ECH8618 Ordering number : ENA0298 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET ECH8618 General-Purpose Switching Device Applications Features • • • Ultrahigh-speed switching. 4V drive. Composite type, facilitating high-density mounting. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 100 V Gate-to-Source Voltage VGSS ±20 V 2 A Drain Current (DC) Drain Current (Pulse) ID IDP PW≤10µs, duty cycle≤1% 12 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 1unit 1.3 W Total Dissipation PT Tch Mounted on a ceramic board (900mm2✕0.8mm) Channel Temperature Storage Temperature Tstg 1.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol Ratings min typ Unit max Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=100V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) yfs VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=1A RDS(on)1 RDS(on)2 ID=1A, VGS=10V ID=0.5A, VGS=4V 200 260 mΩ 230 325 mΩ Input Capacitance Ciss 650 pF Output Capacitance Coss VDS=20V, f=1MHz VDS=20V, f=1MHz 42 pF 29 pF Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS Conditions Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time Marking : FL td(off) tf 100 V 1.2 1.6 1 µA ±10 µA 2.6 2.7 V S VDS=20V, f=1MHz See specified Test Circuit. 11.5 ns See specified Test Circuit. 4.9 ns See specified Test Circuit. 67 ns See specified Test Circuit. 23 ns Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 80906 / 12506PE MS IM TB-00001933 No. A0298-1/4 ECH8618 Continued from preceding page. Parameter Symbol Total Gate Charge Qg Gate-to-Source Charge Qgs VDS=50V, VGS=10V, ID=2A VDS=50V, VGS=10V, ID=2A Gate-to-Drain “Miller” Charge Qgd VDS=50V, VGS=10V, ID=2A Diode Forward Voltage VSD IS=2A, VGS=0V Package Dimensions unit : mm 7011A-001 Ratings Conditions min nC 2.1 nC nC 1.2 V Electrical Connection 8 7 6 5 1 2 3 4 2.9 0.25 13.8 3 0.15 5 2.3 0 to 0.02 2.8 Unit max 0.80 Top View 8 typ 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 1 0.65 0.3 0.9 0.25 Top view 4 0.07 1 : Source1 2 : Gate1 3 : Source2 4 : Gate2 5 : Drain2 6 : Drain2 7 : Drain1 8 : Drain1 SANYO : ECH8 Bottom View Switching Time Test Circuit VDD=50V VIN 10V 0V ID=1A RL=50Ω VIN D VOUT PW=10µs D.C.≤1% G ECH8618 P.G 50Ω S No. A0298-2/4 ECH8618 V Drain Current, ID -- A 3.0V 1.0 2 1 Ta= 7 0.5 3 5°C 5.0 V 8.0 0V 10.0 V VDS=10V 4 1 5. Drain Current, ID -- A 1.5 ID -- VGS 4 .0V 0 0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 Drain-to-Source Voltage, VDS -- V 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1A 300 ID=0.5A 200 100 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A C 5° = Ta 1.0 --2 7 °C 75 °C 25 5 3 2 0.1 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 200 100 --40 --20 0 20 80 100 120 140 160 IT10623 VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- pF tf td(on) 10 7 5 60 IT10625 Ciss, Coss, Crss -- VDS f=1MHz 1000 td(off) 3 2 40 IS -- VSD Ciss 7 100 7 5 V 10 S= VG A, 0 1. I D= 2 3 2 tr 5 3 2 100 7 Coss Crss 5 3 3 2 1.0 0.01 .5 0 I D= IT10624 VDD=50V VGS=10V 4.0 IT10621 V 0.001 0.2 5 7 SW Time -- ID 1000 7 5 3.5 Ambient Temperature, Ta -- °C 5 2 3.0 4 S= VG A, 300 7 5 3 2 3 2.5 400 0 --60 18 VDS=10V 7 2.0 500 IT10622 yfs -- ID 10 1.5 RDS(on) -- Ta 600 500 0 1.0 Gate-to-Source Voltage, VGS -- V Ta=25°C 400 0.5 IT10620 RDS(on) -- VGS 600 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 1.0 25° C --25 °C 0.1 Ta= 75° C 0 Forward Transfer Admittance, yfs -- S 25° VGS=2.5V Switching Time, SW Time -- ns C --25 °C ID -- VDS 2.0 2 10 2 3 5 7 0.1 2 3 5 7 1.0 Drain Current, ID -- A 2 3 5 7 IT10626 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT10627 No. A0298-3/4 ECH8618 VGS -- Qg 10 8 7 6 5 4 3 3 2 2 3 4 5 6 7 8 9 10 11 Total Gate Charge, Qg -- nC 12 13 14 IT10628 PD -- Ta 1.6 Allowable Power Dissipation, PD -- W 3 2 1 1 0µ s 1m ID=2A s 10 1.0 7 5 2 0 10 3 2 0.1 7 5 0 ≤10µs IDP=12A 10 7 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=50V ID=2A DC 10 op Operation in this area is limited by RDS(on). era ms 0m tio s n( Ta = 25 °C ) Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 IT10629 Drain-to-Source Voltage, VDS -- V Mounted on a ceramic board (900mm2✕0.8mm) 1.5 1.4 1.3 1.2 To t al 1.0 0.8 D iss ip 1u ni t at io n 0.6 0.4 0.2 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10630 Note on usage : Since the ECH8618 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2006. Specifications and information herein are subject to change without notice. PS No. A0298-4/4