SANYO SCH1416

SCH1416
Ordering number : ENN7725
SCH1416
N-Channel Silicon MOSFET
General-Purpose Switching Device Applications
Features
•
•
•
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
20
Gate-to-Source Voltage
VGSS
±20
V
2
A
Drain Current (DC)
ID
Drain Current (Pulse)
IDP
PD
Allowable Power Dissipation
PW≤10µs, duty cycle≤1%
Mounted on a ceramic board (900mm2✕0.8mm)
V
8
A
0.8
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Ratings
min
typ
Unit
max
ID=1mA, VGS=0
VDS=20V, VGS=0
VGS=±16V, VDS=0
20
IDSS
IGSS
VGS(off)
yfs
VDS=10V, ID=1mA
VDS=10V, ID=1A
1.2
RDS(on)1
RDS(on)2
ID=1A, VGS=10V
ID=0.5A, VGS=4V
120
160
mΩ
310
440
mΩ
Input Capacitance
Ciss
77
pF
Output Capacitance
Coss
VDS=10V, f=1MHz
VDS=10V, f=1MHz
29
pF
Reverse Transfer Capacitance
Crss
21
pF
Turn-ON Delay Time
td(on)
tr
VDS=10V, f=1MHz
See specified Test Circuit.
6.5
ns
See specified Test Circuit.
3
ns
See specified Test Circuit.
10.5
ns
See specified Test Circuit.
4.2
ns
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Rise Time
Turn-OFF Delay Time
Fall Time
V(BR)DSS
Conditions
td(off)
tf
0.84
Marking : KR
V
1
µA
±10
µA
2.6
1.4
V
S
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
53104 TS IM TA-100780 No.7725-1/4
SCH1416
Continued from preceding page.
Parameter
Symbol
Ratings
Conditions
min
typ
Unit
max
Total Gate Charge
Qg
VDS=10V, VGS=10V, ID=2A
2.9
nC
Gate-to-Source Charge
Qgs
VDS=10V, VGS=10V, ID=2A
0.7
nC
Gate-to-Drain “Miller” Charge
Qgd
VDS=10V, VGS=10V, ID=2A
0.4
Diode Forward Voltage
VSD
IS=2A, VGS=0
Package Dimensions
unit : mm
2221
0.05
0.2
VDD=10V
ID=1A
RL=10Ω
VOUT
VIN
0.15
6 5 4
PW=10µs
D.C.≤1%
1.5
1.6
V
10V
0V
Side View
D
0.05
1.2
Switching Time Test Circuit
VIN
Top View
1.6
nC
0.88
Bottom View
0.56
0.25
Side View
G
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
2 3
0.5
1
P.G
50Ω
SCH1416
S
SANYO : SCH6
Ta=
--25
°C
75°
C
VDS=10V
V
4.0
0.8
1.4
1.2
1.0
0.8
0.6
3.0V
0.4
VGS=2.5V
0.2
0.4
5°C
°C --2
5°C
V
3.5
1.2
25
Drain Current, ID -- A
1.6
Ta=
7
6.0
10V
1.6
Drain Current, ID -- A
V
1.8
0
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Drain-to-Source Voltage, VDS -- V
0.9
0
1.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Gate-to-Source Voltage, VGS -- V
IT06917
RDS(on) -- VGS
800
C
ID -- VGS
2.0
25°
ID -- VDS
2.0
4.5
IT06918
RDS(on) -- Ta
600
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Ta=25°C
700
ID=1.0A
600
0.5A
500
400
300
200
100
0
0
2
4
6
8
10
12
14
16
Gate-to-Source Voltage, VGS -- V
18
20
IT06919
500
400
=4V
, VGS
.5A
I D=0
300
200
0V
, V S=1
I D=1.0A G
100
0
--60
--40
--20
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
160
IT06920
No.7725-2/4
SCH1416
yfs -- ID
1.0
25
7
5
°C
C
5°
--2 °C
=
75
Ta
3
2
0.1
7
5
3
2
1.0
7
5
3
2
0.1
7
5
3
3
2
2
0.01
0.001
2 3
5 7 0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
Drain Current, ID -- A
0.01
0.3
5
0.4
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT06922
Ciss, Coss, Crss -- VDS
3
VDD=10V
VGS=10V
2
0.5
Diode Forward Voltage, VSD -- V
IT06921
SW Time -- ID
3
f=1MHz
2
100
7
Ciss, Coss, Crss -- pF
Switching Time, SW Time -- ns
VGS=0
Ta=
75°C
25°C
--25°C
2
IF -- VSD
10
7
5
VDS=10V
Forward Current, IF -- A
Forward Transfer Admittance, yfs -- S
3
5
tf
3
2
td(off)
10
td(on)
7
5
tr
3
100
Ciss
7
5
Coss
3
Crss
2
2
1.0
0.01
10
2
3
5
7
2
0.1
3
5
7
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
2.5
3.0
Total Gate Charge, Qg -- nC
3.5
IT06925
PD -- Ta
1.0
0.8
n
2.0
s
0µ
3
2
io
1.5
s
s
1.0
1m
ID=2A
at
er
0.5
<10µs
IDP=8A
s
0
20
IT06924
m
0
18
ASO
1.0
7
5
Operation in this
area is limited by RDS(on).
0.1
7
5
3
2
1
16
op
2
14
C
3
12
0m
4
10
D
5
8
10
6
6
10
3
2
8
7
4
10
10
7
5
VDS=10V
ID=2A
9
2
Drain-to-Source Voltage, VDS -- V
VGS -- Qg
10
Allowable Power Dissipation, PD -- W
0
1.0
IT06923
Ta=25°C
Single pulse
Mounted on a ceramic board (900mm2✕0.8mm)
0.01
0.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
5 7 10
Drain-to-Source Voltage, VDS -- V
2 3
5
IT06926
M
ou
nt
0.6
ed
on
ac
er
am
ic
bo
ar
0.4
d(
90
0m
m2
✕0
.8m
0.2
m
)
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT06927
No.7725-3/4
SCH1416
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer’s
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer’s products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be exported without obtaining the export license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of May, 2004. Specifications and information herein are subject
to change without notice.
PS No.7725-4/4