SANYO LV5103LP

Ordering number : ENA0585
Bi-CMOS LSI
LV5103LP
Cell Phone Power Supply IC
Overview
The LV5103LP is a cell phone power supply IC.
Functions
• Single step-down DC-DC converter channel
• Eight series regulator channels
• Built-in thermal shutdown circuit
Features
• Low power dissipation
• Built-in shorting protection circuit
Specifications
Maximum Ratings at Ta = 25°C
Parameter
Maximum supply voltage
Allowable power dissipation
Symbol
Conditions
Ratings
VCC max
Pd max
Unit
6
Mounted on a circuit board.*
1100
V
mW
Operating temperature
Topr
-30 to +75
°C
Storage temperature
Tstg
-40 to +125
°C
* Specified circuit board : 40×50×0.8mm3 : 4-layer (2S2P) glass epoxy printed circuit board
Operating Conditions at Ta = 25°C
Parameter
Supply voltage
Symbol
VCC
Conditions
Ratings
Unit
3.2 to 4.5
V
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
12407 MS PC 20061003-S00002 No.A0585-1/11
LV5103LP
Electrical Characteristics
Ta = 25°C, VBAT = 3.7V, VBATL = 2.4V, unless otherwise specified.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
[Analog block] Current drain
Current drain 1
ICC1
With LD01 and VBATDET operating
Current drain 2
ICC2
With LD01, LD02. LD05, LD06, LD07, and
8
16
µA
50
75
µA
6
10
mA
2.4
2.55
LD08 operating. PS mode
Current drain 3
ICC3
With all LD0n channels operating, DC-DC
operation
[Switching Regulator Block] DC/DC1
Output voltage 1
Output current
Efficiency 1
Efficiency 2
Oscillator frequency
VOSW1
IO = 500mA
ISW1
2.25
800
EF1
IO = 150mA
EF2
IO = 500mA
Fosc1
V
mA
86
%
79
%
1
1.2
1.4
MHz
1.47
1.5
1.53
V
LDO1
Output voltage
VOR1
IO = 10mA
Output current
IM1
Load regulation
VL1
IO = 1 to 30mA
30
10
75
mA
mV
Line regulation
VR1
VBAT = 3.1 to 4.5V, IO = 20mA
10
60
mV
Output voltage temperature
∆VT1
Ta = -30 to 75°C, IO = 10mA
Ripple rejection ratio
VRL1
IO = 10mA, VRR = -20dBV, fRR = 120Hz
65
dB
Output noise voltage
VON1
IO = 10mA, 10Hz < f < 100kHz
60
µVrms
VOR2
IO = 30mA
±100
ppm/°C
coefficient
LDO2
Output voltage
2.79
2.85
2.91
200
V
Output current
IM2
Load regulation
VL2
IO = 1 to 200mA
20
75
mA
mV
Line regulation
VR2
VBAT = 3.1 to 4.5V, IO = 130mA
10
60
mV
Output voltage temperature
∆VT2
Ta = -30 to 75°C, IO = 30mA
±100
ppm/°C
coefficient
Ripple rejection ratio
VRL2
IO = 30mA, VRR = -20dBV, fRR = 120Hz
65
dB
Output noise voltage
VON2
IO = 30mA, 10Hz < f < 100kHz
50
µVrms
LDO2 PS MODE
Output voltage
VOR2P
Output current
IM2P
IO = 30mA
2.76
2.85
2.94
200
V
mA
Load regulation
VL2P
IO = 1 to 200mA
20
75
mV
Line regulation
VR2P
VBAT = 3.1 to 4.5V, IO = 130mA
10
60
mV
Output voltage temperature
∆VT2P
Ta = -30 to 75°C, IO = 30mA
Ripple rejection ratio
VRL2P
IO = 30mA, VRR = -20dBV, fRR = 120Hz
60
dB
Output noise voltage
VON2P
IO = 30mA, 10Hz < f < 100kHz
60
µVrms
±100
ppm/°C
coefficient
LDO3
Output voltage
VOR3
Output current
IM3
IO = 30mA
2.79
2.85
2.91
150
V
mA
Load regulation
VL3
IO = 1 to 150mA
20
75
mV
Line regulation
VR3
VBAT = 3.1 to 4.5V, IO = 100mA
10
60
mV
Output voltage temperature
∆VT3
Ta = -30 to 75°C, IO = 30mA
±100
ppm/°C
coefficient
Ripple rejection ratio
VRL3
IO = 30mA, VRR = -20dBV, fRR = 120Hz
65
dB
Output noise voltage
VON3
IO = 30mA, 10Hz < f < 100kHz
50
µVrms
1.5
2.5
Ω
0
3
µA
LDO3B SW
Switch on-resistance
RSW3
IO = 50mA, SWCTL : HIGH
Switch leakage current
ISW3
SWCTL : LOW
Continued on next page.
