SANYO SR10020

Ordering number : EISB*0001A
Ultrathin Miniature Package
SR10000 Series
1-channel Step-up DC/DC
Converter ICs
Overview
The SR10000 Series is a SANYO’s original SIP (System In Package) that includes a DC/DC converter control IC, a
power MOSFET and a Schottky barrier diode. All these components are mounted into one thin-and-small package by
utilizing SANYO’s high-density mounting technology, “Integrated System in Board (ISB)”.
The advantage using this DC/DC converter package is that it greatly decreases its mounting area and space, compared
with when the same circuit is set up with the discrete devices. In addition to that, it is very easy to assemble step-up
switching power supply with by just adding voltage-setting resistance, inductor and capacitors.
Functions and Features
• Since the SR10000 Series packages a voltage step-up DC/DC converter IC as well as power MOSFET and Schottky
barrier diode devices in the same package with the minimum trace length between components, it can provides high
efficiency and superior characteristics including low output ripple. In particular the mounting area required by these
components is reduced when compared to implementations using discrete devices.
• The output voltage is set using an external resistor.
• Standby function: Standby mode current=1µA (maximum)
• Automatic PWM/PFM switching control (SR10020, SR10040, SR10050)
• External PWM/PFM switching control (SR10030, SR10060, SR10070)
• Oscillator frequency: 100kHz (SR10060), 180kHz (SR10030), 300kHz (SR10020, SR10070), 500kHz (SR10040,
SR10050) (accuracy±15%)
• The values given in this data sheet for models SR10060 is tentative and subject to change before
putting into mass production.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before using any SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
N2206 / 41006HKIM No.0001-1/8
SR10000 Series
Comparison of Functions
DC/DC Controller IC
Type No.
Control System
SR10020
SR10030
SR10040
SR10050
SR10060
SR10070
TR Maximum Rating
Di Maximum Rating
Output Setting *1
Input Voltage Range
Oscillator Frequency
VDSS
ID
VRRM
IO
0.9V to 10V
300kHz
30V
2.5A
30V
1A
1.5V to 20V
0.9V to 10V
180kHz
30V
2.5A
30V
1A
1.5V to 20V
0.9V to 10V
500kHz
30V
2.5A
30V
1A
1.5V to 20V
0.9V to 10V
500kHz
30V
2.5A
15V
2A
1.5V to 10V
0.9V to 10V
100kHz
20V
3A
30V
1A
1.5V to 13V
0.9V to 10V
300kHz
20V
3A
15V
2A
1.5V to 10V
Automatic PWM/PFM
switching control
External PWM/PFM
switching control
Automatic PWM/PFM
switching control
Automatic PWM/PFM
switching control
External PWM/PFM
switching control
External PWM/PFM
switching control
*1: The output setting maximum values are voltages that are 1/1.5 times the VDSS and VRRM as a general rule of
thumb, and they are provided to serve as a reference only. As such, it must be verified during actual operation that
they do not exceed the rated voltages.
Package Dimensions
unit : mm
3.4
3.4
0.75
MIN 0.6
1.7
1
2
3
4
B
5
0.65 0.4
0.65 0.4
1.7
A
0.1
C
1.7
0.4 0.65
D
E
0.4 0.65
1.7
0.35
No.0001-2/8
SR10000 Series
Pin Layout and Internal Equivalent Circuit Block Diagram
1
2
3
4
1D, 1E
2D, 2E, 3E
5
3D
Di
A
4D, 4E, 5D, 5E
B
TR
C
EXT
D
IC
VDD
2A, 2B, 2C, 3A, 3B
3C, 4A, 4B, 4C, 5B
E
CE
GND
FB
5C
Bottom view
1B, 1C
5A
1A
Specifications
Absolute Maximum Ratings at Ta = 25°C
Device
IC
TR
Di
Parameter
Symbol
Conditions
Ratings
Unit
VDD pin voltage
VDD
-0.3 to +12
FB pin voltage
VFB
-0.3 to +12
V
CE pin voltage
