SANYO MCH6646

MCH6646
Ordering number : ENA0112
N-Channel Silicon MOSFET
MCH6646
General-Purpose Switching Device
Applications
Features
•
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
1.8V drive.
Composite type with 2 MOSFETs contained in a single package, facilitating high-density mounting.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
Gate-to-Source Voltage
VGSS
±10
V
ID
2.0
A
Drain Current (DC)
Drain Current (Pulse)
IDP
PD
Allowable Power Dissipation
V
PW≤10µs, duty cycle≤1%
8.0
A
Mounted on a ceramic board (900mm2✕0.8mm) 1unit
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
V(BR)DSS
IDSS
IGSS
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
Ratings
min
typ
Unit
max
20
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
0.4
VDS=10V, ID=1A
1.4
V
1
µA
±10
µA
1.3
V
Forward Transfer Admittance
VGS(off)
yfs
ID=1.0A, VGS=4V
ID=0.5A, VGS=2.5V
120
160
mΩ
Static Drain-to-Source On-State Resistance
RDS(on)1
RDS(on)2
160
225
mΩ
ID=0.1A, VGS=1.8V
VDS=10V, f=1MHz
220
330
mΩ
Input Capacitance
RDS(on)3
Ciss
115
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
35
pF
Reverse Transfer Capacitance
Crss
VDS=10V, f=1MHz
25
pF
Marking : WW
2.4
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
D2805PE MS IM TB-00002022 No. A0112-1/4
MCH6646
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Turn-ON Delay Time
td(on)
See specified Test Circuit.
7.5
ns
Rise Time
tr
td(off)
See specified Test Circuit.
27
ns
See specified Test Circuit.
20
ns
tf
See specified Test Circuit.
30
ns
Qg
VDS=10V, VGS=4V, ID=2A
1.78
nC
Gate-to-Source Charge
Qgs
nC
Qgd
VDS=10V, VGS=4V, ID=2A
VDS=10V, VGS=4V, ID=2A
0.34
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
VSD
IS=2A, VGS=0
0.86
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Package Dimensions
0.48
6
5
4
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1
2
3
Top view
0.25
Bottom View
0.3
0.15
6
0.25
3
2
0.65
1
0.07
1.6
2.1
5
V
Electrical Connection
unit : mm
7022-006
4
nC
1.2
6
5
4
0.85
2.0
1 : Source1
2 : Gate1
3 : Drain2
4 : Source2
5 : Gate2
6 : Drain1
1 2 3
Top View
SANYO : MCPH6
Switching Time Test Circuit
VIN
VDD=10V
4V
0V
ID=1.0A
RL=10Ω
VIN
D
VOUT
PW=10µs
D.C.≤1%
G
50Ω
MCH6646
ID -- VDS
V
VDS=10V
1.8
1.8
C
0.8
0.6
0.4
0.2
0
°C
VGS=1.0V
1.0
75 °
0.5
1.2
--25
1.0
1.4
5°C
Drain Current, ID -- A
1.6
8.0V
1.5
ID -- VGS
2.0
3.0V
4.0V
2.5V
2.0
Drain Current, ID -- A
S
Ta=
2
P.G
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
0.9
1.0
IT10328
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Gate-to-Source Voltage, VGS -- V
1.6
IT10329
No. A0112-2/4
MCH6646
RDS(on) -- VGS
Ta=25°C
250
ID=0.1A
0.5A
200
1.0A
150
100
50
2
4
6
8
Gate-to-Source Voltage, VGS -- V
1
0.
I D=
2.5V
S=
4.0V
S=
A, VG
, VG
0.5A
200
I D=
.0
150
I D=1
100
50
--40
--20
0
20
40
60
80
100
120
140
VDS=10V
160
IT10340
IS -- VSD
5
VGS=0V
3
2
°C
25
5
3
2
°C
3
2
--25
°C
75
0.1
7
5
C
7
25°
--
1.0
7
5
5°C
=
Ta
1.0
°C
25
Ta=
7
2
Source Current, IS -- A
Forward Transfer Admittance, yfs -- S
250
1.
S=
A, VG
Ambient Temperature, Ta -- °C
3
3
2
0.1
0.01
0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
Drain Current, ID -- A
3
5
0
0.2
0.6
tf
td(off)
3
2
td(on)
10
7
tr
5
1.2
IT10333
f=1MHz
Ciss, Coss, Crss -- pF
5
1.0
2
100
7
0.8
Ciss, Coss, Crss -- VDS
3
VDD=10V
VGS=4V
2
0.4
Diode Forward Voltage, VSD -- V
IT10332
SW Time -- ID
3
Switching Time, SW Time -- ns
8V
IT10330
yfs -- ID
5
300
0
--60
0
0
RDS(on) -- Ta
350
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
300
Ciss
100
7
5
Coss
Crss
3
2
3
2
0.01
10
2
3
5
7 0.1
2
3
5
7 1.0
Drain Current, ID -- A
3
5
0
10
7
5
Drain Current, ID -- A
2.5
2.0
1.5
1.0
3
2
0
1.0
8
1.5
Total Gate Charge, Qg -- nC
2.0
IT10336
10
12
14
16
18
20
IT10335
ASO
IDP=8A
ID=2A
<10µs
10
0
1m µs
s
10
1.0
7
5
DC
ms
10
0m
op
s
er
3
2
ati
on
Operation in this
area is limited by RDS(on).
0.1
7
5
3
2
0.5
0.5
6
2
3.0
0
4
Drain-to-Source Voltage, VDS -- V
VDS=10V
ID=2A
3.5
2
IT10334
VGS -- Qg
4.0
Gate-to-Source Voltage, VGS -- V
2
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)1unit
0.01
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
Drain-to-Source Voltage, VDS -- V
2
3
IT10337
No. A0112-3/4
MCH6646
PD -- Ta
Allowable Power Dissipation, PD -- W
1.0
M
0.8
ou
nt
ed
on
ac
er
0.6
am
ic
bo
ar
d(
90
0.4
0m
m2
✕0
.8m
0.2
m
)1
un
it
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT10338
Note on usage : Since the MCH6646 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of December, 2005. Specifications and information herein are subject
to change without notice.
PS No. A0112-4/4