SEMIKRON SKM100GB12T4

SKM 100GB12T4
27 8& $ /
Absolute Maximum Ratings
Symbol Conditions
IGBT
,
; 27 8
; 6>7 8
@+
6233
6'3
-
?3 8
627
-
A33
-
B 23
63
E
27 8
623
-
?3 8
G3
-
A33
-
773
-
233
-
93 :6>7
8
93 :627
8
333
,
SEMITRANS® 2
IGBT4 Modules
SKM 100GB12T4
'33 C < 67 C
, D 6233 ; 673 8
Inverse Diode
F
; 6>7 8
F@+
F@+ A ( F)*+
F,+
63 C ; 6>7 8
Module
@+,
Target Data
;
"
$
Features
!" #$%& $
$" ' ( )*+
, " " -.
// -.
Typical Applications
- /
01,
$ $/ 23
4!5
Remarks
$/ 6278 (& 93 :6738& / $ $ $/
;<6738
Units
27 8
@+ A ( )*+
Values
-& 6 27 8& $ /
Characteristics
Symbol Conditions
IGBT
& -
,
& ,
3
67 min.
typ.
max.
Units
7
7&?
'&7
; 27 8
3&?
3&G
; 673 8
3&>
3&?
; 278
63
66
H
; 6738
67
6'
H
6&?
2
2&2
2&
; 8
633 -& 67 ; 278$
; 6738$
27& 3 6 +!5
-
'&2
3&6
F
F
3&A7
F
I
9?J:67
7>3
@
; 27 8
>&7
K
66
L
66
L
/
/ @ @ @;9
'33
633; 673 8
3&2>
MJN
GB
1
11-07-2007 SCH
© by SEMIKRON
SKM 100GB12T4
Characteristics
Symbol Conditions
Inverse Diode
F F 633 -C 3 F3
F
®
SEMITRANS 2
IGBT4 Modules
@@+
I
F 633 -
<9?
@;9
//
Target Data
typ.
max.
Units
; 27 8$
2&2
2&7
; 673 8$
2&6
2&7
; 27 8
6&A
6&7
; 673 8
3&G
6&6
; 27 8
G
66
H
; 673 8
62
6A&7
H
; 673 8
E
>&7
L
3&?
F -C F3
F
@@+
I
F -
; 8$
; 8
; 8
; 8
E
L
//
Features
!" #$%& $
$" ' ( )*+
, " " -.
// -.
MJN
Freewheeling Diode
F SKM 100GB12T4
min.
MJN
Module
.
@O:O
23
& $9
A3
!
27 8
3&>7
H
627 8
6
H
3&37
MJN
@9
/$
+
4 +'
A
7
)
+
$ +7
2&7
7
)
6'3
"
Typical Applications
- /
01,
$ $/ 23
This is an electrostatic discharge sensitive device (ESDS), international standard
IEC 60747-1, Chapter IX.
Remarks
$/ This technical information specifies semiconductor devices but promises no
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
4!5
6278 (& 93 :6738& / $ $ $/
;<6738
GB
2
11-07-2007 SCH
© by SEMIKRON
SKM 100GB12T4
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
3
11-07-2007 SCH
© by SEMIKRON
SKM 100GB12T4
Fig. 9 Transient thermal impedance of IGBT and Diode
4
Fig. 10 CAL diode forward characteristic
11-07-2007 SCH
© by SEMIKRON
SKM 100GB12T4
UL recognized file
5
no. E 63 532
P'6
11-07-2007 SCH
© by SEMIKRON