SEMIKRON SK40DH12

SK 40 DH
SEMITOP® 3
(413
(443+ (43
5 6 70 8 (
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9''
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2 6 9' :
1< 7' '9
1< 7' %0
%=''
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1< 7' %&
Symbol
Conditions
Values
Units
5
2 6 9' :
70
8
5>13 ? 5213
2"@ 6 0/ :A %' 2"@ 6 %0/ :A %' 2"@ 6 0/ :A 9+. ,,, %' .0'
09'
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8
8
8B
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C
, 9
8
B
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(22
2
2"@ 6 0/ :A =/8
2"@ 6 %0/ :A
2"@ 6 %0/ :
5A 54
2"@ 6 %0/ :A ( 6 (43A (4 6 (443
SK 40 DH
2"@ 6 :A 5! 6 8A !? 6 8?D
Preliminary Data
( 6 E (43
"? ? F
5
2"@ 6 %0/ :A ,
,
2"@ 6 %0/ :A ,
,A 6 /',,,&' *
2"@ 6 %0/ :A ,
,A #,
2"@ 6 0/ :A ,
,A #, ? ,
, %'''
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%0'
9' ? %/'
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8
5)
2"@ 6 0/ :A ,
,A 4! 6 .. C
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8
(!2
5!2
(!
2"@ 6 0/ :A ,
,
2"@ 6 0/ :A ,
,
2"@ 6 %0/ :A ,
,
, 0
, %''
, '+0/
(
8
(
5!
2"@ 6 %0/ :A ,
,
, .
8
[email protected]
H #
H 2+ %'
%+=
%+=
0&'
G7',,,J%/'
G7',,,J%0/
<?I
<?I
:
:
:
:
2"@
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:
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3 F K
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(
L
Half Controlled Bridge
Rectifier
Features
! " # $ %&''( " "
$) *+ , - &. /.0
Typical Applications
1 ) 2 3 2
2"@
2"@
2
D
D
1
?B
1-352HM
.'
.
19-09-2003 RAM
2 .;
© by SEMIKRON
SK 40 DH
Fig. 1 Power dissipation vs. output current
Fig. 2 Surge overload current vs. time
Fig. 3.1 Forward characteristics of single thyristor
Fig. 3.2 Forward characteristics of single diode
Fig. 4.1 Transient thermal impedance vs. time for single thyristor
Fig. 4.2 Transient thermal impedance vs. time for single diode
2
19-09-2003 RAM
© by SEMIKRON
SK 40 DH
Fig. 5 Gate trigger characteristics
Dimensions in mm
2.;
2.; 1 H 6 0
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
3
19-09-2003 RAM
© by SEMIKRON