No.A0585-2/11
LV5103LP
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
LDO4
Output voltage 1
VOR41
IO = 30mA
Output voltage 2
VOR42
IO = 200mA
Output current 1
IM41
Output current 2
IM42
VBAT = 3.4V, VOUT ≥ 3V
Load regulation 1
VL4
IO = 1 to 300mA
Load regulation 2
VL4L
Line regulation 1
VR4
Output voltage temperature
∆VT4
Ta = -30 to 75°C, IO = 30mA
3.03
3.1
3.17
V
3
3.1
3.2
V
450
mA
300
mA
30
100
VBAT = 3.4V, IO = 1 to 250mA
50
100
mV
VBAT = 3.4 to 4.5V, IO = 200mA
10
60
mV
±100
mV
ppm/°C
coefficient
Ripple rejection ratio
VRL4
IO = 30mA, VRR = -20dBV, fRR = 120Hz
65
dB
Output noise voltage
VON4
IO = 30mA, 10Hz < f < 100kHz
50
µVrms
Output voltage
VOR5
IO = 30mA
Output current 1
IM51
Output current 2
IM52
VBAT = 3.4V, VOUT ≥ 3V
Load regulation 1
VL5
IO = 1 to 150mA
75
150
mV
Load regulation 2
VL5L
VBAT = 3.4V, IO = 1 to 50mA
75
150
mV
Line regulation 1
VR5
VBAT = 3.4 to 4.5V, IO = 100mA
10
60
mV
Output voltage temperature
∆VT5
Ta = -30 to 75°C, IO = 30mA
Ripple rejection ratio
VRL5
IO = 30mA, VRR = -20dBV, fRR = 120Hz
65
dB
Output noise voltage
VON5
IO = 30mA, 10Hz < f < 100kHz
50
µVrms
LDO5
3.23
3.3
3.37
V
150
mA
150
mA
±100
ppm/°C
coefficient
LDO5 PS MODE
Output voltage
VOR5P
Output current
IM5P
IO = 30mA
3.2
3.3
3.4
150
V
mA
Load regulation 1
VL5P1
IO = 1 to 150mA
75
150
mV
Load regulation 2
VL5P2
VBAT = 3.4V, IO = 1 to 50mA
75
150
mV
Line regulation 1
VR5P
VBAT = 3.4 to 4.5V, IO = 100mA
10
60
mV
Output voltage temperature
∆VT5P
Ta = -30 to 75°C, IO = 30mA
Ripple rejection ratio
VRL5P
IO = 30mA, VRR = -20dBV, fRR = 120Hz
60
dB
Output noise voltage
VON5P
IO = 30mA, 10Hz < f < 100kHz
60
µVrms
±100
ppm/°C
coefficient
LDO6
Output voltage
VOR6
IO = 30mA
1.47
1.5
1.53
200
V
Output current
IM6
Load regulation
VL6
IO = 1 to 200mA
20
75
mA
mV
Line regulation 1
VR6
VBAT = 3.1 to 4.5V, IO = 130mA
10
60
mV
Output voltage temperature
∆VT6
Ta = -30 to 75°C, IO = 30mA
±100
ppm/°C
coefficient
Ripple rejection ratio
VRL6
IO = 30mA, VRR = -20dBV, fRR = 120Hz
65
dB
Output noise voltage
VON6
IO = 30mA, 10Hz < f < 100kHz
50
µVrms
LDO6 PS MODE
Output voltage
VOR6P
Output current
IM6P
IO = 30mA
1.45
1.5
1.55
10
V
mA
Load regulation
VL6P
IO = 1 to 10mA
10
75
mV
Line regulation 1
VR6P
VBAT = 3.1 to 4.5V, IO = 10mA
10
60
mV
Output voltage temperature
∆VT6P
Ta = -30 to 75°C, IO = 30mA
Ripple rejection ratio
VRL6P
IO = 30mA, VRR = -20dBV, fRR = 120Hz
60
dB
Output noise voltage
VON6P
IO = 30mA, 10Hz < f < 100kHz
60
µVrms
±100
ppm/°C
coefficient
Continued on next page.
