SGF35 Ordering number : ENN7926 N-Channel GaAs MESFET SGF35 For C to Ku-Band Local Oscillator and Amplifier Features • • • • Lower Phase Noise. Highly reliable protection film. Automatic surface mounting supported. MCPH4 package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDS 6 Gate-to-Source Voltage VGS --5 Drain Current ID Allowable Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg Mounted on copper foil (area : 0.96mm2) Glass epoxy board (145✕80✕1.6mm) V V 100 mA 400 mW 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Gate-to-Source Leakage Current Saturated Drain Current Cutoff Voltage Forward Transfer Admittance IGSO IDSS VGS(off) yfs Conditions VGS=--5V VDS=3V, VGS=0 VDS=3V, ID=100µA Ratings min typ max Unit --10 µA 30 50 70 mA --0.5 --1.6 --2.7 VDS=3V, ID=10mA 34 V mS Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 33004SG TS IM TA-101124 No.7926-1/5 SGF35 Package Dimensions unit : mm 1316 (Side view) 0.25 (Bottom view) 3 1 1.3 0.07 1.6 4 2 0.25 2.1 0.15 0.3 2.0 (Top view) 4 3 1 2 1 : Gate 2 : Source 3 : Drain 4 : Source 0.85 (Side view) SANYO : MCPH4 S-Parameter SGF35 VDS=3V IDS=30mA FREQUENCY S11 S21 ANG MAG S12 ANG MAG S22 MHz MAG 3000.0000 0.801 --74.0 2.944 111.4 0.048 ANG 56.0 MAG 0.675 ANG --35.0 4000.0000 0.731 --94.3 2.622 93.6 0.052 53.0 0.659 --43.3 5000.0000 0.678 --110.8 2.363 78.4 0.056 54.3 0.646 --50.0 6000.0000 0.622 --122.9 2.230 65.2 0.063 58.6 0.636 --56.5 7000.0000 0.544 --137.6 2.181 50.8 0.077 60.6 0.630 --66.3 8000.0000 0.459 --162.4 2.120 34.6 0.094 58.2 0.627 --76.9 9000.0000 0.446 168.1 2.007 18.3 0.112 53.3 0.614 --87.1 10000.0000 0.475 147.3 1.904 4.1 0.133 48.1 0.587 --96.7 11000.0000 0.488 129.6 1.857 --11.1 0.156 40.4 0.543 --111.2 12000.0000 0.500 104.0 1.827 --29.0 0.187 27.9 0.550 --133.8 13000.0000 0.575 74.3 1.676 --49.1 0.200 13.0 0.573 --158.2 14000.0000 0.669 58.8 1.467 --65.7 0.206 --0.4 0.546 --178.2 15000.0000 0.716 52.3 1.345 --81.0 0.213 --11.5 0.507 159.5 16000.0000 0.752 40.7 1.257 --99.6 0.226 --27.8 0.516 126.4 SGF35 VDS=3V IDS=30mA FREQUENCY GUmax GAmax S21^2 S12^2 MHz dB dB dB dB K Delay Mason’s U G1 G2 ns dB dB dB 3000.0000 16.47 9.38 --26.35 0.700 0.054 23.536 4.45 4000.0000 14.17 8.37 --25.60 0.910 0.045 22.112 3.32 2.64 2.47 5000.0000 12.49 14.50 7.47 --25.04 1.080 0.040 20.756 2.67 2.34 6000.0000 11.33 13.07 6.96 --24.06 1.100 0.031 19.970 2.12 2.25 7000.0000 10.49 12.53 6.77 --22.29 1.110 0.041 20.335 1.52 2.19 8000.0000 9.72 12.15 6.52 --20.57 1.050 0.044 18.841 1.03 2.17 2.06 9000.0000 9.07 6.05 --19.00 0.950 0.047 17.935 0.96 10000.0000 8.54 5.59 --17.50 0.850 0.037 17.025 1.11 1.84 11000.0000 8.07 5.37 --16.13 0.810 0.044 14.524 1.18 1.52 12000.0000 8.05 5.23 --14.58 0.700 0.057 14.643 1.25 1.57 13000.0000 7.96 4.49 --13.97 0.620 0.057 14.090 1.75 1.73 14000.0000 7.45 3.33 --13.74 0.570 0.033 13.143 2.58 1.54 15000.0000 6.99 2.58 --13.42 0.570 0.046 11.181 3.12 1.29 16000.0000 6.95 1.99 --12.90 0.540 0.055 10.481 3.62 1.35 No.7926-2/5 SGF35 S-Parameter VDS=3V IDS=30mA, START 3GHz STOP 16GHz S11 S21 90° 50 60 120° 25 100 15.0GHz 10 3.0GHz 150 12.0GHz 150° 200 250 9.0GHz 9.0GHz 0 25 10 30° 6.0GHz 100 50 250 150 ±180° 0° 12.0GHz --250 --200 --150 --10 6.0GHz --30° --150° --100 R max=1 3.0GHz --25 15.0GHz --60° R max=5 --120° --50 --90° IT07528 S12 IT07529 S22 90° 50 60° 120° 25 100 150 150° 30° 200 250 10 9.0GHz 6.0GHz 3.0GHz ±180° 12.0GHz 15.0GHz 0° 0 10 25 50 100 150 250 15.0GHz 3.0GHz --10 12.0GHz --30° --150° 9.0GHz --60° --120° --90° R max=0.5 IT07530 6.0GHz --250 --200 --150 --100 R max=1 --25 --50 IT07531 No.7926-3/5 SGF35 Oscillation Characteristics Measured by the Application JIG for SGF35 Equivalent Circuit of the Application JIG (Recommended bias condition is VD=5V, ID=31mA) VD 1000pF 10Ω Dielectric Resonator D G Z0, θB GaAsMESFET S OUTPUT 51Ω 10Ω ATTEN 30dB RL 20.0dBm 10dB / MKR 10.00dBm 10.678GHz [hp] 4352S : 10.678GHz 0 VD=5V ID=37mA --57.246dBc / Hz @ 1kHz --20 S Phase noise [dBC/Hz] --40 MKR 10.678GHz 10.00dBm K --60 --80 --100 --120 --140 --160 --180 CENTER 10.765GHz RBW 10kHz VBW 10kHz SPAN 1.000MHz SWP 50ms --200 1k 2 3 5 710k 2 3 5 7100k 2 3 5 71M [f] [dBc / Hz] VS f [Hz] 2 3 5 710M IT06797 IT06796 No.7926-4/5 SGF35 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2004. Specifications and information herein are subject to change without notice. PS No.7926-5/5