VCE
-0.3 to +12
V
-0.3 to VDD+0.3
V
EXT pin voltage
VEXT
EXT pin current
IEXT
Drain-to-source voltage 1
VDSS1
Gate-to-source voltage 1
VGSS1
±12
V
Drain current 1
ID1
2.5
A
Drain-to-source voltage 2
VDSS2
20
V
Gate-to-source voltage 2
VGSS2
Drain current 2
ID2
Allowable power dissipation
PD-T
60mm×60mm×1.6mm3 FR4 board
700
mW
Reverse voltage 1
VRRM1
SR10020, SR10030, SR10040, SR10060
30
V
Output current 1
I O1
1
A
Reverse voltage 2
VRRM2
SR10050, SR10070
15
V
Output current 2
I O2
2
A
Allowable power dissipation
PD-D
±100
SR10020, SR10030, SR10040, SR10050
SR10060, SR10070
60mm×60mm×1.6mm3 FR4 board
30
V
mA
V
±10
V
3
A
750
mW
Operating temperature
Topr
-30 to +85
°C
Storage temperature
Tstg
-40 to +125
°C
No.0001-3/8
SR10000 Series
Electrical Characteristics
Overall Operating Characteristics at Ta = 25°C, in the specified test circuit
Parameter
Symbol
Ratings
Conditions
min
Unit
typ
max
Output voltage
VOUT
VIN=2V, IO=10mA
Output voltage setting range
VOSET
VIN=VOSET×0.6, VDD=3.3V, IOUT=10mA
1.5
FB control voltage
VFB
Supply voltage
VDD
*3
1.8
Operation start voltage
VST
IO=1mA
0.9
V
Current dissipation
IDD
VIN=2V, IO=0mA SR10060
29
41
µA
VIN=2V, IO=0mA SR10030
45
64
µA
VIN=2V, IO=0mA SR10020, SR10070
62
88
µA
VIN=2V, IO=0mA SR10040, SR10050
97
137
µA
3.217
3.300
3.383
V
*2
V
10
V
0.9
V
Standby current
ISTB
VIN=2V, VCE=0V
1
µA
Oscillator frequency
FOSC
VIN=2V, IO=10mA SR10060
85
100
115
kHz
VIN=2V, IO=10mA SR10030
153
180
207
kHz
VIN=2V, IO=10mA SR10020, SR10070
255
300
345
kHz
VIN=2V, IO=10mA SR10040, SR10050
425
500
575
kHz
Efficiency
EFFI
CE high voltage
VCEH
CE low voltage
VCEL
PWM high voltage
VPWMH
SR10030, SR10060, SR10070 *4
PWM low voltage
VPWML
SR10030, SR10060, SR10070 *4
VDD-1.0
V
CE high current
ICEH
CE=VDD=3.3V
0.1
µA
CE low current
ICEL
CE=0V
0.1
µA
85
%
0.65
V
0.20
VDD-0.2
V
V
*2: The output setting maximum voltages are within 1/1.5 times the VDSS of the built-in MOSFET and within 1/1.5
times the VRRM of the Di as a general rule of thumb. As such, it must be verified during actual operation that they
do not exceed the rated voltages.
*3: VDD should be 1.8V or higher when VIN or other power source is supplying VDD since the output voltage and
oscillating frequency become steady when VDD is set 1.8V or higher, although the built-in IC starts step-up voltage
operation from VDD=0.8V.
*4: For models SR10030, SR10060, and SR10070, the CE pin also serves to implement a PWM/PFM external
switching function. When the voltage is VDD-0.2V or more, PWM control is exercised, and when it is VCEH or
more but VDD-1.0V or less, PWM/PFM automatic switching at a duty ratio of 25% is controlled.
Di Characteristics at Ta = 25°C, in the specified test circuit
Parameter
Symbol
Conditions
min
VF1
SR10020, SR10030
IF=1A
Reverse current 1
IR1
SR10040, SR10060
VR=30V
Forward voltage 2
VF2
SR10050, SR10070
IF=1A
Reverse current 2
IR2
Forward voltage 1
typ
max
0.43
unit
0.47
V
40
200
µA
0.30
0.35
V
600
µA
VR=6V
Pin Functions
Pin No.
Pin Name
Description
1A
GND
Ground pin for IC.
1B, 1C
TR Source
Source pin for TR
1D, 1E, 2D, 2E, 3E
TR Drain, Di Anode
Drain of TR and Anode of Diode
2A, 2B, 2C, 3A, 3B, 3C
IC VDD
Supply voltage for IC
3D
IC EXT, TR Gate
Gate for TR
4D, 4E, 5D, 5E
Di Cathode
Cathode of Diode and VOUT
5A
IC CE
Operation starts when chip enable pin is set to “high”. This pin also serves as a
5C
IC FB
4A, 4B, 4C,5B
PWM/PFM selector for models SR10030, SR10060, and SR10070.
