SS0503EC Ordering number : ENA0510 SANYO Semiconductors DATA SHEET SS0503EC Low VF Schottky Barrier Diode 30V, 0.5A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • Low switching noise. Low leakage current and high reliability due to highly reliable planar structure. Ultraminiature (1008 size) and thin (0.6mm) leadless package. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Symbol Conditions Ratings Unit VRRM VRSM 30 V 30 V Average Output Current IO 0.5 A Surge Forward Current IFSM 5 A Nonrepetitive Peak Reverse Surge Voltage 50Hz sine wave, 1 cycle Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Reverse Voltage Forward Voltage Symbol Conditions Unit max IR=0.2mA IF=0.1A 0.31 0.36 VF2 0.51 0.56 V 100 µA Interterminal Capacitance C Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Therrmal Resistance typ VR VF1 IF=0.5A VR=15V VR=10V, f=1MHz Reverse Current Ratings min IR Rth(j-a) Mounted in Cu-foiled area of 0.72mm2✕0.03mm on glass epoxy board 30 V 6 V pF 10 70 ns °C / W Marking : DB Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N1506SB TI IM TC-00000269 No. A0510-1/3 SS0503EC Package Dimensions Electrical Connection unit : mm (typ) 7035-002 Cathode Mark (On the top) Top View 0.8 Polarity Discriminating Mark Anode 2 Cathode 1.0 *Electorodes : on the bottom Top view Cathode Mark (Top) 0.6 1 Anode Cathode 0.3 0.7 0.6 1 1 : Anode 2 : Cathode 2 SANYO : ECSP1008-2 Bottom View trr Test Circuit 100Ω 10Ω 1mA 10mA 50Ω 10mA Duty≤10% 10µs --5V trr IF -- VF IR -- VR 10000 1.0 7 5 Ta=125°C 100°C 10 0.1 7 5 3 2 --25°C 0.01 7 5 3 2 0°C 25 °C 5 0°C 0° C 75 °C 3 2 Reverse Current, IR -- µA 1000 Ta= 125 °C Forward Current, IF -- A 3 2 75°C 50°C 100 25°C 10 0°C 1.0 --25°C 0.1 0.001 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 Forward Voltage, VF -- V 0.8 0.9 1.0 IT11460 0 5 10 15 20 25 Reverse Voltage, VR -- V 30 35 IT11461 No. A0510-2/3 PF(AV) -- IO 0.45 Rectangular wave 0.40 (1) Average Reverse Power Dissipation, PR(AV) -- W Average Forward Power Dissipation, PF(AV) -- W SS0503EC 7.0E--04 (2) (4) (3) 6.0E--04 θ 0.35 360° 0.30 5.0E--04 Sine wave PR(AV) -- VRM (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular wave 180° 0.20 360° 360° Sine wave VR 2.0E--04 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.10 0.05 0 0 0.2 0.1 0.3 0.4 0.5 Average Output Current, IO -- A 180° (4) 360° 1.0E--04 0.0E+00 0.6 0 5 10 15 20 25 30 Peak Reverse Voltage, VRM -- V IT11462 Tc -- IO 140 (3) θ 3.0E--04 0.15 (2) VR 4.0E--04 0.25 (1) 35 IT11463 C -- VR 100 7 100 80 60 Interterminal Capacitance, C -- pF Case Temperature, Tc -- °C 120 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° Rectangular *When mounted wave in reliability operaion board, Rth(J-a)=70°C/W 40 20 θ 360° Sine wave 180° 0 0 0.1 (1) 360° 0.2 0.3 (2) (4) 0.4 Average Output Current, IO -- A 0.5 (3) 0.6 IT11464 5 3 2 10 7 5 3 2 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 IT11465 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0510-3/3