SEMIKRON SKIM300GD063D

SKiM 300GD063D
Absolute Maximum Ratings
Symbol Conditions
IGBT
@
B 0"2
= )8 0.-2 >
= )8 0.-2 > = / SKiM 4
Units
#-)7- 0/5-2
75- 0+#-2
A ) 7- 666 C /8- 0/)82
(
(
>
>
)8--
)77 0/582
75- 0+#-2
(
(
)F--
(
( / 6
Inverse diode
IGBT Modules
D
D@ = @
= )8 0.-2 >
= )8 0.-2 > = / D@
= /- E 6E B = /8- >
= )8 > ! ,
Preliminary Data
Characteristics
Symbol Conditions
IGBT
Features
*
= E = 5 (
= -E = E
B = )8 >
B = )8 >
B = )8 02 >
= )-- (E = /8 H
= -E = )8 E = / @;<
= -E = )8 E = / @;<
= -E = )8 E = / @;<
9ICI
! = )8 0/)82 >
,02
,02
= +-- = +-- (
9
= 9
= 5 G
B = /)8 >
02
A /8 02
3; #E B = >
SKiM 300GD063D
Values
$6 " !
®
= )8> ! ,
! !" # $ % & ' (!)*+
, ,,
#-.)/++ 0,12 !
+3.4+) , #56/ 0!2
7-4/)848#
Typical Applications
9 /-- :;<
, "
! !, ):;<
02
min.
typ.
78
88
max.
#8
-+
- F 0- 52
) F 0+ F2
/ 8 0/ #2
Units
(
G
/.
)-
D
D
D
;
B = )8 0/)82 > !!
)+
)8
/8
/ 8 0/ #2
G
/+.8
.-8-
/# 8 0/7 82
J
J
= E = (
Inverse diode
D = *
99@
L
D = )-- (E = - E
B = )8 0/)82 >
B = )8 0/)82 >
B = )8 0/)82 >
D = +-- (E B = /)8 >
= - ,4, = +.-- (4M
9
= 9
= 5 G
/ )8 0/ )2
/7
0- 582
0/ #2
))8
+-
0- F2
0) .82
K
(
M
8
J
Thermal characteristics
90B2
-)
34N
90B2
DN%
- )58
34N
Temperature Sensor
9
= )8 0/--2 >
/ 0/ #.2
:G
!
= )8 0/--2 >
+ 0)2
O
Mechanical data
@/
@)
: 0@82
! 0@#2
)
7
+
8
+/-
"
GD
1
19-03-2004 SCT
© by SEMIKRON
SKiM 300GD063D
Fig. 1 Output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Turn-on /-off energy = f (IC)
Fig. 4 Turn-on /-off energy = f (RG)
Fig. 5 Transfer characteristic
Fig. 6 Gate charge characteristic
2
19-03-2004 SCT
© by SEMIKRON
SKiM 300GD063D
Fig. 7 Switching times vs. IC
Fig. 8 Switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance of IGBT
Fig. 10 Transient thermal impedance of FWD
Zth(j-s) = f (tp); D = tp/tc = tp * f
Zth(j-s) = f (tp); D = tp/tc = tp * f
Fig. 11 CAL diode forward characteristic, incl. RCC'+ EE'
Fig. 12 CAL diode peak reverse recovery current
3
19-03-2004 SCT
© by SEMIKRON
SKiM 300GD063D
Fig. 13 Typ. CAL diode recovered charge
Dimensions in mm
%
%
%
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
4
19-03-2004 SCT
© by SEMIKRON