External resistance connecting pin for output voltage setting, internal control voltage:
0.9V typical
No.0001-4/8
SR10000 Series
Equivalent Circuit and Test Peripheral Circuitry
L
VIN
FOSC
22µH
SR10000 Series
RSENSE
100mΩ
Di
IIN A
VOUT
TR
VIN
CIN
VDD
EXT
68pF
IC
10µF
CE
GND
CFB
RFB1
120kΩ
Co
FB
V
10µF
RFB2
45kΩ
VCE
Selection rules of external components
1) RFB: Set the ratio of RFB1 and RFB2 to be RFB1+RFB2≤2MΩ and VFB=0.9V.
2) CFB: Set fzfb=1/(2×π×CFB×RFB1) to be within 5kHz to 30kHz.
3) L, Co, RSENSE:
When ceramic capacitor is used for Co:
L=10µH, Co=10µF (SR10020, SR10040, SR10050, SR10070)
L=22µH, Co=10µF (SR10030, SR10060)
RSENSE=50mΩ (SR10060), 100mΩ (other than SR10060)
When tantalum capacitor is used for Co: L=10µH, Co=47µF (SR10040, SR10050)
L=22µH, Co=47µF (SR10020, SR10070)
L=47µH, Co=47µF (SR10030, SR10060)
RSENSE=None (shorted)
When electrolytic capacitor is used for Co: L=22µH, Co=100µF//2.2µF ceramic (SR10020, SR10070)
L=47µH, Co=100µF//2.2µF ceramic (SR10030, SR10060)
RSENSE=None (shorted)
These constants of the components above should be changed if necessary for larger step-up ratio VOUT/VIN
and larger output current IOUT using the expression shown below as a reference.
Co=(Standard Co*) × (IOUT (mA) / 300mA × VOUT/VIN)
* Standard Co: values shown above
No.0001-5/8
SR10000 Series
VO - IO
[Conditions]
*Ta=25°C*VIN=VCE*VDD=VOUT
*L=10µH*CIN=22µF//0.1µF
*COUT=22µF
*RFB1 : RFB2=330kΩ : 150kΩ
*CFB=22pF
V
IN =
1.5
V
2.9VOUT
3.0
2.8
V
1 .2
2.6
0.9V
0.8V
Output Voltage, VO - V
3.2
2.4
EFFI - IO
100
2.9VOUT
VIN=1.5V
80
Efficiency, EFFI - %
3.4
60
40
[Conditions]
*Ta=25°C*VIN=VCE*VDD=VOUT
*L=10µH*CIN=22µF//0.1µF
*COUT=22µF
*RFB1 : RFB2=330kΩ : 150kΩ
*CFB=22pF
20
2.2
2.0
0
0.1
0.2
0.3
0.4
0.5
0.6
Output Current, IO - A
1.6
1.5
V
0.9
1.4
0.2
0.3
0.4
0.5
0.6
Output Current, IO - A
17
16
15
14
60
40
[Conditions]
*Ta=25°C*VIN=VCE*VDD=2.9V
*L=10µH*CIN=22µF//0.1µF
*COUT=22µF
*RFB1 : RFB2=220kΩ : 330kΩ
*CFB=39pF
2 3
5 7 1.0
2 3
12
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
Output Current, IO - A
0.08
0.09
0.10
ISB00005
5 7 10
2 3
5 7 100
2 3
5 71000
ISB00004
EFFI - IO
100
15VOUT
80
60
40
[Conditions]
*Ta=25°C*VIN=VDD=2.9V
*L=10µH, CIN=10µF
*COUT=10µF
*RFB1 : RFB2=470kΩ : 30kΩ
*CFB=22pF
20
13
5 71000
ISB00002
0.9V
Output Current, IO - mA
Efficiency, EFFI - %
15VOUT
2 3
VIN=1.5V
ISB00003
[Conditions]
*Ta=25°C*VIN=VDD=2.9V
*L=10µH*CIN=10µF
*COUT=10µF
*RFB1 : RFB2=470kΩ : 30kΩ
*CFB=22pF
5 7 100
1.2V
0
0.1
0.7
VO - IO
18
2 3
1.5VOUT
80
1.2
0.1
5 7 10
EFFI - IO
20
0
2 3
100
1.3
Output Voltage, VO - V
5 7 1.0
Output Current, IO - mA
Efficiency, EFFI - %
[Conditions]
*Ta=25°C*VIN=VCE*VDD=2.9V
*L=10µH*CIN=22µF//0.1µF
*COUT=22µF
*RFB1 : RFB2=220kΩ : 330kΩ
*CFB=39pF
VIN
=1.5
V
1.2
V
1.5VOUT
2 3
ISB00001
VO - IO
1.7
Output Voltage, VO - V
0
0.1
0.7
0.9V
1.2V
0
0.1
2 3
5 7 1.0
2 3
5 7 10
2 3
5 7 100
Output Current, IO - mA
2 3
5 71000
ISB00006
No.0001-6/8
SR10000 Series
VO - IO
[Conditions]
*Ta=25°C*VDD=VOUT*L=10µH
