SANYO EC4K11MF

EC4K11MF
Ordering number : ENA0506
SANYO Semiconductors
DATA SHEET
CMOS IC
EC4K11MF
Amplifier IC for Condenser Microphone
Features
•
•
High gain, high SNR, high input resistance, low voltage operation, low power consumption.
Ultrasmall package permitting applied sets to be small and slim.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Maximum Power Supply Voltage
VDD max
Maximum Input Voltage
VIN max
Allowable Power Dissipation
Conditions
Ratings
Unit
RL=2.2kΩ, Connection
4
--0.5 to +0.5
V
V
PD
100
mW
Storage Temperature
Tstg
--55 to +150
°C
Operating Temperature
Topr
--20 to +70
°C
Electrical Characteristics at Ta=25°C
Parameter
Power Supply Voltage
Symbol
VDDopr
IDD
Consumption Current
Input Capacitance
Ci
Conditions
Ratings
min
typ
2
VDD=2.0V, VIN=0V, RL=2.2kΩ
VDD=2.0V, f=1MHz
140
Unit
max
170
3.6
V
200
µA
2.7
pF
[Ta=25˚C, VDD=2.V, RL=2.2kΩ, Ci=3pF, See specified Test Circuit.]
Voltage Gain
Total Harmonic Distortion
GV
∆GVf
THD
f=1kHz, VIN=10mV
Output Noise Voltage
VNO
VIN=0V, A curve
Frequency Characteristics
f=1kHz, VIN=10mV
f=1kHz to 100Hz
9.5
12
14
dB
0
--1
dB
--84
dB
0.25
--90
%
Marking : KD
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O0406IG MS IM TC-00000223 No. A0506-1/3
EC4K11MF
Package Dimensions
Test Circuit
unit : mm (typ)
7046-001
VDD
Top View
1.0
4
2.2kΩ
OUT
3
100nF
1.4
3pF
IN
VIN
1
2
Polarity Discriminating Mark
0.4
GND
0.025
IT11449
0.6
0.25
1
0.35
0.9
2
4
1 : GND
2 : IN
3 : GND
4 : OUT
3
Bottom View
SANYO : ECSP1410-4-F
IDD -- VDD
220
Cin=3pF
RL=2.2kΩ
VIN=10mV
f=1kHz
18
210
16
200
Voltage Gain, GV -- dB
Consumption Current, IDD -- µA
RL=2.2kΩ
190
180
170
160
14
12
10
8
6
4
150
2
2.0
2.5
3.0
Supply Voltage, VDD -- V
20
18
16
3.5
0
1.5
4.0
2.0
2.5
GV -- f
20
VDD=2V
Cin=3pF
RL=2.2kΩ
VIN=10mV
14
12
10
8
6
4
2
0
1.0 2 3 5 7 10 2 3 5 7100 2 3 5 7 1k 2 3 5 710k 2 3 5 7100k
Frequency Characteristics, f -- Hz
IT11446
3.0
3.5
4.0
Supply Voltage, VDD -- V
IT11444
Total Harmonic Distortion, THD -- %
140
1.5
Voltage Gain, GV -- dB
GV -- VDD
20
18
16
IT11445
THD -- VIN
VDD=2V
Cin=3pF
RL=2.2kΩ
f=1kHz
14
12
10
8
6
4
2
0
1.0
2
3
5
7
10
2
3
Input Voltage, VIN -- mV
5
7 100
IT11447
No. A0506-2/3
EC4K11MF
PD -- Ta
Allowable Power Dissipation, PD -- mW
120
100
80
60
40
20
0
0
10
20
30
40
50
60
Ambient Temperature, Ta -- °C
70
80
IT11448
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the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
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evaluated in an independent device, the customer should always evaluate and test devices mounted
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This catalog provides information as of October, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0506-3/3