SEMIKRON SK35TAA12

SK 35 TAA
)*(+
)**+, )*+
./0 12 3
)
6&&
$1&&
)
4&&
$8&&
/ 0 4& 5
(712/33&4
(712/33$8
$9&&
$%&&
(712/33$%
Characteristics
Symbol Conditions
SEMITOP®2
Two separated thyristors
Values
Units
./
/ 0 $&&5
81
3
./
/ 0 4&5
12
3
./(+:.;(+
/!< 0 82 $82 5= $& .?
/!< 0 82 $82 5= !, $& 3
/
/
SK 35 TAA
/ 0 825 , $& >2& 14&
3
$&&& 98&
3?
@>& AAA B $82
5
8%&
5
Thyristor
Target Data
Features
! " # $%&& ! !
Typical Applications
' ( !:
:
E
.
/!< 0 $82 5
/!< 0 $82 5= 0 2& AAA %& D
/!< 0 $82 5= "A
/!< 0 82 5= "A : A
$&&&
2&
$8&
4& : $2&
):C
3:C
C
3
.F
/!< 0 82 5= * 0 11 G= "A : A
$2& : 1&&
3
)/
)//
/
.= .*
*<@
/!<
) /
. /
) /!< 0 82 5= ./ 0 92 3= A
/!< 0 $82 5
/!< 0 $82 5
/!< 0 $82 5= ) 0 )*+= )* 0 )**+
A "
/!< 0 82 5= A
A
/!< 0 82 5= A
A
/!< 0 $82 5= A
A
$,6
A &,42
A 6,$
A $&
$,8
@>& AAA B$82
1
$&&
&,82
)
)
H
3
7:I
5
)
3
)
.
/!< 0 $82 5= A
A
1
3
Diode
);
)/
/
/!< 0 5= .; 0 3= A
/!< 0 5
/!< 0 5
)
)
H
.*
/!< 0 5= )* 0 )**+
3
*<@
7:I
/!<
5
Mechanical data
)
+$
3 2&D, AAA $ $
E
(K+./LM8
82&& 1&&&
8
)
J
$6
/ 4$
TAA
1
04-06-2007 DIL
© by SEMIKRON
SK 35 TAA
Fig. 1 Power dissipation vs. current
Fig. 2 Transient thermal impedance vs. time
Fig. 3 Forward chracteristic of single thyristor
Fig. 4 Surge overload current vs. time
Fig. 5 Gate trigger characteristic
2
04-06-2007 DIL
© by SEMIKRON
SK 35 TAA
Dimensions in mm
(#
K(/K FK.3+K/K* ;* /K (FK* L.J( 3J /K +#J/.J
L.J( .J /K LN 8 / 4$ ( , L, N 8
/33
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
3
04-06-2007 DIL
© by SEMIKRON