SEMiX 754GB128D Absolute Maximum Ratings Symbol Conditions IGBT / ', - 2 / 1,( - 278 ',-. !% 1'(( 34, $ 5( - 65( $ 5(( $ ;'( 1( ? ', - ,3, $ 5( - A5, $ 5(( $ A1(( $ 3(( $ 6( BBB C 1,( - 6( BBB C 1', - 6((( 278'92 SPT IGBT Modules SEMiX 754GB128D ! 3(( < : = '( < > 1'(( Units ', - : SEMiX® 4 Values / 1', - Inverse Diode 2@ / 1,( - 2@78 2@78'92@ 2@8 ! 1( < B / ', - Module 278 Preliminary Data "/ Features !" ! !# Typical Applications $ " %" & % ! '( )* Remarks + % $. 1 B Characteristics Symbol Conditions IGBT : : . 2 13 $ 2 : ( . ( : 1, ',-. !% min. typ. max. Units 6., , 3., (.3 $ / ', - 1 1.1, / 1', - (.D 1.(, / ',- '.A A E / 1',- A A.5 E 1.D '.A, / 1',-!"B '.1 '.,, 1 8* A4.4 '., @ @ 1.3 @ A5(( 15( 55 65 3,, 1'( G 66 G / ', - 2 6(( $. : 1, / ',-!"B ',. : ( F: % % : 5 BBB C1, 7: '., E 7: '., E 7/ ! 2:H 3(( 2 6(($ / 1', - (.(, IJK GB 1 20-04-2007 SCH © by SEMIKRON SEMiX 754GB128D Characteristics Symbol Conditions Inverse Diode @ 2@ 6(( $< : ( @( @ ® SEMiX 4 SPT IGBT Modules 2778 F 2@ 6(( $ %J% ,5(( $J? : 1, < 3(( 7/L ! %% min. typ. max. Units / ', -!"B ' '., / 1', -!"B 1.5 '.A / ', - 1.1 1.6, / 1', - (.5, 1.' / ', - '.A '.3 E / 1', - '.6 '.5 E / 1', - A3, ,5 $ ? '' G (.(5' IJK Module SEMiX 754GB128D Preliminary Data Features !" ! !# Typical Applications $ " %" & % ! '( )* Remarks + % M 7NCN B. ! '' ', - (.4 E 1', - 1 E (.(A IJK 7 ! % 8 ) 8, A 8 83 '., , + , + 6(( Temperature sensor 71(( 1((- 7',, )E (.6DA;,O )E H1((J1', 771((9!PH1((J1',1J1J1((Q< A,,(;'O I PIQ< H This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB 2 20-04-2007 SCH © by SEMIKRON SEMiX 754GB128D Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 3 Typ. turn-on /-off energy = f (IC) Fig. 4 Typ. turn-on /-off energy = f (RG) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 20-04-2007 SCH © by SEMIKRON SEMiX 754GB128D Fig. 7 Typ. switching times vs. IC Fig. 8 Typ. switching times vs. gate resistor RG Fig. 9 Typ. transient thermal impedance Fig. 10 Typ. CAL diode forward charact., incl. RCC'+EE' Fig. 11 Typ. CAL diode peak reverse recovery current Fig. 12 Typ. CAL diode recovery charge 4 20-04-2007 SCH © by SEMIKRON SEMiX 754GB128D 8R 6 5 :H 20-04-2007 SCH © by SEMIKRON