SEMIKRON SKIIP25NAB065V10

SKiiP 25NAB065V10
Absolute Maximum Ratings
Symbol Conditions
IGBT - Inverter, Chopper
.%5
;
.%5
3 )( 41 # 3 )( 78,9 4
3 )( 78,9 41 # < + /
>
Values
Units
&,,
': 7):9
8& 7(&9
= ),
.
.
? 0, $$$ @ +(,
4
0, 7',9
:, 7&,9
? 0, $$$ @ +(,
4
:,,
0&
'8,
&:,
.
B
? 0, $$$ @ +(,
4
&,
? 0, $$$ @ +)(
4
)(,,
.
Diode - Inverter, Chopper
®
MiniSKiiP 2
A
A;
3 )( 78,9 4
3 )( 78,9 41 # < + /
>
3-phase bridge rectifier +
brake chopper + 3-phase
bridge inverter
SKiiP 25NAB065V10
Diode - Rectifier
.;
A
A5;
B
3 8, 4
# 3 +, /1 +:, 41 > 3 )( 4
# 3 +, /1 +:, 41 > 3 )( 4
>
Preliminary Data
Features
!
"! # $ %&'(')
Typical Applications
* # +, -.
!# / # 01, -2
;5
# # / 7), C #9
# < .
1 + /$
Characteristics
Symbol Conditions
IGBT - Inverter, Chopper
3 )( 41 # min.
typ.
max.
Units
) 7)1)9
0
+1) 7+1+9
)8 7'89
+1(
,1)
,1+
)1( 7)189
(
+1' 7+1)9
0, 7(,9
.
.
.
/E
A
A
A
.%
.%79
.%7D9
3 ', 1 > 3 )( 7+)(9 4
.% 3 .%1 3 ,1( /
> 3 )( 7+)(9 4
> 3 )( 7+)(9 4
.% 3 )( .1 .% 3 , .1 3 + ;"F
.% 3 )( .1 .% 3 , .1 3 + ;"F
.% 3 )( .1 .% 3 , .1 3 + ;"F
7>?9
# +1,(
GC2
79
7
9
%
. 3 ',, .1 .% 3 = +( .
3 ', 1 > 3 +)( 4
3 3 ), E
* ),
),
+:,
),
,1H
/I
,1&(
/I
'
%
Diode - Inverter, Chopper
.A 3 .%
.7D9
A 3 ', 1 > 3 )( 7+)(9 4
> 3 )( 7+)(9 4
> 3 )( 7+)(9 4
+1( 7+1(9
+ 7,1H9
+: 7),9
+1: 7+1:9
+1+ 7+9
)' 7)89
.
.
/E
7>?9
# +1(
GC2
;
J
%
A 3 ', 1 . 3 ',, .
.% 3 , .1 > 3 +)( 4
(:
'1(
,1:
K
/I
AC 3 )(,, CK
Diode - Rectifier
.A
.7D9
A 3 )( 1 > 3 )( 4
> 3 +(, 4
> 3 +(, 4
+1+
,1:
+'
.
.
/E
7>?9
# +1)(
GC2
+,,,7+&8,9
E
Temperature Sensor
' L1 3 )( 7+,,9 4
Mechanical Data
NAB
1
;
&(
; M
19-10-2004 SEN
)
)1(
/
© by SEMIKRON
SKiiP 25NAB065V10
Fig. 1 Typ. output characteristic
Fig. 2 Typ. rated current vs. temperature
Fig. 3 Typ. transfer characteristic
Fig. 4 Reverse bias safe operating area
Fig. 5 Typ. Turn-on /-off energy = f (IC)
Fig. 6 Typ. Turn-on /-off energy = f (RG)
2
19-10-2004 SEN
© by SEMIKRON
SKiiP 25NAB065V10
Fig. 7 Typ. gate charge characteristic
Fig. 8 Typ. thermal impedance
Fig. 9 Typ. freewheeling diode forward characteristic
Fig. 10 Typ. input bridge forward characteristic
3
19-10-2004 SEN
© by SEMIKRON
SKiiP 25NAB065V10
#1 /
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-10-2004 SEN
© by SEMIKRON