SK60GB125
% , -. /) Absolute Maximum Ratings
Symbol Conditions
IGBT
(0+
%1 , -. /
&
%1 , 3-. /
&89
IGBT Module
SK60GB125
3-44
(
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5
% , 64 /
7.
5
344
5
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34
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5
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76
5
&89, - &
( , 744 (; ('0 < -4 (;
(0+ = >44 (
Units
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SEMITOP® 3
Values
Inverse Diode
&"
%1 , 3.4 /
&"89
&"89, - &"
&"+9
, 34 ; *
5
%1 , 3.4 /
..4
5
Module
&89+
Preliminary Data
5
%*1
%
Features
! " #$% &'% (
) * Typical Applications
+
&*
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(
5) 3 C
AB4 CCC D3.4
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/
-.44
(
% , -. /) Characteristics
Symbol Conditions
IGBT
min.
typ.
max.
Units
B).
.).
>).
(
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('0 , (0) & , - 5
&0+
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5
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5
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IJK
GB
1
13-02-2007 DIL
© by SEMIKRON
SK60GB125
Characteristics
Symbol Conditions
Inverse Diode
(" , (0
&" , .4 5; ('0 , 4 (
("4
min.
(
%1 , 3-. /
*C
3)6
(
(
IGBT Module
SK60GB125
Preliminary Data
Features
3
3)-
%1 , 3-. /
3>
--
%1 , 3-. /
B4
6
5
?
-
H
%1 , -. /
&889
L
&" , .4 5
J , A644 5J?
0
(, >44(
81A
9
M
Units
-
%1 , -. /
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SEMITOP 3
max.
%1 , -. /
*C
%1 , 3-. /
®
typ.
(
F
-)-.
74
F
4)E
IJK
-).
#
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
! " #$% &'% (
) * Typical Applications
+
&*
+
!$+
GB
2
13-02-2007 DIL
© by SEMIKRON
SK60GB125
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 6 Typ. gate charge characteristic
3
13-02-2007 DIL
© by SEMIKRON
SK60GB125
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 10 CAL diode forward characteristic
4
13-02-2007 DIL
© by SEMIKRON
SK60GB125
UL recognized file
no. E 63 532
%-@ + ) $) N -
% -@
5
'
13-02-2007 DIL
© by SEMIKRON