No.A0585-3/11
LV5103LP
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
LDO7
Output voltage
VOR7
Output current
IM7
IO = 30mA
1.76
1.8
1.84
150
V
mA
Load regulation
VL7
IO = 1 to 150mA
75
150
mV
Line regulation 1
VR7
VBAT = 3.1 to 4.5V, IO = 100mA
10
60
mV
Output voltage temperature
∆VT7
Ta = -30 to 75°C, IO = 30mA
±100
ppm/°C
coefficient
Ripple rejection ratio
VRL7
IO = 30mA, VRR = -20dBV, fRR = 120Hz
65
dB
Output noise voltage
VON7
IO = 30mA, 10Hz < f < 100kHz
50
µVrms
LDO7 PS MODE
Output voltage
VOR7P
Output current
IM7P
Load regulation
VL7P
IO = 30mA
1.74
1.8
1.86
10
IO = 1 to 10mA
V
mA
75
150
10
60
mV
Line regulation 1
VR7P
VBAT = 3.1 to 4.5V, IO = 10mA
Output voltage temperature
∆VT7P
Ta = -30 to 75°C, IO = 30mA
Ripple rejection ratio
VRL7P
IO = 30mA, VRR = -20dBV, fRR = 120Hz
60
dB
Output noise voltage
VON7P
IO = 30mA, 10Hz < f < 100kHz
60
µVrms
Output voltage 1
VOR81
IO = 30mA
1.17
1.2
1.23
V
Output voltage 2
VOR82
IO = 200mA
1.13
1.2
1.27
V
Output current 1
IM81
Output current 2
IM82
VBAT = 3.4V, VOUT ≥ 1.1V
Load regulation
VL8
IO = 1 to 500mA
30
70
mV
Line regulation 1
VR8
VBAT = 3.1 to 4.5V, IO = 330mA
10
60
mV
Output voltage temperature
∆VT8
Ta = -30 to 75°C, IO = 30mA
±100
mV
ppm/°C
coefficient
LDO8
500
mA
500
mA
±100
ppm/°C
coefficient
Ripple rejection ratio
VRL8
IO = 30mA, VRR = -20dBV, fRR = 120Hz
65
dB
Output noise voltage
VON8
IO = 30mA, 10Hz < f < 100kHz
50
µVrms
LDO8 PS MODE
Output voltage
VOR8P
Output current
IM8P
IO = 30mA
1.16
1.2
1.24
10
V
mA
Load regulation
VL8P
IO = 1 to 10mA
30
100
mV
Line regulation 1
VR8P
VBAT = 3.1 to 4.5V, IO = 10mA
10
60
mV
Output voltage temperature
∆VT8P
Ta = -30 to 75°C, IO = 30mA
Ripple rejection ratio
VRL8P
IO = 30mA, VRR = -20dBV, fRR = 120Hz
60
dB
Output noise voltage
VON8P
IO = 30mA, 10Hz < f < 100kHz
60
µVrms
±100
ppm/°C
coefficient
DET24
Low-level detection voltage
VDL1
2.35
2.4
2.45
V
High-level detection voltage
VDH1
2.62
2.7
2.78
V
Low-level detection voltage
VDL2
2.3
2.4
2.5
V
High-level detection voltage
VDH2
3.1
3.2
3.3
V
300
400
Ω
0
1
µA
1.5
VBAT
V
0
0.3
V
VBATDET
BVLT Switch
BVLT switch on-resistance
RSWBV
IO = 3mA, BVLTON : HIGH
BVLT switch leakage current
ISWBV
BVLTON : LOW
Control Pins
High level 1
VH1
RFPDN, ADPTDETIN, PWRHOLD,
POWERSAVE, SWCTL, BVLTON, STCLR
Low level 1
