SEMIKRON SKM200GAR125D

SKM 200GB125D
( 4 -5 6$ Absolute Maximum Ratings
Symbol Conditions
IGBT
7$3
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7
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SEMITRANS® 3
Ultra Fast IGBT Modules
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SKM 200GAL125D
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Features
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4 *. > B
Freewheeling Diode
SKM 200GAR125D
7$$ 4 .. 7> 7<3 ? -. 7>
Inverse Diode
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SKM 200GB125D
Units
(
4 -5 6$
$
(8 4 -5 6$
Values
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Typical Applications
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2
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3
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( 4 -5 6$ Characteristics
Symbol Conditions
IGBT
7<3),
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min.
typ.
max.
Units
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7
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2)8D,
GB
1
GAL
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LMN
GAR
04-05-2007 SEI
© by SEMIKRON
SKM 200GB125D
Characteristics
Symbol Conditions
Inverse Diode
7! 4 73$
!
4 *5. %> 7<3 4 . 7
7!.
min.
typ.
max.
Units
(8 4 -5 6$
#B
-
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7
(8 4 *-5 6$
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*:
(8 4 -5 6$
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7
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(8 4 *-5 6$
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7
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(8 4 *-5 6$
®
SEMITRANS 3
H
! 4 *5. %
M 4 55.. %MA
3
7<3 4 . 7> 7$$ 4 .. 7
2)8D,&
22;
Ultra Fast IGBT Modules
7
G
G
(8 4 *-5 6$
-+.
-C
%
A$
J
.-5
LMN
-5
7
Freewheeling Diode
7! 4 73$
SKM 200GB125D
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4 *5. %> 7<3 4 . 7
7!.
SKM 200GAL125D
(8 4 -5 6$
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7
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SKM 200GAR125D
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7
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(8 4 *-5 6$
H
! 4 *5. %
M 4 55.. %MA
3
7<3 4 . 7> 7$$ 4 .. 7
2)8D,!&
22;
Features
! " #
$% &$' &
$
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Typical Applications
/ -. 01
7
7
7
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Module
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This is an electrostatic discharge sensitive device (ESDS), international standard
2
#
*.. 01 IEC 60747-1, Chapter IX.
#
technical information specifies semiconductor devices but promises no
3
/ -. 01 This
characteristics. No warranty or guarantee expressed or implied is made regarding
delivery, performance or suitability.
GB
2
GAL
GAR
04-05-2007 SEI
© by SEMIKRON
SKM 200GB125D
Zth
Symbol
Zth(j-c)l
Conditions
Values
Units
2
2
2
2
4*
44+
4C
4*
44+
.
-+
5K
**
..FCC
...:F
...-
0MN
0MN
0MN
0MN
4C
...*5
SKM 200GAL125D
2
2
2
2
4*
44+
4C
4*
44+
*.
F
-.
+
..5+
...+C
..FF
0MN
0MN
0MN
0MN
SKM 200GAR125D
4C
....+
SEMITRANS® 3
Zth(j-c)D
Ultra Fast IGBT Modules
SKM 200GB125D
Features
! " #
$% &$' &
$
'
(
)*+ , )-. ,
Typical Applications
/ -. 01
2
#
*.. 01
#
3
/ -. 01
GB
3
GAL
GAR
04-05-2007 SEI
© by SEMIKRON
SKM 200GB125D
Fig. 1 Typ. output characteristic, inclusive RCC'+ EE'
Fig. 2 Rated current vs. temperature IC = f (TC)
Fig. 3 Typ. turn-on /-off energy = f (IC)
Fig. 4 Typ. turn-on /-off energy = f (RG)
Fig. 5 Typ. transfer characteristic
Fig. 6 Typ. gate charge characteristic
4
04-05-2007 SEI
© by SEMIKRON
SKM 200GB125D
Fig. 7 Typ. switching times vs. IC
Fig. 8 Typ. switching times vs. gate resistor RG
Fig. 9 Transient thermal impedance
Fig. 10 CAL diode forward characteristic
Fig. 11 Typ. CAL diode peak reverse recovery current
Fig. 12 Typ. CAL diode peak reverse recovery charge
5
04-05-2007 SEI
© by SEMIKRON
SKM 200GB125D
UL Recognized
File 63 532
$
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6
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& 5
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04-05-2007 SEI
<%2
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© by SEMIKRON