VEC2814 Ordering number : ENA0390A SANYO Semiconductors DATA SHEET VEC2814 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC / DC converter. Composite type with an N-channel sillicon MOSFET and a schottky barrier diode contained in one package facilitating high-density mounting. [MOSFET] • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS 20 ID V ±10 V 3 A Drain Current (Pulse) IDP PW≤10µs, duty cycle≤1% 12 A Allowable Power Dissipation PD Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.8 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C VRRM VRSM 30 V 35 V Average Output Current IO 1 A Surge Forward Current IFSM [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage 10 A Junction Temperature Tj 50Hz sine wave, 1 cycle --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : CC Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N0106 SY IM TC-00000301 / 71206 / 42506PE MS IM TB-00002243 No. A0390-1/6 VEC2814 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V VDS=20V, VGS=0V 20 Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS VGS(off) VGSS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 yfs RDS(on)1 VDS=10V, ID=1.4A 3.4 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance RDS(on)2 RDS(on)3 ID=1.5A, VGS=4V ID=0.7A, VGS=2.5V Input Capacitance Ciss ID=0.3A, VGS=1.8V VDS=10V, f=1MHz Output Capacitance Coss Reverse Transfer Capacitance V 1 µA ±10 µA 1.3 V 66 mΩ 61 85 mΩ 75 113 mΩ 5.6 51 S 280 pF VDS=10V, f=1MHz 60 pF Crss VDS=10V, f=1MHz 38 pF Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns Rise Time tr td(off) See specified Test Circuit. 35 ns See specified Test Circuit. 35 ns tf Qg See specified Test Circuit. 25 ns VDS=4V, VGS=4V, ID=3A 8.8 nC nC Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Qgs Qgd VDS=4V, VGS=4V, ID=3A VDS=4V, VGS=4V, ID=3A 0.85 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=3A, VGS=0V 0.82 1.2 V VR VF 1 IR=0.5mA IF=0.5A 0.35 0.39 V VF 2 0.45 V 360 µA Interterminal Capacitance IF=1A VR=15V VR=10V, f=1MHz 0.4 IR C Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 0.85 nC [SBD] Reverse Voltage Forward Voltage Reverse Current 0.3 8 7 2 3 pF 10 ns Electrical Connection 8 7 6 5 1 2 3 4 0.15 6 5 4 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode 0.65 0.75 2.9 0.07 1 V 27 2.3 0.25 2.8 0.25 Package Dimensions unit : mm (typ) 7012-004 30 Top view 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 No. A0390-2/6 VEC2814 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=10V Duty≤10% D 100mA 50Ω VOUT 100Ω 10Ω 100mA ID=1A RL=10Ω VIN 10µs PW=10µs D.C.≤1% 10mA VIN 4V 0V --5V G trr VEC2814 50Ω S 2 5° C Drain Current, ID -- A 1 [MOSFET] VDS=10V V V ID -- VGS 3 1.5 1.8 2.5V 5.0V 4 .0V 2 7.0V Drain Current, ID -- A [MOSFET] 1 --25 °C VGS=1.0V 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 Drain-to-Source Voltage, VDS -- V IT10933 RDS(on) -- VGS [MOSFET] 150 100 0.7A ID=0.3A 1.5A 50 0 0 2 4 6 8 Gate-to-Source Voltage, VGS -- V 10 IT10935 0.2 0.4 0.6 1.0 1.2 1.4 1.6 8V =1. V GS 100 V 2.5 A, 0.3 S= VG , I D= A 0.7 I D= V =4.0 , VGS A 5 . I D=1 50 0 --100 0.8 Gate-to-Source Voltage, VGS -- V IT10934 RDS(on) -- Ta [MOSFET] 150 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 25 ° C ID -- VDS 3 Ta= 7 P.G --50 0 50 100 150 Ambient Temperature, Ta -- °C 200 IT10936 No. A0390-3/6 VEC2814 2 10 5°C --2 7 5 Ta= 3 C 25° °C 75 2 1.0 7 5 2 2 5 7 0.1 3 2 5 7 1.0 3 2 5 7 3 Drain Current, ID -- A 0 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT10938 Ciss, Coss, Crss -- VDS [MOSFET] 1000 f=1MHz 7 5 100 7 tr td(off) 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 0.1 7 5 3 2 10 [MOSFET] VDD=10V VGS=4V 2 tf 3 2 td(on) 10 7 5 Ciss 3 2 100 7 Coss 5 Crss 3 3 2 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 7 VGS -- Qg 4.0 0 10 IT03496 Drain Current, ID -- A [MOSFET] 3 2 VDS=10V ID=3A 3.5 10 7 5 3.0 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 1.0 7 5 3 2 IT10937 SW Time -- ID 3 2.5 2.0 1.5 1.0 3 2 0 1 2 3 4 5 6 7 8 9 Total Gate Charge, Qg -- nC IT03498 PD -- Ta 1.0 10 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V IT03497 [MOSFET] ASO IDP=12A PW≤10µs 10 1m 0µs s 10 m s ID=3A DC 1.0 7 5 3 2 10 0m op s er ati on Operation in this area is limited by RDS(on). 0.1 7 5 3 2 0.5 0 Allowable Power Dissipation, PD -- W [MOSFET] VGS=0V 0.01 7 5 3 2 0.001 3 0.1 0.01 IS -- VSD 10 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, yfs -- S [MOSFET] VDS=10V Ta= 75° C 25° C --25 °C yfs -- ID 3 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 IT10952 [MOSFET] M 0.8 ou nt 0.6 ed on ac er am ic bo ar d( 90 0.4 0m m2 ✕0 .8m 0.2 m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT10953 No. A0390-4/6 VEC2814 IF -- VF 5°C 10 25 °C Ta =-25 °C 0° 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.3 0.4 Average Forward Power Dissipation, PF(AV) -- W 0.6 0.5 (1) 75°C 50°C 25°C 100 7 5 3 2 --25°C 10 7 5 3 2 1.0 0 [SBD] Rectangular wave θ 360° Sine wave 0.1 30 40 IT07945 Tc -- IO [SBD] (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 140 120 0.4 0.2 20 10 Reverse Voltage, VR -- V (2) (4) (3) 0.3 100°C IT07944 PF(AV) -- IO (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° [SBD] °C Ta=125 1000 7 5 3 2 0.5 Forward Voltage, VF -- V Case Temperature, Tc -- °C 0.2 0.1 0 IR -- VR 3 2 Reverse Current, IR -- µA C 75 °C 50 °C 1.0 7 5 3 2 [SBD] 10000 7 5 3 2 12 Forward Current, IF -- A 10 7 5 3 2 100 80 60 40 (1) (2) (4) (3) 20 180° 360° 1.0 0 0 0.2 0.4 0.6 0.8 Average Output Current, IO -- A IT08214 C -- VR 3 0 1.2 0 0.2 0.4 0.6 0.8 Average Output Current, IO -- A 1.0 1.2 IT08216 [SBD] f=1MHz Interterminal Capacitance, C -- pF 2 100 7 5 3 2 10 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 7 100 IT07948 No. A0390-5/6 VEC2814 Note on usage : Since the VEC2814 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No. A0390-6/6