VL1
RFPDN, ADPTDETIN, PWRHOLD,
POWERSAVE, SWCTL, BVLTON, STCLR
High level 2
VH2
PWRKEY
VBAT×0.8
VBAT
V
Low level 2
VL2
PWRKEY
0
VBAT×0.2
V
No.A0585-4/11
LV5103LP
Package Dimensions
Top View
Bottom View
0.35
5.0
30
21
20
(0.7)
0.4
5.0
0.35
31
40
11
10
1
0.85MAX
0.2
(0.7)
Allowable power dissipation, Pd max – mW
unit : mm (typ)
3302A
1500
1100
Pd max – Ta
Specified board : 40×50×0.8mm3,
4-layer (2S2P) printed circuit board
glass epoxy
Mounted on the circuit board
1000
550
500
0
– 30
0
30
60
90
0.05
0 NOM
Ambient temperature, Ta – °C
SANYO : VQLP40(5.0X5.0)
Control Pin Functions
Power Supply Control
RFPDN
ADPTDET
PWRKEY
PWRHOLD
Low
Low
Low
Low
Low
High
Low
Low
Low
High
High
High
Low
LDO3, 4
Off
On
Off
On
Off
On
On
Off
High
On
On
Off
Low
On
Off
Off
On
On
On
On
On
On
On
On
On
(ON/OFF1)
(ON/OFF2)
High
High
LDO2, 5, 6, 7, 8
On
High
High
LDO1
High
PS Mode
PWRSAVE
Mode
Low
PS mode
High
Normal mode
LDO3 Output Switch
SWCTL
Mode
Low
Switch off
High
Switch on
BVLT Output
BVLTON
Mode
Low
Switch off
High
Switch on
No.A0585-5/11
LV5103LP
LDO2O
VBAT1
LDO3O
LDO3S
LDO3B
SWCTL
LDO1O
LDO4S
LDO4O
VBAT2
Pin Assignment
30
29
28
27
26
25
24
23
22
21
LDO2S 31
20
LDO5O
DELAY 32
19
RFPDN
RESETO 33
18
PWRKEY
BVLT 34
17
PKEYDET
GNDSWREG 35
16
PWRHOLD
BVLTON 36
15
BGR
PWRSAVE 37
14
RREF
PGND 38
13
GNDM
ADPTDETIN 39
12
FBIN
SWOUT 40
11
VBATL7
1
2
3
4
5
6
7
8
9
10
STCLR
VBAT3
VBATL8
LDO8O
LDO8S
STATUS
LDO6S
LDO6O
VBATL6
LDO7O
LV5103LP
No.A0585-6/11
LV5103LP
VBAT1
VBAT1
VBAT1
LDO2
RFPDN
PWRSAVE
PWRHOLD
PWRKEY
PKEYDET
STATUS
ADPTDETIN
Block Diagram
VBAT1
RESETO
VBAT1
PS
D
Q
C
VBATDET
↑3.2V ↓2.4V
Q
R
VBAT1
VBAT1
LDO1
1.5V
30mA
STCLR
ON/OFF_2
VBATL8
LDO8S
LDO8O
2.2µF
ON/OFF_1
2.2µF
PS
ON/OFF_1
DELAY
DET
2.4V
RESETO
40kΩ
10µF
4.7µH VBAT3
SWOUT1
PGND
LDO3
2.85V/
150mA
ON/OFF_2
ON/OFF_1
LDO2S
LDO3O
LDO3S
SWCTL
ON/OFF_1
85kΩ
LDO2O
2.2µF
1µA
10µF FBIN
LDO2
2.85V/
200mA
VBAT1
0.01µF
2.2µF
LDO1O
ON/OFF_1
PS
LDO8
1.2V/
500mA
VBAT1
DC/DC1
2.4V/
800mA
LDO3B
PS
ON/OFF_2
LDO4
3.1V/
450mA
VBAT2 2.2µF
LDO4O
LDO4S
GNDSWREG
2.2µF VBATL6
LDO6O
VBAT3
PS
ON/OFF_1
LDO6
1.5V/
200mA
PS
ON/OFF_1
LDO5
3.3V/
150mA
2.2µF
LDO5O
VBAT1
LDO6S
BVLTON
BVLT
VBATL7
2.2µF
LDO7O
LDO7
1.8V/
150mA
ON/OFF_1
PS
GNDM 0.1µF
RREF
0.1µF
BGR
The three power supply pins VBAT1, VBAT2, and VBAT3 must be shorted together externally.