*CIN=22µF//0.1µF*COUT=10µF
*RFB1 : RFB2=330kΩ : 150kΩ
*CFB=22pF
2.9VOUT
3.0
2.8
VIN
=1.5
V
2.6
V
1.2
0.9V
Output Voltage, VO - V
3.2
2.4
EFFI - IO
100
2.9VOUT
VIN=1.5V
80
Efficiency, EFFI - %
3.4
0.9V
1.2V
60
40
[Conditions]
*Ta=25°C*VDD=VOUT*L=10µH
*CIN=22µF//0.1µF*COUT=10µF
*RFB1 : RFB2=330kΩ : 150kΩ
*CFB=22pF
20
2.2
2.0
0
0.1
0.2
0.3
0.4
0.5
0.6
Output Current, IO - A
VIN
=1.5
V
1.5
1.2
V
0.9V
1.4
2 3
0.3
0.4
0.5
Output Current, IO - A
0.6
0.7
0.9V
60
40
[Conditions]
Ta=25°C*VDD=2.9V*L=10µH
*CIN=22µF//0.1µF*COUT=10µF
*RFB1 : RFB2=220kΩ : 330kΩ
*CFB=39pF
2 3
5 7 1.0
2 3
[Conditions]
*Ta=25°C*VIN=12V*VDD=VOUT
*L=10µH*CIN=22µF//0.1µF
*COUT=22µF
*RFB1 : RFB2=330kΩ : 150kΩ
*CFB=22pF*IOUT=50mA
2.6
2.5
-40
-20
0
20
40
60
Ambient Temperature, Ta -°C
80
100
ISB00011
Operation Hold Voltage, VHLD - V
Output Voltage, VO - V
2.7
2 3
5 7 100
2 3
5 71000
ISB00010
VO - VHLD
1.0
2.8
5 7 10
Output Current, IO - mA
[Conditions]
*Ta=25°C*VDD=VOUT*L=10µH
*CIN=22µF//0.1µF*COUT=22µF
*RFB1 : RFB2=330kΩ : 150kΩ
*CFB=22pF
2.9VOUT
2.9
5 71000
ISB00008
VIN=1.5V
ISB00009
VO - Ta
3.0
2 3
1.2V
0
0.1
1.2
0.2
5 7 100
1.5VOUT
20
0.1
2 3
EFFI - IO
80
1.3
0
5 7 10
Output Current, IO - mA
Efficiency, EFFI - %
1.6
5 7 1.0
100
[Conditions]
Ta=25°C*VDD=2.9V*L=10µH
*CIN=22µF//0.1µF*COUT=10µF
*RFB1 : RFB2=220kΩ : 330kΩ
*CFB=39pF
1.5VOUT
2 3
ISB00007
VO - IO
1.7
Output Voltage, VO - V
0
0.1
0.7
0.8
0.6
0.4
0.2
0
-40
-20
0
20
40
60
Ambient Temperature, Ta -°C
80
100
ISB00012
No.0001-7/8
SR10000 Series
<Manufactured by>
ISB Business Unit, Electronic Device Company,
Component & Device Group, SANYO Electric Co., Ltd.
Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the
performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted
in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any
and all semiconductor products fail with some probability. It is possible that these probabilistic failures
could give rise to accidents or events that could endanger human lives, that could give rise to smoke or
fire, or that could cause damage to other property. When designing equipment, adopt safety measures
so that these kinds of accidents or events cannot occur. Such measures include but are not limited to
protective circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO Semiconductor products (including technical data,services) described
or contained herein are controlled under any of applicable local export control laws and regulations, such
products must not be exported without obtaining the export license from the authorities concerned in
accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO Semiconductor product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not
guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and
reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual
property rights or other rights of third parties.
This catalog provides information as of April, 2006. Specifications and information herein are subject
to change without notice.
PS No.0001-8/8