SEMIKRON SK30GAD066T

SK30GAD066T
Absolute Maximum Ratings
Symbol Conditions
IGBT
23%
4
#
4 - *7/ 0
#9:
- ./ 01 - ./ 0
IGBT Module
SK30GAD066T
566
2
,8
+
- 76 0
,*
+
56
+
< .6
2
5
@
#9:- . #
23% ? 566 2
4
- *./ 0
- ./ 0
+
- 86 0
+
Inverse Diode
#A
#A9:
4
- */6 0
#A9:- . #A
+
Freewheeling Diode
#A
Target Data
2 - ,56 2= 2;3 > .6 2=
Units
- ./ 0
2;3%
SEMITOP® 3
Values
#A9:
4
- *7/ 0
- ./ 0
5/
+
- 76 0
/*
+
.66
+
#A9: - . #A
Module
Features
!
" # $ Typical Applications
%
#&
%
'$%
Remarks
$ (
(* +
&( ,
+
#9:%
+
&4
BC6 DDD E*/6
0
BC6 DDD E*./
0
./66
2
2
+1 * D
Characteristics
Symbol Conditions
IGBT
2;3
2;3 - 231 # - 61C, +
#3%
2;3 - 6 21 23 - 23%
#;3%
23 - 6 21 2;3 - ,6 2
- ./ 01 min.
typ.
/
/18
4 - ./ 0
4
- *./ 0
4
- ./ 0
max.
51/
2
6168
+
+
,66
4 - *./ 0
236
4 - ./ 0
4
3
23
2;3 - */ 2
# - ,6 +1 2;3 - */ 2
23 - ./1 2;3 - 6 2
- */6 0
4 - ./0
+
*
618/
61F
2
*8
.8
G
.7
,8
G
2
4
- */60
4
- ./0
&D
*1C/
*18/
4 - */60
&D
*15/
.16/
2
2
A
A
- * :H
A
9; - .. G
9; - .. G
3
94B
+
61F
3
Units
#;
2 - ,662
#- ,6+
4 - */6 0
2;3-<*/2
*1.C
I
*1C8
I
*18
JKL
GAD
1
05-09-2007 DIL
© by SEMIKRON
SK30GAD066T
Characteristics
Symbol Conditions
Freewheeling Diode
2A - 23
SEMITOP® 3
IGBT Module
#A - ,6 += 2;3 - 6 2
4
- ./ 0
&D
4
- *./ 0
&D
typ.
max.
Units
*1,
*1/
2
*1.
*1C/
2
2A6
4 - *./ 0
618/
61F
2
A
4
- *./ 0
F
*5
G
4
- *./ 0
,
,
+
@
61CC
I
#99:
M
#A - ,6 +
K - B/66 [email protected]
3
2- ,662
94BA
:
N :*
SK30GAD066T
min.
.1./
*1.
JKL
.1/
O
,6
*666
*576
G
Temperature sensor
9
,P1
-
./ *660
Target Data
Features
!
" # $ This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
Typical Applications
%
#&
%
'$%
Remarks
$ (
(* +
&( ,
+
GAD
2
05-09-2007 DIL
© by SEMIKRON
SK30GAD066T
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
05-09-2007 DIL
© by SEMIKRON
SK30GAD066T
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
05-09-2007 DIL
© by SEMIKRON
SK30GAD066T
/7 % 1 $1 ( .
5
/7
;+
05-09-2007 DIL
© by SEMIKRON