The three ground pins GNDM, PGND, and GNDSWREG must be shorted together externally and must always be at a
potential that is the lowest potential in the system.
No.A0585-7/11
LV5103LP
Equivalent Circuit Block Diagram
Pin No.
Pin
1
STCLR
16
PWRHOLD
19
RFPDN
37
PWRSAVE
39
ADPTDETIN
Functions
Equivalent Circuit
Input pins
VBAT1
1MΩ
Corresponding pin
18kΩ
GNDM
29
VBAT1
21
VBAT2
2
VBAT3
Power supply pins
VBAT*
GNDM
3
VBATL8
VBATL pins
9
VBATL6
The M1 transistor is only present in the
11
VBATL7
VBATL8 circuit.
VBAT3
VBAT1
M1
VBATL*
GNDM
4
LDO8O
LDO output pins
5
LDO8S
The LDO*O pins for LDO1, LDO5, and
7
LDO6S
LDO7 are shorted internally in the IC to
the corresponding LDO*S pin.
8
LDO6O
10
LDO7O
20
LDO5O
22
LDO4O
23
LDO4S
24
LDO1O
27
LDO3S
28
LDO3O
30
LDO2O
31
LDO2S
6
STATUS
VBAT*
LDO*O
LDO*S
GNDM
STATUS pin
VBAT1
STATUS
GNDM
Continued on next page.
No.A0585-8/11
LV5103LP
Continued from preceding page.
Pin No.
12
Pin
FBIN
Functions
Equivalent Circuit
Feedback resistor connection for the
FBIN
switching regulator block
85kΩ
40kΩ
GNDSWREG
14
RREF
RREF reference voltage
VBAT1
RREF
4.8MΩ
4.8MΩ
GNDM
15
BGR
BGR reference voltage
RREF
1kΩ
10kΩ
BGR
GNDM
17
RKEYDET
PKEYDET pin
VBAT1
LDO2S
100kΩ
200Ω
PKEYDET
GNDM
18
PWRKEY
PWRKEY pin
VBAT1
PWRKEY
18kΩ
GNDM
Continued on next page.
No.A0585-9/11
LV5103LP
Continued from preceding page.
Pin No.
Pin
Functions
25
SWCTL
SWCTL pin
26
LDO3B
LDO3B pin
Equivalent Circuit
LDO3O
VBAT1
500kΩ
18kΩ
SWCTL
LDO3B
GNDM
32
DELAY
DELAY pin
VBAT1
1kΩ
18kΩ
DELAY
200Ω
33
RESET
RESET pin
VBAT1
200Ω
RESET
GNDM
34
BVLT
36
BVLTON
BVLT and BVLTON pins
VBAT1
1MΩ
18kΩ
BVLT
BVLTON
200Ω
GNDM
40
SWOUT
SWREG output block
VBAT3
VBAT1
1kΩ
PGND
SWOUT
GNDM
No.A0585-10/11
LV5103LP
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted
in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
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otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual
property rights or other rights of third parties.
This catalog provides information as of January, 2007. Specifications and information herein are subject
to change without notice.
PS No.A0585-11/11