SK 260MB10 Absolute Maximum Ratings Symbol Conditions MOSFET /"" /2"" 4 4' - .+ ,( - .+ *1 ,5 0 8 0 5 - .+ *1 ,5 0 ; Values Units 011 3.1 .61 0*1 9:1 6:1 / / 7 7 <91===>0+1 , .61 0*1 9:1 6:1 7 7 <91===>0+1 , Inverse diode ® SEMITOP 3 Mosfet Module 4? - < 4 4?' - < 4' - .+ *1 ,5 8 0 5 - .+ *1 ,5 ; Freewheeling CAL diode 4? - < 4 - , 7 , ; SK 260MB10 Preliminary Data Features ! " Typical Applications # 1) $ $ %&" ' & ( ( *+, / ( 01 = = +1 @( A'"( 0 0 Characteristics Symbol Conditions MOSFET /2" - 1 /( 4 - 1(.+ 7 /2" - /"5 4 - 1(.+ 7 /2" - 1 /5 /" - /""5 ; - .+ 0.+ , /2" - .1/ 5/" - 1 / 4 - 611 75 /2" - 01 /5 ; - .+ , A" 4 - 611 75 /2" - 01 /5 '"?F G /2" - 1 /5 /" - .+ /5 - 0 '@ ; - 0.+ , #" G / - +1 /5 /2" - 01 /5 4 - 611 7 A2 - .+ E A;< .+11 B 6111 / C /"" .(+ typ. max. Units 011 +11 011 .(+ / / D7 7 E 9(+ E 6(6 6(+ ? , , - .+ ,( min. /A"" /2" 4"" 42"" A" < 91 === > 0.+ .:1 .H(: .(I ? ? .(* ? .(. 901 9+1 09I1 961 '"?F 1(9+ 1(.6 JBK Inverse diode /" 4? - 611 75 /2" - 1 /5 4AA' L G 4? - 611 75 $; - 0.+ ,5 A2 - *(. E /A - +1 75 B - I11 7BD ; - .+ , 1(H: / 6. 6 7 D Free-wheeling diode /? 4? - 75 /2" - / / 4AA' L G 4? - 75 $; - , 7 D / - 75 B - 7BD Mechanical data '0 M .(+ 61 "F'4 &O 6 N .9 MB 1 21-10-2004 RAM © by SEMIKRON SK 260MB10 Fig. 3 Output characteristic, tp = 80 µs, Tj = 25 °C Fig. 5 Breakdown voltage vs. temperature Fig. 6 Typ. capacitancies vs. drain-source voltage Fig. 7 Gate charge characteristic, IDp = 300 A Fig. 8 Diode forward characteristic, tp = 80 µs 2 21-10-2004 RAM © by SEMIKRON SK 260MB10 Dimensions in mm "%22F" F #F47'F FA ?A F "#FA &4N" 7N F '%N 4N2 &4N" 4N F &G . .9 ' This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 21-10-2004 RAM © by SEMIKRON