SS20015M Ordering number : ENA0197 SANYO Semiconductors DATA SHEET SS20015M Low VF Schottky Barrier Diode 15V, 2.0A Rectifier Applications • High frequency rectification (switching regulators, converters, choppers). Features • • • Small switching noise. Low forward voltage (IF=2A, VF max=0.43V). Ultrasmall package permitting applied sets to be small and slim (mounting height 0.85mm). Specifications Absolute Maximum Ratings at Ta=25°C Parameter Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Symbol Conditions Ratings VRRM VRSM Average Output Current IO Surge Forward Current IFSM Unit 15 V 15 V Mounted on a ceramic board (500mm2✕0.8mm) 2.0 A 50Hz sine wave, 1 cycle 10 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Symbol Reverse Voltage VR Forward Voltage VF Reverse Current IR Interterminal Capacitance C Reverse Recovery Time trr Thermal Resistance Rth(j-a) Ratings Conditions min IR=3mA IF=2.0A typ Unit max 15 V VR=6V VR=10V, f=1MHz IF=IR=100mA, See specified Test Circuit. 27 Mounted on a ceramic board (500mm2✕0.8mm) 70 0.44 V 325 µA pF 10 ns °C / W Marking : SP Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 72606 / 33006SB MS IM TB-00002128 No. A0197-1/3 SS20015M Package Dimensions unit : mm 7019A-001 Electrical Connection 3 0.15 1 : Anode 2 : No Contact 3 : Cathode 0.25 2.0 0 to 0.02 1.6 2.1 3 Top view 2 1 0.25 1 2 0.65 0.85 0.3 0.07 1 : Anode 2 : No Contact 3 : Cathode SANYO : MCPH3 trr Test Circuit 50Ω 100Ω 10Ω 10µs 10mA 100mA 100mA Duty≤10% --5V trr IF -- VF 10 7 5 Ta=125°C Reverse Current, IR -- µA 2 1.0 7 5 3 2 25° 100 C °C 75° C 50° C 25° C 0°C --25° C 0.1 7 5 Ta= 1 Forward Current, IF -- A 100°C 10000 3 3 2 0.01 75°C 1000 50°C 100 25°C 10 0°C 1.0 --25°C 0.1 0.1 0.2 0.3 0.4 0.5 Forward Voltage, VF -- V Rectangular wave (1) 4 (2) (4) (3) Rectangular wave 0.0010 0.6 10 12 14 16 IT10274 PR(AV) -- VR 0.0012 Sine wave 8 (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.0014 θ 360° 6 Reverse Voltage, VR -- V 0.0016 1.0 0.8 2 IT10273 PF(AV) -- IO 1.2 0 0.6 Average Reverse Power Dissipation, PR(AV) -- W 0 Average Forward Power Dissipation, PF(AV) -- W IR -- VR 100000 (1) (2) 360° θ (3) VR 0.0008 180° 360° Sine wave 180° 360° 0.0006 0.4 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ =180° 0.2 0 0 0.5 1.0 1.5 2.0 Average Output Current, IO -- A VR (4) 0.0004 0.0002 2.5 IT10435 0 0 2 4 6 8 10 12 Peak Reverse Voltage, VR -- V 14 16 IT10436 No. A0197-2/3 SS20015M Tc -- IO 140 Case Temperature, Tc -- °C Interterminal Capacitance, C -- pF (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 120 100 80 *Mounted on a ceramic board (500mm2✕0.8mm), Rth(j-a)=68°C/W 60 (4) Rectangular wave θ 40 20 360° Sine wave (1) (2) C -- VR 5 (3) 3 2 100 7 5 3 2 180° 360° 0 0 0.5 1.0 1.5 2.0 Average Output Current, IO -- A IT10437 IFSM -- t 14 Surge Forward Current, IFSM(Peak) -- A 2.5 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 IT10275 Current waveform 50Hz sine wave 12 IS 20ms t 10 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00435 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2006. Specifications and information herein are subject to change without notice. PS No. A0197-3/3