SEMIKRON SK85MH10T

SK 85 MH 10 T MOSFET,TRANSISTOR
Absolute Maximum Ratings
Symbol Conditions
MOSFET
-##
-0##
2
28
( )* +, ( )* 4/ +5 .
9 . 5 ( 4/ +5 .
:
Values
Units
.//
1 )/
4/ 6/
.)/
7
7
! ;/ <<< = .*/
+
4/ 6/
.)/
7
7
! ;/ <<< = .*/
+
Inverse diode
®
SEMITOP 2
MOSFET Module
2> ( ! 2
2>8 ( ! 28
( )* 4/ +5
9 . 5 ( 4/ +5
:
Freewheeling CAL diode
2> ( ! 2
( +
7
+
:
, ./ ! ;/ <<< = .)*
)6/
+
+
-
7, . .
)*// ? @///
-
SK 85 MH 10 T
Preliminary Data
Features
! "
# Typical Applications
$ % %
&'#
Characteristics
Symbol Conditions
MOSFET
-A##
-0#
2##
20##
A#
-0# ( / -, 2 ( *,6 7
-0# ( -#5 2 ( *,6 7
-0# ( / -5 -# ( -##5 : ( )* +
-0# ( 1 )/- 5-# ( / 2 ( 4/ 75 -0# ( ./ -5 : ( )* +
A#
2 ( 4/ 75 -0# ( ./ -5
8#>E
F
-0# ( / -5 -# ( )* -5 ( . 8H
:
( )* +, min.
typ.
.//
),*
@,@
( .)* +
max.
.//
.//
C,*
B7
7
D
[email protected],*
D
>
G,.
.,4
>
>
.,6
>
$#
F
- ( */ -5 -0# ( ./ -5
2 ( */ 7
A0 ( *6 D
A:!
Units
@//
.;/
.**/
.*/
8#>E .,.
I?J
Inverse diode
-#
2> ( */ 75 -0# ( / -5
/,G
-
2AA8
K
F
2> ( */ 75 %: ( )* +5 A0 ( *6 D
);
/,G
7
B
-A ( 6* 75 ? ( .// 7?B
C/
:
( +
Free-wheeling diode
->
2> ( 75 -0# ( -
-
2AA8
K
F
2> ( 75 %: ( +
7
B
- ( 75 ? ( 7?B
Mechanical data
8.
L
)
)/
M
MH - T
1
16-02-2007 DIL
© by SEMIKRON
SK 85 MH 10 T MOSFET,TRANSISTOR
Fig. 3 Output characteristic, tp = 80 µs, Tj = 25 °C
Fig. 4 Temperature Sensor Characteristic
Fig. 5 Breakdown voltage vs. temperature
Fig. 6 Typ. capacitancies vs. drain-source voltage
Fig. 7 Gate charge characteristic, IDp = 80 A
Fig. 8 Diode forward characteristic, tp = 80 µs
2
16-02-2007 DIL
© by SEMIKRON
SK 85 MH 10 T MOSFET,TRANSISTOR
Dimensions in mm
#&00E# E $E278E EA >A E #$EA '2M# 7M E 8&M 2M0 '2M# 2M E 'F ) 8 !
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
3
16-02-2007 DIL
© by SEMIKRON