SEMiX 453GB12T4s Absolute Maximum Ratings Symbol Conditions IGBT - () * 6 - '7) * 62: ()*4 # '(.. 89) " 9. * )() " ';). " < (. - '). * '. @ () * )B) " 9. * B.) " ';). " 8.. " 62:;+6 Trench IGBT Modules 8.. = 3 > (. = ? '(.. Inverse Diode 6A - '7) * 6A2: SEMiX 453GB12T4s Units () * 3 SEMiX®3s Values 6A2:;+6A Module SEMiX 453GAL12T4s 62: SEMiX 453GAR12T4s - C B. ,,, D '7) * Target Data C B. ,,, D '() * B... Features ! Typical Applications " # $% &# Remarks # '()* +, %# ! # -').* / ! 0 23 4 '4.54 23 4 '4.54 234+(4(5 4 24+.4)5 "4 ' , Characteristics Symbol Conditions IGBT 3 3 4 6 '9 " 6 3 . 4 . 3 ') 1 typ. max. Units ) )49 84) .4; " - () * .49 .4E - '). * .47 .49 - ()* (4( (4B 5 - ').* ;4; ;48 5 '49 ( (4( (4B - () * - ').*, ()4 3 . ' :F (74E '47 A A '4) A (8.. G3 3 C9 ,,, D') 23 - () * '47 H 23 '4E 5 #I# B... "I@ 23 '4E 5 #I# )... "I@ ;.) 9. B) );) '.. J ). J # # 2-C GAL min. 6 B). "4 3 ') - ()*, GB ()*4 # 63K 8.. 6 B)." - '). * .4.8) LI& GAR 27-09-2007 SCT © by SEMIKRON SEMiX 453GB12T4s Characteristics Symbol Conditions Inverse Diode A 6A B). "= 3 . A. A ® SEMiX 3s Trench IGBT Modules 622: G 6A B). " #I# )... "I@ 3 C') = 8.. 2-C/ ## min. typ. max. Units - () *, (4') (4B) - '). *, (4.) (4B - () * '4; '4) - '). * .4E '4' - () * '4E (4' 5 - '). * (48 (4E 5 - '). * ;). 7. " @ (9 J .4'' LI& Module M SEMiX 453GB12T4s 2NDN SEMiX 453GAL12T4s ,4 C (. () * .47 5 '() * ' 5 .4.B LI& SEMiX 453GAR12T4s 2C # Target Data : O :) ; : :8 (4) Features ! Typical Applications " # $% &# Remarks # '()* +, ) P ) P ;.. Temperature sensor 2'.. '..* 2()) O5 .4BE;<)Q O5 K'..I'() 22'..+RK'..I'()'IC'I'..S= ;)).<(Q L RLS This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. %# ! # -').* / ! 0 23 4 '4.54 23 4 '4.54 234+(4(5 4 24+.4)5 GB 2 GAL GAR 27-09-2007 SCT © by SEMIKRON SEMiX 453GB12T4s Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 27-09-2007 SCT © by SEMIKRON SEMiX 453GB12T4s Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 27-09-2007 SCT © by SEMIKRON SEMiX 453GB12T4s :T ; % 5 3K % 27-09-2007 SCT 3"M % 3"2 © by SEMIKRON