VEC2815 Ordering number : ENA0559 SANYO Semiconductors DATA SHEET VEC2815 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • • DC/DC converter. Composite type with a P-Channel Sillicon MOSFET and a Schottky Barrier Diode contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 4V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS --30 ID Drain Current (Pulse) Allowable Power Dissipation IDP PD V ±20 V --3 A PW≤10µs, duty cycle≤1% --12 A Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C [SBD] Repetitive Peak Reverse Voltage Nonrepetitive Peak Reverse Surge Voltage Average Output Current Surge Forward Current VRRM VRSM IO IFSM 50Hz sine wave, 1 cycle 30 V 30 V 3 A 20 A Junction Temperature Tj --55 to +125 °C Storage Temperature Tstg --55 to +125 °C Marking : CL Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before using any SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN N2906PE TI IM TC-00000344 No.A0559-1/6 VEC2815 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current V(BR)DSS IDSS ID=--1mA, VGS=0V VDS=--30V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA --1.0 yfs RDS(on)1 VDS=--10V, ID=--1.5A 2.0 Cutoff Voltage Forward Transfer Admittance --30 V --1 µA ±10 µA --2.4 V 3.4 S 65 86 mΩ RDS(on)2 Ciss ID=--1.5A, VGS=--10V ID=--0.7A, VGS=--4V 117 168 mΩ VDS=--10V, f=1MHz 510 Output Capacitance Coss VDS=--10V, f=1MHz 115 pF Reverse Transfer Capacitance Crss VDS=--10V, f=1MHz 78 pF Turn-ON Delay Time td(on) See specified Test Circuit. 11 ns Rise Time tr td(off) See specified Test Circuit. 17 ns See specified Test Circuit. 53 ns tf Qg See specified Test Circuit. 35 ns VDS=--10V, VGS=--10V, ID=--3A 11 nC Gate-to-Source Charge Qgs nC Qgd VDS=--10V, VGS=--10V, ID=--3A VDS=--10V, VGS=--10V, ID=--3A 2.4 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=--3A, VGS=0V Static Drain-to-Source On-State Resistance Input Capacitance Turn-OFF Delay Time Fall Time Total Gate Charge pF 1.7 nC --0.87 --1.2 V 0.37 0.42 V 1.4 mA [SBD] Reverse Voltage VR Forward Voltage VF Reverse Current Interterminal Capacitance IR C VR=10V, f=1MHz Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. Package Dimensions 0.25 90 2 3 pF 20 8 7 6 5 1 2 3 4 0.15 6 5 4 0.65 ns 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode Top view 0.75 2.9 0.07 1 V VR=15V 2.3 0.25 2.8 0.3 7 30 Electrical Connection unit : mm (typ) 7012-004 8 IR=2mA IF=3A 1 : Anode 2 : No Contact 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Cathode 8 : Cathode SANYO : VEC8 No.A0559-2/6 VEC2815 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] Duty≤10% VDD= --15V 100mA ID= --1.5A RL=10Ω 50Ω VOUT D 100Ω 10Ω 100mA VIN 10µs PW=10µs D.C.≤1% 10mA VIN 0V --10V --5V G trr VEC2815 P.G 50Ω S ID -- VDS --5 --4 . --5. 0 --1.5 --1.0 --3 --2 --25° C VGS= --2.5V V --2.0 Ta= 7 --1 25 --0.5 °C Drain Current, ID -- A V --8. 0 --2.5 5°C V --4 --6. 0 --3.0 [MOSFET] VDS= --10V --10 Drain Current, ID -- A --3.5 ID -- VGS [MOSFET] 0V V --4.0 0 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 Drain-to-Source Voltage, VDS -- V IT07767 [MOSFET] RDS(on) -- VGS 220 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 Gate-to-Source Voltage, VGS -- V IT07768 [MOSFET] RDS(on) -- Ta 220 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Ta=25°C 200 180 160 ID= --1.5A 140 --0.7A 120 100 80 60 40 0 --2 --4 --6 --8 Gate-to-Source Voltage, VGS -- V --10 --12 IT07769 200 180 