VEC2820 Ordering number : ENA0849 SANYO Semiconductors DATA SHEET VEC2820 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET and a schottky barrier diode (SS10015M) contained in one package facilitating high-density mounting. [MOSFET] • Low ON-resistance. • 1.8V drive. [SBD] • Short reverse recovery time. • Low forward voltage. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit [MOSFET] Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) VDSS VGSS 20 ID Drain Current (Pulse) Allowable Power Dissipation IDP PD V ±10 V 3 A PW≤10µs, duty cycle≤1% 12 A Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.9 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +125 °C Marking : CU Continued on next page. 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TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 60607PE TI IM TC-00000736 No. A0849-1/6 VEC2820 Continued from preceding page. Parameter Symbol Conditions Ratings Unit [SBD] Repetitive Peak Reverse Voltage VRRM 15 Nonrepetitive Peak Reverse Surge Voltage VRSM IO 15 V 1 A Average Output Current Surge Forward Current Junction Temperature IFSM Tj Storage Temperature Tstg 50Hz sine wave, 1 cycle V 10 A --55 to +125 °C --55 to +125 °C Electrical Characteristics at Ta=25°C Parameter Symbol Conditions Ratings min typ Unit max [MOSFET] Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current IDSS ID=1mA, VGS=0V VDS=20V, VGS=0V Gate-to-Source Leakage Current IGSS VGS(off) VGS=±8V, VDS=0V VDS=10V, ID=1mA 0.4 yfs RDS(on)1 VDS=10V, ID=1.5A 2.9 Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS RDS(on)2 RDS(on)3 20 V 1 µA ±10 µA 1.3 V 66 mΩ 4.8 S ID=1.5A, VGS=4V ID=1A, VGS=2.5V 51 61 85 mΩ 75 113 mΩ Input Capacitance Ciss ID=0.5A, VGS=1.8V VDS=10V, f=1MHz 280 pF Output Capacitance Coss VDS=10V, f=1MHz 60 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 38 pF Turn-ON Delay Time td(on) See specified Test Circuit. 13 ns Rise Time tr td(off) See specified Test Circuit. 35 ns See specified Test Circuit. 35 ns tf Qg See specified Test Circuit. 25 ns VDS=10V, VGS=4V, ID=3A 8.8 nC Gate-to-Source Charge Qgs nC Qgd VDS=10V, VGS=4V, ID=3A VDS=10V, VGS=4V, ID=3A 0.85 Gate-to-Drain “Miller” Charge Diode Forward Voltage VSD IS=3A, VGS=0V 0.82 1.2 V VR VF 1 IR=0.5mA IF=0.3A IF=0.5A 0.30 0.32 V 0.32 0.35 V 0.39 0.435 V 90 µA Turn-OFF Delay Time Fall Time Total Gate Charge 0.85 nC [SBD] Reverse Voltage Forward Voltage VF 2 VF 3 Reverse Current IF=1A VR=6V Interterminal Capacitance IR C VR=10V, f=1MHz, 1 cycle Reverse Recovery Time trr IF=IR=100mA, See specified Test Circuit. 15 V 20 pF 10 ns No. A0849-2/6 VEC2820 Package Dimensions Electrical Connection 0.25 unit : mm (typ) 7012-005 8 0.3 7 6 5 1 : Anode 2 : No Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode 0.15 6 5 1 0.25 2.8 2.3 8 7 2 3 4 0.65 1 0.75 2.9 2 3 4 Top view 0.07 1 : Anode 2 : No Contact 3 : Drain 4 : Drain 5 : Source 6 : Gate 7 : Cathode 8 : Cathode SANYO : VEC8 Switching Time Test Circuit trr Test Circuit [MOSFET] [SBD] VDD=10V Duty≤10% D 50Ω 100Ω 10Ω VOUT PW=10µs D.C.