SK 50 GH 065 F Absolute Maximum Ratings Symbol Conditions IGBT 12+ 1&2+ % %: $ , -. /0 Values $ , -. 64 /7 ; < 7 $ , -. 64 /7 $= Units 344 5 -4 .8 84 <46 64 1 1 9 9 > 84 ??? @ <.4 / 6- .4 <38 <44 9 9 > 84 ??? @ <.4 / Inverse / Freewheeling Diode ® SEMITOP 3 IGBT Module SK 50 GH 065 F Target Data Features ! "#$ %&$ $ '( ) * ) Typical Applications + %* + !#+ %' %': , > %: $ , -. 64 /7 ; < 7 $ , -. 64 /7 $= $ $ $0 <4 > 84 ??? @ <-. -34 / / 1 9 .4 A0 ??? < ? B < -.44 B C444 1 Characteristics Symbol Conditions IGBT 12 1&2 E=> % , 84 90 $= , -. <-. / 12 , 1&27 % , 4044<8 9 12 , -. 17 1&2 , 4 17 < :A %&$ $ , -. /0 min. 80. typ. <0D -0.0. C max. - -030. 406. 2 @ 2 Units 1 1 ' FB( FB( G 1 , C44 1 0 1&2 , 5 <. 1 % , 84 90 $= , <-. / E& , E& , <3 H % * <06 I <0< 406. C0.. 1 1 H Inverse / Freewheeling Diode 1' , 12 1$ $ %' , 34 97 $= , -. <-. / $= , <-. / $= , <-. / E=> <0< FB( %EE: J G %' , 97 1E , C44 1 %'B , 9BK 9 K 2 1&2 , 4 17 $= , <-. / I Mechanical data :< L -0C -0. C4 +2:%$#M C " $ <N GH 1 03-03-2006 DIL © by SEMIKRON SK 50 GH 065 F Fig.5 Typ. output characteristic, tp = 250 µs, 25 °C Fig.6 Typ. output characteristic, tp = 25 µs, 125 °C Fig.7 Turn-on / -off energy = f (IC) Fig.8 Turn-on / -off energy = f (RG) Fig.9 Typ. gate charge characteristic Fig.10 Typ. capacitances vs. VCE 2 03-03-2006 DIL © by SEMIKRON SK 50 GH 065 F Fig.11 Typ. switching times vs. IC 3 Fig.12 Typ. switching times vs. gate resistor RG 03-03-2006 DIL © by SEMIKRON SK 50 GH 065 F UL Recognized File no. E 63532 Dimensions in mm $<N & +!&&2+$2 )2%9:2$2E 'E $2 +)2E #%"+ 9" $2 :!"$%"& #%"+ %" $2 #G - $<N This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 03-03-2006 DIL © by SEMIKRON