160 --4V S= VG 7A, --0. = ID 140 120 100 V --10 S= , VG 1.5A I D= -- 80 60 40 20 --75 --50 --25 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT09169 No.A0559-3/6 VEC2815 yfs -- ID Ta= 2 °C --25 C 75° C 25° 1.0 5 2 5 3 7 2 --1.0 5 3 --0.1 7 5 3 2 7 --0.001 --0.3 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V Ciss, Coss, Crss -- VDS [MOSFET] 1000 VDD= --15V VGS= --10V 100 --0.4 IT07771 SW Time -- ID 2 --1.1 IT07772 [MOSFET] f=1MHz 7 td(off) 7 Ciss, Coss, Crss -- pF 5 tf 3 2 td(on) 10 tr 7 Ciss 5 5 3 2 Coss 100 Crss 7 5 3 2 3 2 1.0 --0.1 2 3 5 7 2 --1.0 3 5 Drain Current, ID -- A 7 0 [MOSFET] 3 2 VDS= --10V ID= --3A --9 --10 7 5 Drain Current, ID -- A --8 --7 --6 --5 --4 --3 3 2 --1 3 2 2 4 6 8 10 Total Gate Charge, Qg -- nC PD -- Ta 1.0 0.9 M ou nt ed 0.8 0.6 on ac er am ic bo ar d 0.4 0.2 12 14 IT07775 --15 --20 --25 IDP= --12A --30 PW≤10µs 1m s ID= --3A 10 m s 10 DC 0m s op er 3 2 --0.1 7 5 0 --10 Drain-to-Source Voltage, VDS -- V IT07774 ASO [MOSFET] --1.0 7 5 --2 0 --5 IT07773 VGS -- Qg --10 Gate-to-Source Voltage, VGS -- V --1.0 7 5 3 2 --0.01 7 5 3 2 7 Drain Current, ID -- A Allowable Power Dissipation, PD -- W [MOSFET] VGS=0V Ta= 75° C 25° C --25 °C 5 3 --0.1 Switching Time, SW Time -- ns --10 7 5 3 2 7 3 IS -- VSD [MOSFET] VDS= --10V Source Current, IS -- A Forward Transfer Admittance, yfs -- S 10 ati on Operation in this area is limited by RDS(on). Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT09302 [MOSFET] (9 00 m m2 ✕ 0. 8m m )1 un it 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT09303 No.A0559-4/6 VEC2815 IF -- VF Reverse Current, IR -- µA 3 2 0.1 7 5 --25 °C 10 0° C 1.0 7 5 3 2 Ta=125°C 100°C 10k 75°C 50°C 1k 25°C 100 0°C 10 --25°C 0.1 0.2 0.3 0.4 0.5 Forward Voltage, VF -- V 0.6 PF(AV) -- IO 1.8 Rectangular wave 1.6 (1) (2) (4) (3) θ 1.4 360° 1.2 Sine wave 1.0 180° 0.8 360° 0.6 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.4 0.2 0 0 0.5 1.0 1.5 2.0 0 2.5 3.0 Average Output Current, IO -- A 3.5 Rectangular wave θ 40 360° 20 Sine wave (2) (4) (1) (3) 180° 360° 0 0 35 IT09873 0.014 0.012 0.010 (1) (2) 360° θ Rectangular wave V R (3) 0.008 Sine wave 360° 180° 0.006 VR 0.004 (4) 0.002 0 0 5 10 15 20 25 30 35 IT10607 IFSM -- t Current waveform 50Hz sine wave IS 20 20ms t 16 12 8 4 0 1.0 0.5 30 Average Reverse Voltage, VR -- V Surge Forward Current, IFSM(Peak) -- A 80 *When mounted in reliability operaion board, Rth(J-a)=50°C/W 60 25 (1)Rectangular wave θ=300° (2)Rectangular wave θ=240° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 24 100 20 PR(AV) -- VR 0.016 IT09874 (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 120 15 Reverse Voltage, VR -- V Tc -- IO 140 10 5 IT09872 Average Reverse Power Dissipation, PR(AV) -- W 0.1 0 Average Forward Power Dissipation, PF(AV) -- W 100k 1.0 0.01 Case Temperature, Tc -- °C IR -- VR 1000k 3 2 Ta= 125 °C 75° C 50° C 25° C 0°C Forward Current, IF -- A 10 7 5 1.5 2.5 2.0 3.0 Average Output Current, IO -- A 3.5 IT10608 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 ID00523 C -- VR 7 Interterminal Capacitance, C -- pF 5 3 2 100 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 Reverse Voltage, VR -- V 2 3 5 IT09871 No.A0559-5/6 VEC2815 Note on usage : Since the VEC2815 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of November, 2006. Specifications and information herein are subject to change without notice. PS No.A0559-6/6