SANYO LV5608LP

Ordering number : ENA0691
Bi-CMOS LSI
LV5608LP
For CCD
Charge pump power supply
Overview
The LV5608LP is charge pump power supply for CCD.
Functions
• The charge pump boosts the +3.3V input by multiplying with +6, then by -3 to regulate the voltage to the specified level.
• The output voltage is +15V, -7.5V necessary for CCD.
• Soft start function incorporated, which reduces the inrush current at start of charge pump.
• Short-circuit protection function incorporated.
• Four types of operating frequency selectable.
Specifications
Absolute Maximum Ratings at Ta = 25°C
Parameter
Maximum supply voltage
Allowable power dissipation
Symbol
Conditions
Ratings
Unit
VDD max
Pd max
3.5
with specified substrate *1
V
0.8
W
Operating temperature
Topr
-20 to +80
°C
Storage temperature
Tstg
-40 to +125
°C
*1 : Specified substrate : 40×50×0.8mm3, glass epoxy four-layer (2S2P) board
Allowable Operating Ratings at Ta = 25°C, PGND = 0V
Parameter
Symbol
Ratings
Conditions
min
Supply voltage
VDD
Input CLK frequency
CKIN
SEL=H *2
Input High voltage
VINH
Input Low voltage
VINL
typ
3.0
Unit
max
3.3
3.45
V
0.1
8
MHz
EN pin
0.7VDD
VDD
V
EN pin
-0.1
0.4
V
*2 : Note that the charge pump frequency should be adjusted with S0/S1 so that it becomes 2 MHz or less.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
32207 MS PC 20060728-S00004 No.A0691-1/8
LV5608LP
Electrical Characteristics at Ta = 25°C, VDD = 3.3V, SGND = 0V, PGND = 0V,IH=20mA, IL=5mA, S0=H, S1=L,
Unless otherwise specified
Parameter
Symbol
Ratings
Conditions
min
Circuit current dissipation
IDD1
EN = L
15
30
μA
EN = H no load
17
25
mA
20
mA
IH ave
VDD = 3.0V
VL output load current
IL ave
VDD = 3.0V
Reference voltage
VREF
VDD = 3.0 to 3.45V, design guarantee
-8
V
15
15.35
-7.65
-7.5
-7.25
After capacitive discharge
-50
0
50
VLoff → VHoff
4.5
5.6
7.5
ms
12
18
32
ms
20
30
mV
10
55
mV
17.5
22.5
μA
Tmask
ΔVH
VL load regulation
ΔVL
Load 1mA → 20mA
Load 0.5mA → 8mA
Iin
VH monitoring voltage
V
14.55
VH load regulation
Input pin current
1.37
VL
Toff
Protection circuit masking time
V
1.239
VH
VOFF
VH holding time
mA
1.305
Ta = -20°C to +80°C, design guarantee
Output voltage at OFF
max
IDD2
VH output load current
Output voltage accuracy
Unit
typ
Pins EN, S0, S1, SEL and CLK
12.6
VTvlon
Power efficiency
Peff
Inrush current
Irush
Oscillation frequency
f clk
V
mV
10
CP+Regulator (VH+VL)
V
70
1.5
%
2
600
mA
2.5
MHz
Note : The design specification items are design guarantees and are not measured.
Package Dimensions
unit : mm (typ)
3322
SIDE VIEW
TOP VIEW
BOTTOM VIEW
13
18
12
19
3.5
(C0.116)
(0.13)
(0.125)
3.5
0.4
7
24
6
1
0.5
(0.5)
0.25
(0.035)
0.83
SIDE VIEW
Allowable power dissipation, Pd max – W
1.0
Pd max – Ta
Specified circuit board : 40×50×0.8mm3, glass epoxy
four-layer (2S2P) board
With specified substrate
0.8
0.6
0.4
0.2
0.15
0.36
Independent IC
0.07
0
– 20
SANYO : VCT24(3.5X3.5)X01
0
20
40
60
80
100
Ambient temperature, Ta – °C
No.A0691-2/8
LV5608LP
TEST
VL C33
VL C32
C31A
PGND1
C31B
Pin Assignment
24
23
22
21
20
19
17 C12A
EN
3
16 C11A
SGND
4
15 PVDD
SVDD
5
14 C12B
CLK
6
13 PGND
8
9
10
11
12
C11B
7
NC
2
C21A
S1
VH C22
18 VM C13
VH C23
1
SEL
S0
Top view
Pin Function
Pin No.
