VEC2812 Ordering number : ENA0392 SANYO Semiconductors DATA SHEET VEC2812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage VDSS VGSS ID Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation IDP PD 20 PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2✕0.8mm) 1unit V ±10 V 1.5 A 6 A 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current VRRM VRSM IO IFSM 50Hz sine wave, 1 cycle 30 V 35 V 1 A 10 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : BZ Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0806PE SY IM TC-00000280 No. A0392-1/6 VEC2812 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V VDS=20V, VGS=0V 20 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGSS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 yfs RDS(on)1 VDS=10V, ID=1A 1.7 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 V 1 µA ±10 µA 1.3 V 2.8 S ID=1A, VGS=4V ID=0.5A, VGS=2.5V 160 210 mΩ 220 290 mΩ 310 435 mΩ Input Capacitance Ciss ID=0.1A, VGS=1.8V VDS=10V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance 100 pF VDS=10V, f=1MHz 22 pF Crss VDS=10V, f=1MHz 15 pF Turn-ON Delay Time td(on) See specified Test Circuit. 5.5 ns Rise Time tr td(off) See specified Test Circuit. 18 ns See specified Test Circuit. 17 ns Turn-OFF Delay Time Fall Time tf Qg Total Gate Charge 8 ns VDS=10V, VGS=10V, ID=1.5A See specified Test Circuit. 4.5 nC nC Gate-to-Source Charge Qgs Qgd VDS=10V, VGS=10V, ID=1.5A VDS=10V, VGS=10V, ID=1.5A 0.4 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=1.5A, VGS=0V 0.9 1.2 V VR VF 1 IR=500µA IF=500mA 0.35 0.39 V VF 2 0.45 V 360 µA Interterminal Capacitance IF=1A VR=15V VR=10V, f=1MHz 0.4 IR C Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 0.4 nC [SBD] Reverse Voltage Forward Voltage Reverse Current Package Dimensions 30 V 27 pF 10 ns Electrical Connection 0.3 8 7 8 7 6 5 1 2 3 4 0.15 6 5 2.3 2 3 4 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode 0.65 2.9 0.75 1 0.07 0.25 2.8 0.25 unit : mm (typ) 7012-004 Top view 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 No. A0392-2/6 VEC2812 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=10V Duty≤10% 100mA ID=1A RL=10Ω VOUT D 50Ω 100Ω 10Ω 100mA VIN 10µs PW=10µs D.C.≤1% 10mA VIN 4V 0V --5V G trr VEC2812 50Ω S 1.2 1.0 0.6 VGS=1.0V -25 °C 25°C 0.8 0.4 0.4 1.0 1.2 0.2 0 75 °C 1.4 5°C V 1.5 °C Ta= 1.6 Drain Current, ID -- A 4.0V --25 °C V 2.5 3.0V 1.8 V 6.0V [MOSFET] VDS=10V 10.0 V Drain Current, ID -- A 0.8 ID -- VGS 2.0 8 1. 1.6 1.2 [MOSFET] 25 ID -- VDS 2.0 Ta= 7 P.G 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 0 1.0 0.4 0.6 0.8 1.4 1.6 Gate-to-Source Voltage, VGS -- V RDS(on) -- VGS 400 0.2 IT02901 1.8 2.0 IT02902 RDS(on) -- Ta 400 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 350 300 1.0A 250 ID=0.5A 200 150 100 50 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 IT02985 350 300 V , 0.5A I D= 250 =2.5 VGS =4.0V , VGS 200 .0A I D=1 150 100 50 0 --60 --40 --20 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 160 IT11826 No. A0392-3/6 C 25° 1.0 7 5 C 5° = Ta 3 2 --2 °C 75 0.1 7 5 3 2 2 3 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A 0.1 7 5 1000 0.4 0.5 0.6 td(off) 2 tf 10 7 td(on) 5 3 0.9 1.0 1.1 1.2 f=1MHz 3 2 Ciss 100 7 5 3 Coss 2 2 Crss 10 2 3 5 7 2 1.0 3 Drain Current, ID -- A 5 0 [MOSFET] 10 7 5 VDS=10V ID=1.5A Drain Current, ID -- A 3 2 0 1 2 3 4 5 Total Gate Charge, Qg -- nC IT07692 PD -- Ta 1.0 14 16 18 20 ≤10µs IDP=6A 10 ID=1.5A m s 1.0 7 5 D C op er 3 2 0.1 7 5 3 2 1 12 s 4 10 s 5 8 0m 6 6 10 7 4 Drain-to-Source Voltage, VDS -- V IT02908 ASO [MOSFET] 1m 3 2 8 0 2 IT02907 VGS -- Qg 10 9 0.8 5 3 1.0 0.1 0.7 7 Ciss, Coss, Crss -- pF 5 0.3 IT02906 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] [MOSFET] tr Switching Time, SW Time -- ns 3 2 0.01 0.2 5 VDD=10V VGS=4V 7 Gate-to-Source Voltage, VGS -- V 1.0 7 5 IT02905 SW Time -- ID 100 Allowable Power Dissipation, PD -- W 3 2 3 2 0.01 0.001 [MOSFET] VGS=0V °C C --25 °C 3 2 IS -- VSD 10 7 5 VDS=10V 25° [MOSFET] Ta= 75 yfs -- ID 10 7 5 Source Current, IS -- A Forward Transfer Admittance, yfs -- S VEC2812 at io n Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT09925 [MOSFET] M 0.8 ou nt 0.6 ed on ac er am ic bo ar 0.4 d( 90 0m m2 ✕0 .8m 0.2 m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09926 No. A0392-4/6 VEC2812 IF -- VF 25 5°C 10 °C Ta =-25 °C 0° 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.3 0.4 Average Forward Power Dissipation, PF(AV) -- W 0.6 0.5 (1) 75°C 50°C 25°C 100 7 5 3 2 --25°C 10 7 5 3 2 1.0 0 [SBD] Rectangular wave θ 360° Sine wave 0.1 30 40 IT07945 Tc -- IO [SBD] (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 140 120 0.4 0.2 20 10 Reverse Voltage, VR -- V (2) (4) (3) 0.3 100°C IT07944 PF(AV) -- IO (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° [SBD] °C Ta=125 1000 7 5 3 2 0.5 Forward Voltage, VF -- V Case Temperature, Tc -- °C 0.2 0.1 0 IR -- VR 3 2 Reverse Current, IR -- µA C 75 °C 50 °C 1.0 7 5 3 2 [SBD] 10000 7 5 3 2 12 Forward Current, IF -- A 10 7 5 3 2 100 80 60 40 (1) (2) (4) (3) 20 180° 360° 1.0 0 0 0.2 0.4 0.6 0.8 Average Output Current, IO -- A IT08214 C -- VR 3 0 1.2 0 0.2 0.4 0.6 0.8 Average Output Current, IO -- A 1.0 1.2 IT08216 [SBD] f=1MHz Interterminal Capacitance, C -- pF 2 100 7 5 3 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 7 100 IT07948 No. A0392-5/6 VEC2812 Note on usage : Since the VEC2812 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0392-6/6