Ordering number : ENN7500 2SJ650 P-Channl Silicon MOSFET 2SJ650 DC / DC Converter Applications Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. unit : mm 2063A [2SJ650] 4.5 2.8 3.5 7.2 10.0 5.6 18.1 16.0 3.2 2.4 14.0 1.6 1.2 0.7 0.75 1 2 3 2.55 1 : Gate 2 : Drain 3 : Source 2.4 2.55 Specifications 2.55 Absolute Maximum Ratings at Ta=25°C Parameter Symbol 2.55 SANYO : TO-220ML Conditions Ratings Unit Drain-to-Source Voltage VDSS --60 Gate-to-Source Voltage VGSS ±20 V ID --12 A Drain Current (DC) Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% V --48 A 2.0 W Allowable Power Dissipation PD 20 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Tc=25°C Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance V(BR)DSS IDSS IGSS VGS(off) yfs Conditions Ratings min typ ID=--1mA, VGS=0 VDS=--60V, VGS=0 VGS=±16V, VDS=0 --60 VDS=--10V, ID=--1mA VDS=--10V, ID=--6A --1.2 7 Marking : J650 Unit max V --1 µA ±10 µA --2.6 V 10 S Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 51903 TS IM TA-100560 No.7500-1/4 2SJ650 Continued from preceding page. Ratings Parameter Symbol Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--6A, VGS=--10V ID=--6A, VGS=--4V 100 135 mΩ 145 205 mΩ Input Capacitance Ciss VDS=--20V, f=1MHz 1020 Output Capacitance Coss VDS=--20V, f=1MHz 110 pF Reverse Transfer Capacitance Crss VDS=--20V, f=1MHz 76 pF Turn-ON Delay Time td(on) See specified Test Circuit. 10 ns Rise Time tr td(off) See specified Test Circuit. 145 ns See specified Test Circuit. 85 ns Turn-OFF Delay Time Fall Time Conditions tf Qg Total Gate Charge min typ Unit max pF See specified Test Circuit. 96 ns VDS=--30V, VGS=--10V, ID=--12A 21 nC 3.8 nC Gate-to-Source Charge Qgs Gate-to-Drain“Miller”Charge Qgd VDS=--30V, VGS=--10V, ID=--12A VDS=--30V, VGS=--10V, ID=--12A Diode Forward Voltage VSD IS=--12A, VGS=0 4.5 nC --0.9 --1.2 V Switching Time Test Circuit VDD= --30V VIN 0V --10V ID= --6A RL=5Ω VIN D VOUT PW=10µs D.C.≤1% G 2SJ650 50Ω V --8 --20 Drain Current, ID -- A V --6 --15 --4V --10 --5 --10 --5 25 VGS= --3V --15 °C --20 Tc= --1 0V Tc=25°C ID -- VGS VDS= --10V 75 --25 --25 °C 25 °C ID -- VDS --25 Drain Current, ID -- A S °C 75 °C Tc =-25 °C P.G 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V --4.5 --5.0 IT06157 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Gate-to-Source Voltage, VGS -- V --4.5 --5.0 IT06158 No.7500-2/4 2SJ650 RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 250 200 75°C 150 25°C 100 Tc= --25°C 50 0 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 Gate-to-Source Voltage, VGS -- V Cutoff Voltage, VGS(off) -- V --1.5 --1.0 --0.5 0 25 50 75 125 100 Case Temperature, Tc -- °C 100 50 --25 0 25 50 75 100 VDS= --10V 7 5 3 2 C 25° °C --25 Tc= 75°C 10 7 5 3 2 1.0 7 5 2 3 5 7 --1.0 2 3 5 7 --10 VDD= --30V VGS= --10V 7 3 2 td(off) tf 100 7 5 tr 3 2 td(on) 10 0 --0.3 --0.6 --0.9 --1.2 7 5 --0.1 --1.5 Diode Forward Voltage, VSD -- V Gate-to-Source Voltage, VGS -- V Ciss 3 Coss 100 7 5 Crss 3 2 7 2 --1.0 3 5 7 --10 IT06163 VDS= --30V ID= --12A --9 2 5 VGS -- Qg --10 f=1MHz 2 3 Drain Current, ID -- A 3 1000 7 5 2 IT06162 Ciss, Coss, Crss -- VDS 5 3 SW Time -- ID 1000 Switching Time, SW Time -- ns 75° C 25°C --25°C --0.1 7 5 3 2 2 IT06161 5 --1.0 7 5 3 2 150 IT06160 Drain Current, ID -- A VGS=0 --10 7 5 3 2 125 yfs -- ID IT06169 Tc= Forward Current, IF -- A 0V = --1 , VGS A 6 I D= 150 3 --0.1 150 --0.01 Ciss, Coss, Crss -- pF 4V = -S VG Case Temperature, Tc -- °C IF -- VSD --100 7 5 3 2 , --6A I D= 100 --2.0 --25 200 IT06159 VDS= --10V ID= --1mA 0 --50 250 0 --50 --10 VGS(off) -- Tc --2.5 RDS(on) -- Tc 300 ID= --6A Forward Transfer Admittance, yfs -- S Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 300 --8 --7 --6 --5 --4 --3 --2 --1 10 0 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT06164 0 5 10 15 Total Gate Charge, Qg -- nC 20 25 IT06165 No.7500-3/4 2SJ650 ASO IDP= --48A <10µs ID= --12A 10 1m 0µs s 3 Drain Current, ID -- A 2 --10 7 5 10 µs 10 m s 0m s 10 DC 3 op era 2 --1.0 7 5 tio n Operation in this area is limited by RDS(on). 3 Tc=25°C Single pulse 2 --0.1 --0.1 2 3 2.0 1.5 1.0 0.5 0 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 7 --100 IT06166 0 20 40 60 80 100 120 140 Ambient Tamperature, Ta -- °C 160 IT06167 PD -- Tc 25 Allowable Power Dissipation, PD -- W PD -- Ta 2.5 Allowable Power Dissipation, PD -- W --100 7 5 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT06168 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of May, 2003. Specifications and information herein are subject to change without notice. PS No.7500-4/4