≤1% 10µs 10mA 100mA ID=1.5A RL=6.67Ω VIN 100mA VIN 4V 0V --5V G trr VEC2820 50Ω S ID -- VDS V [MOSFET] Drain Current, ID -- A 2 1 2 1 --25 °C VGS=1.0V 25°C V 1.5 1.8 ID -- VGS 3 VDS=10V 2.5V 5.0V 4 .0V [MOSFET] 7.0V Drain Current, ID -- A 3 Ta= 75°C P.G 0 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS -- V 0.9 1.0 IT10933 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Gate-to-Source Voltage, VGS -- V 1.6 IT10934 No. A0849-3/6 VEC2820 RDS(on) -- VGS 150 Ta=25°C 1.5A 50 4 6 8 10 10 5 Ta= 3 5°C --2 Source Current, IS -- A 7 C 25° 5°C 7 2 1.0 7 5 2 2 5 7 0.1 3 2 5 7 1.0 3 2 5 7 3 Drain Current, ID -- A 150 200 IT10936 [MOSFET] VGS=0V 1.0 7 5 3 2 0.1 7 5 3 2 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V IT10938 Ciss, Coss, Crss -- VDS [MOSFET] [MOSFET] 1000 VDD=10V VGS=4V 2 f=1MHz 7 5 100 7 tr tf td(off) 5 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 100 IS -- VSD IT10937 SW Time -- ID 3 3 2 td(on) 10 7 5 Ciss 3 2 100 7 Coss 5 Crss 3 3 2 2 1.0 0.1 10 2 3 5 7 2 1.0 3 5 Drain Current, ID -- A VGS -- Qg 4.0 7 0 10 IT03496 3.5 3 2 10 7 5 3.0 2.5 2.0 1.5 1.0 3 2 0 1 2 3 4 5 6 7 Total Gate Charge, Qg -- nC 8 9 10 IT03498 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V IT03497 [MOSFET] ASO IDP=12A PW≤10µs 10 1m 0µs s ID=3A 10 m s 10 0m DC s op er ati on 1.0 7 5 3 2 Operation in this area is limited by RDS(on). 0.1 7 5 3 2 0.5 0 2 [MOSFET] VDS=10V ID=3A Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 50 0.01 7 5 3 2 0.001 3 0.1 0.01 0 10 7 5 3 2 VDS=10V 2 --50 Ambient Temperature, Ta -- °C Gate-to-Source Voltage, VGS -- V IT10935 yfs -- ID [MOSFET] 3 Forward Transfer Admittance, yfs -- S 2 50 0 --100 0 0 5A =0. I D 8V, 1A =1. I D= V , 5 V GS =2. V GS 1.5A , I D= 4.0V = VGS 100 5°C 25° C --25 °C 1A [MOSFET] Ta= 7 100 ID=0.5A RDS(on) -- Ta [MOSFET] Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 150 Ta=25°C Single pulse Mounted on a ceramic board (900mm2✕0.8mm) 1unit 0.01 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain-to-Source Voltage, VDS -- V 2 3 5 IT12456 No. A0849-4/6 VEC2820 PD -- Ta Allowable Power Dissipation, PD -- W 1.0 0.9 [MOSFET] M ou nt 0.8 ed on ac er 0.6 am ic bo ar d (9 00 0.4 m m2 ✕ 0. 8m m 0.2 )1 un it 0 0 20 60 40 100 120 140 160 IT12457 IF -- VF [SBD] 10 7 5 3 2 Reverse Current, IR -- µA 0.1 7 5 3 2 0.01 7 5 3 2 --2 5°C 1.0 7 5 3 2 Ta=125°C 100°C 75°C 1000 50°C 100 25°C 10 1.0 --25°C 0.01 0.1 0.2 0.3 0.4 0.5 Forward Voltage, VF -- V PF(AV) -- IO 0.7 [SBD] (1) (2) (4)(3) 0.5 0.4 Rectangular wave 0.3 θ 0.2 360° Sine wave 0.1 180° 360° 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 Average Output Current, IO -- A IT07152 IFSM -- t [SBD] 12 10 15 Reverse Voltage, VR -- V IT07151 C -- VR 2 [SBD] f=1MHz (1)Rectangular wave θ=60° (2)Rectangular wave θ=120° (3)Rectangular wave θ=180° (4)Sine wave θ=180° 0.6 5 0 IT07150 Interterminal Capacitance, C -- pF 0 Average Forward Power Dissipation, PF(AV) -- W [SBD] 0.1 0.001 Surge Forward Current, IFSM(Peak) -- A IR -- VR 100000 10000 Ta =1 2 10 5°C 0° C 75 °C 50 °C 25 °C Forward Current, IF -- A 80 Ambient Temperature, Ta -- °C 100 7 5 3 2 10 0.1 2 3 5 7 1.0 2 3 Reverse Voltage, VR -- V 5 7 10 2 IT07153 Current waveform 50Hz sine wave 10 IS 20ms t 8 6 4 2 0 7 0.01 2 3 5 7 0.1 2 Time, t -- s 3 5 7 1.0 2 3 IT00626 No. A0849-5/6 VEC2820 Note on usage : Since the VEC2820 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2007. Specifications and information herein are subject to change without notice. PS No. A0849-6/6