SKM 400GB12T4 -6 7& $ , Absolute Maximum Ratings Symbol Conditions IGBT 4 : -6 7 : 5=6 7 ?+ 5-.. '5. 1 >. 7 =6 1 5-.. 1 A -. ?+ @ ( )*+ IGBT4 Modules SKM 400GB12T4 B ; B 4 C Units -6 7 4 SEMITRANS® 3 Values : 7 D Inverse Diode E : 5=6 7 E?+ E?+ @ ( E)*+ E4+ 5. B -6 7 . 1 >. 7 @@. 1 5-.. 1 -5F. 1 6.. 1 8. 95=6 7 8. 95-6 7 ... : 5=6 7 Module ?+4 Target Data : " Features !" #$%& $ $" ' ( )*+ $ $, -. /!0 Typical Applications 1 , 234 $ $, -. /!0 Remarks $, 5-67 (& 8. 956.7& , $ $ $, :;56.7 $ 1& 5 -6 7& $ , Characteristics Symbol Conditions IGBT & 5' 1 4 . & 4 . 56 min. typ. max. Units 6 6&> '&6 : -6 7 .&> .&F : 56. 7 .&= .&> : -67 -&6 -&> G : 56.7 @&> G 5&> - -&- -& : -6 7 .. 1& 56 : -67$ : 56.7$ -6& . 5 +!0 H 8> I956 ? : -6 7 , , ? 5 G ? 5 G ?:8 '.. ..1 : 56. 7 8> 1 -&> 5&' E E 5& E --6. 5&F J K . K .&.=- LIM GB 1 21-08-2007 SCH © by SEMIKRON SKM 400GB12T4 Characteristics Symbol Conditions Inverse Diode E E .. 1B . E. E ® SEMITRANS 3 IGBT4 Modules ??+ H E .. 1 8> ?:8 ,, min. typ. max. Units : -6 7$ -&- -&6 : 56. 7$ -&5 -&6 : -6 7 5&@ 5&6 : 56. 7 .&F 5&5 : -6 7 -&-6 -&6 G : 56. 7 @ 5&@6 G : 56. 7 1 D @@ K .&5 LIM Freewheeling Diode SKM 400GB12T4 E E 1B E. E Target Data ??+ H E 1 : 7$ : 7 : 7 : 7 1 D K ,, Features Module ?O9O !" #$%& $ $" ' ( )*+ $ $, -. /!0 Typical Applications 1 , 234 $ $, -. /!0 Remarks $, 5-67 (& 8. 956.7& , $ $ $, :;56.7 LIM N 56 & $8 -. ! -6 7 .&@6 G 5-6 7 .&6 G .&.@> LIM ?8 ,$ + / +' @ 6 ) + $ +' -&6 6 ) @-6 " .&.- This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. GB 2 21-08-2007 SCH © by SEMIKRON SKM 400GB12T4 Fig. 1 Typ. output characteristic, inclusive RCC'+ EE' Fig. 2 Rated current vs. temperature IC = f (TC) Fig. 5 Typ. transfer characteristic Fig. 6 Typ. gate charge characteristic 3 21-08-2007 SCH © by SEMIKRON SKM 400GB12T4 Fig. 9 Transient thermal impedance of IGBT and Diode 4 Fig. 10 CAL diode forward characteristic 21-08-2007 SCH © by SEMIKRON SKM 400GB12T4 UL recognized file no. E 63 532 P6' 5 P6' 21-08-2007 SCH © by SEMIKRON