Name
Mode
1
S0
Charge pump frequency changeover pin
2
S1
Charge pump frequency changeover pin
3
EN
System enable pin (Hi active)
4
SGND
Small signal system GND pin
5
SVDD
Small signal system VDD pin
6
CLK
External CLK input pin
7
SEL
CLK selector pin (L: built-in CLK, H: external CLK)
8
VH C23
VH (+15V) regulator output pin
9
VH C22
Boost voltage output (+6VDD)
10
C21A
11
NC
12
C11B
Boost capacitor connection pin (driver side)
13
PGND
+3-fold boost power GND pin
14
C12B
Boost capacitor connection pin (driver side)
15
PVDD
Power system VDD pin
16
C11A
Boost capacitor connection pin (load transfer side)
17
C12A
Boost capacitor connection pin (load transfer side)
18
VM C13
19
C31B
20
PGND1
21
C31A
22
VL C32
Boost voltage output (-3VDD)
23
VL C33
VL (-7.5V) regulator output pin
24
TEST
Boost capacitor connection pin (on the load transfer side)
Boost voltage output (+3VDD)
+2-fold and -1-fold boost capacitor connection pin (driver side)
+2-fold and -1-fold boost power GND pin
-1-fold boost capacitor connection pin (load transfer side)
Test pin (OPEN or GND short-circuited)
No.A0691-3/8
LV5608LP
Block Diagram
10μF
/VDD
VDD
3.3V
15
14
SVDD
5
+3 times
step up
circuit
1μF
/VDD
4
TSD
PGND
PGND1
To A
bandgap
voltage
reference
12
16
C12B
C11B 1μF
/VDD
1μF
/2VDD
C11A
17
+3VDD
20
C12A 2.2μF
/3VDD
18
VM C13
A
C31B
19
0.22μF
/3VDD
C31A
1μF
/3VDD
PGND
13
PVDD
VL C32
VL C33
21
22
23
1μF
-1 times
step up
circuit
-3VDD
VL Reg
+2 times
step up
circuit
timing
generator
+6VDD
sequence
generator
VH Reg
10
9
1μF
/3VDD
C21A
2.2μF
/6VDD
VH C22
2.2μF
8
VH C23
VH=+15V
VL=-7.5V
2bitMUX
1 S0
EN 3
2 S1
2MHz
oscillator
divider
TEST 24
MUX
6
7 SEL
Lo : internal CLK
Hi : external CLK
CLK
No.A0691-4/8
LV5608LP
Short-circuit Protection
VH and VL output pins incorporate the short-circuit protection function.
When the output pins are short-circuited to allow the large current to flow, IC is latched OFF to interrupt output.
To reset from the interrupted state, set the EN pin to L, then reset it again to H.
Frequency Selection
The charge pump operating frequency can be changed with S0 and S1
logics.
For light load, the reactive load can be reduced by lowering the
operating frequency.
SEL logic also enables synchronous operation with external CLK.
The charge pump is operated with the frequency equivalent to 1/2 of
input CLK.
(The IC internal oscillator is used for the sequence, so that it is
normally ON regardless of SEL.
S0
S1
CP operating frequency
SEL=L
For minimum 9.4ms after startup with the EN signal set to H, the IC
internal clock is used to operate the charge pump with 1 MHz regardless
of the input of SEL, S0, and S1 pins. After the 9.4ms(min) period, the
charge pump frequency is changed over according to the state of SEL,
S0, and S1 pins. The changeover frequency is set as shown in the table
right.
SEL=H
L
L
1MHz
1/2 CLK
H
L
500kHz
1/4 CLK
L
H
250kHz
1/8 CLK
H
H
125kHz
1/16 CLK
SEL
L
IC internal oscillator
H
Synchronous operation with external CLK
Internal Equivalent Circuit
S0 pin
S1 pin
SEL pin
D
CLK pin
clk
clk/2
clk/4
clk/8
Q
D
B
Y
A
2-input multiplexer
VH regulator start
signal
L
H in 9.4 ms (min) after EN = H
Charge pump
clock
4-input multiplexer
Q
Internal
1MHz
Y
Q
Q
D
Q
Q
D
Q
Q
Truth Table
S0 S1
L
L
L
H
L
H
H
H
Y
clk
clk/2
clk/4
clk/8
Truth Table
SEL Y
L A
H B
External signal input pin
Internal signal
No.A0691-5/8
LV5608LP
External clock signal startup sequence
Set EN = H by setting V
DD
at 3 V or more.
V
Stop at EN = L or over-current protection
Never set V
DD at 3 V or less till the
sequence is over (7.5 ms after EN = L).
DD
EN
Charge pump
(C23)
Regulator
(C22)
S0
Frequency selection
Do not attempt change the signal after 9.4 ms from EN = H.
Frequency selection
Do not attempt change the signal after 9.4 ms from EN = H.
Frequency selection
S1
Frequency selection
Do not attempt change the signal after 9.4 ms from EN = H.
Frequency selection
Do not attempt change the signal after 9.4 ms from EN = H.
Frequency selection
SEL
External clock selected
Do not attempt change the signal after 9.4 ms from EN = H.
External clock selected
Do not attempt change the signal after 9.4 ms from EN = H.
External clock selected
* Internal 1 MHz
SEL=L (Internal clock)
* CP clock 1MHz
* CP clock 500kHz
* CP clock 250kHz
* CP clock 125kHz
CLK
SEL=H (External clock)
* CP clock 1/2φ
* CP clock 1/4φ
* CP clock 1/8φ
* CP clock 1/16φ
* IC internal signal
Internal clock
started at 1 MHz
9.4ms(min)
Steady operation
Internal clock
Stop
started at 1 MHz
sequence
9.4ms(min)
7.5ms(max)
Steady operation
Stop
sequence
7.5ms(max)
EN Pin and VDD
Though the sequence operation is made at startup, startup is not effectuated if the internal circuit has not been reset.
To reset the internal circuit, it is necessary to keep the EN pin at L till VDD becomes 3V or more.
Note that operation with VDD and EN pin short-circuited cannot be made.
Since the sequence operation is incorporated for stop of operation, the charge pump remains active till 7.5ms (max)
passes after setting the EN pin to L. During this period, VDD must be kept at 3V or more to allow the internal sequence
logic to operate correctly.
No.A0691-6/8
LV5608LP
Rise/fall Sequence
EN
mA
MAX
IDD
0
VREF
+6VDD
+3VDD
Charge
pump
output
-3VDD
VH
VTvlon
REG
output
VL
5.5ms
2ms
2ms
3.3ms
6.1ms*
Toff
18.9ms
*The VL startup time at VH ≥ 10V and after elapse of 6.1ms is the reference time for CLK = 2MHz.
No.A0691-7/8
LV5608LP
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performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted
in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
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This catalog provides information as of March, 2007. Specifications and information herein are subject
to change without notice.
PS No.A0691-8/8