IC -- mA
ASO
3
2
DC
10
0m
op
s
er
ati
on
0.1
ms
10
2
7
5
2
2
2
3
5 7 10
2
3
5 7 100
2
PC -- Ta
0.7
0.6
s
0µ
Collector Current, IC -- A
s
s
0µ
1m
IC=0.7A
3
3
3
3
5 7 1000
IT05089
[PNP/NPN]
ICP=1.4A
50
7
5
5
Collector Current, IC -- mA
[PNP/NPN]
10
1.0
7
100
1.0
5 7--1000
IT05052
Collector Dissipation, PC -- W
Gain-Bandwidth Product, fT -- MHz
5
5
IT05088
fT -- IC
1000
VCE= --10V
7
3
Collector-to-Base Voltage, VCB -- V
IT05053
fT -- IC
[NPN]
f=1MHz
7
1.0
1.0
5
3
Collector-to-Base Voltage, VCB -- V
1000
Cob -- VCB
[PNP]
f=1MHz
Ta=25°C
Single pulse
For PNP, minus sign is omitted.
Mounted on a ceramic board (600mm2✕0.8mm) 1unit
0.01
0.1
2
3
5
7 1.0
2
3
5
7 10
2
Collector-to-Emitter Voltage, VCE -- V
M
ou
nt
0.5
ed
on
ac
er
0.4
am
ic
bo
ar
0.3
d
(6
00
m
0.2
m2
✕
0.
8m
m
)1
0.1
un
it
0
3
5
IT10759
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10000
No.8708-4/5
CPH6528
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the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
evaluated in an independent device, the customer should always evaluate and test devices mounted
in the customer's products or equipment.
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for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
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This catalog provides information as of February, 2006. Specifications and information herein are subject
to change without notice.
PS No.8708-5/5