SKET 800 THYRISTOR BRIDGE,SCR,BRIDGE ,-+. ,--. ,%-. , 1#22 , 1822 /-.+ 0 1#22 3 (4 * ) /3, 0 52# 3 ( 1526 0 5# 7&) +9 522:18; <8 1=22 1522 +9 522:15; <8 Symbol Conditions /3, 1526 0 5# (122) 7&6 , 1526 0 5# (122) 7&6 /+. *> 0 $# 7&6 12 *> 0 1"2 7&6 12 *> 0 $# 7&6 5" 12 "?222 "$222 !85#222 3 3 3@ *> 0 1"2 7&6 5" 12 #1$2222 3@ , ,()$) ,(A) ,(A)()$) ()$) *> 0 $# 7&6 / 0 "222 3 *> 0 $# 7&6 / 0 "222 3 *> 0 1"2 7& *> 0 1"2 7& *> 0 1"2 7& *> 0 1"2 7& 4 1## 18# 4 25" 4 2$# 2?5 2$$ , , , B , B /%%6 /-% *> 0 1"2 7&6 ,-% 0 ,--.6 ,%% 0 ,%-. 4 1#2 3 *> 0 $# 7&6 /; 0 1 36 ;: 0 1 3:C 1 C ,% 0 2!? D ,%-. $ C (:) (*:) E /< *> 0 1"2 7& *> 0 1"2 7& *> 0 1"2 7& *> 0 $# 7&6 : 4 4 $22 4 $222 $22 1222 : $222 3:C ,:C C 3 / *> 0 $# 7&6 -; 0 "" B6 : 4 1#22 : $#22 3 ,; /; ,;% *> 0 $# 7&6 *> 0 $# 7&6 *> 0 1"2 7&6 " "22 4 2$# , 3 , /;% *> 0 1"2 7&6 4 12 3 ( ) ( * ) + -(>F) -(>F) -(>F) -(F) *> 152 1$2 2282# 228$ 228" 221 F 82 H 1"2 9:G 9:G 9:G 9:G 7& 1) * 2) * , . . #2 <6 6 1 : 1 J 4 SEMIPACK® 6 Thyristor Modules SKET 800 Preliminary Data Features !" #"$ Typical Applications %& @ & Values Units 52# (#=# ) 3 3 F 82 H 1$# 7& 8522 : 8222 ! K 1# L 15 K 1# L # D =51 ,I M M :@ $1#2 352 SKET 1 09-10-2007 MAJ © by SEMIKRON RECTIFIER,DIODE,THYRISTOR,MODULE Fig. 1L Power dissipation per thyristor vs. on-state current Fig. 1R Power dissipation per thyristor vs. ambient temp. Fig. 5 Recovered charge vs. current decrease Fig. 6 Transient thermal impedance vs. time Fig. 7 On-state characteristics Fig. 8 Surge overload current vs. time 2 09-10-2007 MAJ © by SEMIKRON SKET 800 THYRISTOR BRIDGE,SCR,BRIDGE Fig. 9 Gate trigger characteristics Dimensions in mm & 352 This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 3 09-10-2007 MAJ © by SEMIKRON